JANSP2N2221AL [MICROSEMI]
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN;
| 型号： | JANSP2N2221AL |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN 开关 晶体管 |
| 文件： | 总3页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
2N2221A
2N2222A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Value
50
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
75
Vdc
6.0
Vdc
Collector Current
800
mAdc
Total Power Dissipation @ TA = +25°C
TO-18 (TO-206AA)
2N2221A, 2N2222A
2N2221A, L
2N2222A, L
0.5
0.65
0.50
PT
W
2N2221AUA
2N2222AUA
2N2221AUB, UBC
2N2222AUB, UBC
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
4 PIN
Thermal Resistance, Junction-to-Ambient
2N2221AUA, 2N2222AUA
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
325
210
325
°C/W
RθJA
1. Derate linearly 3.08 mW/°C above TA > +37.5°C
2. Derate linearly 4.76 mW/°C above TA > +63.5°C
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
T4-LDS-0042 Rev. 2 (080857)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
50
Vdc
Collector-Base Cutoff Current
µAdc
ηAdc
VCB = 75Vdc
VCB = 60Vdc
10
10
ICBO
Emitter-Base Cutoff Current
µAdc
ηAdc
VEB = 6.0Vdc
VEB = 4.0Vdc
10
10
IEBO
Collector-Emitter Cutoff Current
VCE = 50Vdc
ICES
50
ηAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
30
50
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
35
75
150
325
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40
100
hFE
IC = 150mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40
100
120
300
IC = 500mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
20
30
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.3
1.0
VCE(sat)
Vdc
Vdc
Base-Emitter Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.6
1.2
2.0
VBE(sat)
T4-LDS-0042 Rev. 2 (080857)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
30
50
hfe
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
|hfe|
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
2.5
8.0
25
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
pF
pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
See figure 8 of MIL-PRF-19500/255
ton
35
ηs
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
toff
300
ηs
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
T4-LDS-0042 Rev. 2 (080857)
Page 3 of 3
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