JANSL2N5152L [MICROSEMI]
Small Signal Bipolar Transistor,;
| 型号： | JANSL2N5152L |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总8页 (文件大小：773K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JANS 2N5152L and JANS 2N5154L
Qualified Levels:
RADIATION HARDENED
JANSM, JANSD,
JANSP, JANSL,
JANSR, JANSF
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DESCRIPTION
These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation
Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi
also offers numerous other products to meet higher and lower power voltage regulation
applications.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
•
JEDEC registered 2N5152 and 2N5154.
JANS RHA qualifications are available per MIL-PRF-19500/544.
TO-5 Package
Also available in:
TO-39 Package
(leaded)
APPLICATIONS / BENEFITS
JANS_2N5152 &
•
•
•
•
High frequency operation.
Lightweight.
JANS_2N5154
High-speed power-switching applications.
High-reliability applications.
U3 Package
(surface mount)
JANS_2N5152U3 &
JANS_2N5154U3
MAXIMUM RATINGS
Parameters/Test Conditions
Symbol
Value
Unit
ºC
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Reverse Pulse Energy (1)
TJ and TSTG
RӨJA
-65 to +200
175
10
15
2
ºC/W
ºC/W
mJ
A
RӨJC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Collector Current (dc)
IC
Collector to base voltage (static), emitter open
Collector to emitter voltage (static) base open
Emitter to base voltage (static) collector open
Steady-State Power Dissipation @ TA = +25 ºC
Steady-State Power Dissipation @ TC = +25 ºC
VCBO
VCEO
VEBO
PD
100
80
5.5
1
V
V
V
Fax: (978) 689-0803
W
PD
10
W
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load
energy test circuit.
Website:
www.microsemi.com
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 1 of 8
JANS 2N5152L and JANS 2N5154L
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap.
•
•
•
•
•
•
TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37).
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: NPN (see package outline).
WEIGHT: Approximately 1.14 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JANSM 2N5152
L
Reliability Level
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
Long-Leaded Package
JEDEC type number
(See Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Definition
Symbol
Common-base open-circuit output capacitance
Collector cutoff current, base open
Cobo
ICEO
ICEX
Collector cutoff current, circuit between base and emitter
Emitter cutoff current, collector open
IEBO
hFE
Common-emitter static forward current transfer ratio
Collector-emitter voltage, base open
VCEO
VCBO
VEBO
Collector-emitter voltage, emitter open
Emitter-base voltage, collector open
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 2 of 8
JANS 2N5152L and JANS 2N5154L
ELECTRICAL CHARACTERISTICS @ TA = +25 ºC unless otherwise noted.
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
IC = 100 mA, IB = 0
Symbol
Min.
Max.
Unit
V(BR)CEO
80
V
Emitter-Base Cutoff Current
VEB = 4.0 V, IC = 0
VEB = 5.5 V, IC = 0
1.0
1.0
µA
mA
IEBO
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 0
VCE = 100 V, VBE = 0
Collector-Emitter Cutoff Current
VCE = 40 V, IB = 0
1.0
1.0
µA
mA
ICES
ICEO
50
µA
ON CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 5 V
2N5152L
2N5154L
2N5152L
2N5154L
2N5152L
2N5154L
20
50
30
70
20
40
--
--
90
200
--
IC = 2.5 A, VCE = 5 V
IC = 5A, VCE = 5V
hFE
--
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
Base-Emitter Voltage Non-Saturation
IC = 2.5 A, VCE = 5 V
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA
0.75
1.5
VCE(sat)
VBE
V
V
V
1.45
1.45
2.2
VBE(sat)
IC = 5.0 A, IB = 500 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio 2N5152L
|hfe|
6
7
2N5154L
IC = 500 mA, VCE = 5 V, f = 10 MHz
Small-signal short Circuit Forward-Current
Transfer Ratio
IC = 100 mA, VCE = 5 V, f = 1 KHz
2N5152L
2N5154L
hfe
20
50
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
Cobo
250
pF
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 3 of 8
JANS 2N5152L and JANS 2N5154L
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
IC = 5 A, IB1 = 500 mA
Turn-Off Time
RL = 6Ω
ton
0.5
µs
toff
1.5
µs
Storage Time IB2 = -500 mA
tS
tf
1.4
0.5
µs
µs
Fall Time
VBE(OFF) = 3.7 V
SAFE OPERATING AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = +25 °C, tP = 1.0 s, 1 Cycle
Test 1
VCE = 5.0 V, IC = 2.0 A
Test 2
VCE = 32 V, IC = 310 mA
Test 3
VCE = 80 V, IC = 12.5 mA
dc Operation
TC < 25 ºC
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 4 of 8
JANS 2N5152L and JANS 2N5154L
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Emitter Cutoff Current
VCE = 40 V
ICEO
100
µA
Emitter to Base Cutoff Current
VEB = 4 V
IEBO
V(BR)CEO
ICES
2.0
µA
V
Breakdown Voltage, Collector to Emitter
IC = 100 mA
80
Collector to Emitter Cutoff Current
VCE = 60 V
2.0
2.0
µA
mA
Emitter to Base Cutoff Current
IEBO
VEB = 5.5 V
Forward-Current Transfer Ratio (1)
IC = 50 mA, VCE = 5 V
2N5152L
2N5154L
2N5152L
2N5154L
2N5152L
2N5154L
[10]
[25]
[15]
[35]
[10]
[20]
IC = 2.5 A, VCE = 5 V
90
[hFE]
200
IC = 5 A pulsed, VCE = 5 V
Base to Emitter voltage (non-saturated)
VCE = 5 V, IC = 2.5 A, pulsed
1.45
VBE
V
V
Collector-Emitter Saturation Voltage
IC = 2.5 mA, IB = 250 mA, pulsed
IC = 500 mA, IB = 500 mA, pulsed
VCE(sat)
0.86
1.73
Base-Emitter Saturation Voltage
VBE(sat)
V
1.67
2.53
IC = 2.5 A, IB = 250 mA, pulsed
IC = 5 A, IB = 500 mA, pulsed
(1) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value
can never exceed the pre-radiation minimum hFE that it is based upon.
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 5 of 8
JANS 2N5152L and JANS 2N5154L
GRAPHS
TC (°C) (Case)
FIGURE 1
Temperature-Power Derating Curve
TA (°C) (Ambient)
FIGURE 2
Temperature-Power Derating Curve
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 6 of 8
JANS 2N5152L and JANS 2N5154L
GRAPHS (continued)
Time (sec)
FIGURE 3
Thermal Impedance (RӨJA
)
Time (sec)
FIGURE 4
Thermal Impedance (RӨJC
)
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 7 of 8
JANS 2N5152L and JANS 2N5154L
PACKAGE DIMENSIONS
Dimensions
Millimeters
Symbol
Inch
Note
6
Min
.305
.240
.335
Max
Min
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
.335
.260
.370
7.75
6.10
8.51
.200 TP
5.08 TP
7
.016
.019
0.41
0.48
8,9
See note 14
LU
L1
.016
.019
.050
0.41
0.48
1.27
8,9
8,9
L2
P
.250
.100
6.35
2.54
8,9
7
Q
.030
.045
.034
.010
0.76
1.14
0.86
0.25
5
TL
TW
r
.029
.028
0.74
0.71
3,4
3
10
7
α
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in
and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. TO-5 dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.
T4-LDS-0100-1, Rev. 1 (120716)
©2012 Microsemi Corporation
Page 8 of 8
相关型号：
JANSL2N5153
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
MICROSEMI
JANSL2N5153L
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
MICROSEMI
JANSL2N6987
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14
MICROSEMI
JANSL2N6987U
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, LCC-20
MICROSEMI
JANSL2N7373
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254AA, 3 PIN
MICROSEMI
JANSM2N2221AL
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明