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JANTV2N5666U3 [MICROSEMI]

Power Bipolar Transistor,;
JANTV2N5666U3
型号： JANTV2N5666U3
厂家： Microsemi    Microsemi
描述：

Power Bipolar Transistor,
文件： 总3页 (文件大小：113K)
中文：  中文翻译
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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/455  
DEVICES  
LEVELS  
2N5664  
2N5665  
2N5666  
2N5666S  
2N5666U3  
2N5667  
2N5667S  
JAN  
JANTX  
JANTV  
JANS  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
2N5664  
2N5666, S 2N5667, S  
2N5665  
Parameters / Test Conditions  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
VCEO  
VCBO  
VEBO  
IB  
200  
250  
300  
400  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
TO-66 (TO-213AA)  
2N5664, 2N5665  
6.0  
1.0  
5.0  
Collector Current  
IC  
2N5664 2N5666, S  
2N5665 2N5667, S  
2N5666U3  
Total  
Power Dissipation  
1/  
@ TA = +25°C  
@ TC = +100°C  
2.5  
30  
1.2  
15  
1.5  
35  
PT  
W
Operating & Storage Junction  
Temperature Range  
TO-5  
2N5666, 2N5667  
TJ, Tstg  
-65 to +200  
°C  
Note: 1) Consult 19500/455 for thermal derating curves.  
ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Voltage  
TO-39 (TO-205AD)  
2N5666S, 2N5667S  
IC = 10mAdc  
2N5664, 2N5666  
250  
400  
V(BR)CER  
V(BR)EBO  
ICES  
Vdc  
Vdc  
2N5665, 2N5667  
Emitter-Base Breakdown Voltage  
6.0  
IE = 10μAdc  
Collector-Emitter Cutoff Current  
VCE = 200Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
0.2  
0.2  
μAdc  
VCE = 300Vdc  
U-3  
2N5666U3  
Collector-Base Cutoff Current  
VCB = 200Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
0.1  
1.0  
μAdc  
V
CB = 250Vdc  
VCB = 300Vdc  
CB = 400Vdc  
mAdc  
ICBO  
0.1  
1.0  
μAdc  
mAdc  
V
T4-LDS-0062 Rev. 1 (081095)  
Page 1 of 3  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/455  
ELECTRICAL CHARACTERISTICS (con’t)  
Parameters / Test Conditions  
ON CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 0.5Adc, VCE = 2.0Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
40  
25  
IC = 1.0Adc, VCE = 5.0Vdc  
IC = 3.0Adc, VCE = 5.0Vdc  
IC = 5.0Adc, VCE = 5.0Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
40  
25  
120  
75  
hFE  
2N5664, 2N5666  
2N5665, 2N5667  
15  
10  
All Types  
5.0  
Collector-Emitter Saturation Voltage  
IC = 3.0Adc, IB = 0.3Adc  
2N5664, 2N5666  
2N5665, 2N5667  
All Types  
0.4  
0.4  
1.0  
VCE(sat)  
Vdc  
Vdc  
IC = 3.0Adc, IB = 0.6Adc  
IC = 5.0Adc, IB = 1.0Adc  
Base-Emitter Saturation Voltage  
IC = 3.0Adc, IB = 0.3Adc  
2N5664, 2N5666  
2N5665, 2N5667  
All Types  
1.2  
1.2  
1.5  
VBE(sat)  
IC = 3.0Adc, IB = 0.6Adc  
IC = 5.0Adc, IB = 1.0Adc  
DYNAMIC CHARACTERISTICS  
Forward Current Transfer Ratio  
|hfe|  
IC = 0.5Adc, VCE = 5.0Vdc, f = 10MHz  
2.0  
7.0  
Output Capacitance  
Cobo  
pF  
120  
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz  
SWITCHING CHARACTERISTICS  
Parameters / Test Conditions  
Turn-On Time  
Symbol  
Min.  
Max.  
Unit  
VCC = 100Vdc; IC = 1.0Adc; IB1 = 30mAdc  
ton  
0.25  
μs  
Turn-Off Time  
VCC = 100Vdc; IC = 1.0Adc; IB1 = -IB2 = 50mAdc  
2N5664, 2N5666  
2N5665, 2N5667  
1.5  
2.0  
toff  
μs  
T4-LDS-0062 Rev. 1 (081095)  
Page 2 of 3  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/455  
SAFE OPERATING AREA  
DC Tests  
TC = 100°C, 1 Cycle, t ≥ 1.0s, tr + tf = 10μs  
Test 1  
VCE = 6.0Vdc, IC = 5.0Adc  
2N5664 , 2N5665  
2N5666, 2N5667  
VCE = 3.0Vdc, IC = 5.0Adc  
Test 2  
V
CE = 32Vdc, IC = 0.75Adc  
2N5664  
2N5665  
2N5666  
2N5667  
VCE = 40Vdc, IC = 0.75Adc  
VCE = 29Vdc, IC = 0.4Adc  
VCE = 37.5Vdc, IC = 0.4Adc  
Test 3  
VCE = 200Vdc, IC = 29mAdc  
VCE = 200Vdc, IC = 19mAdc  
VCE = 300Vdc, IC = 21mAdc  
VCE = 300Vdc, IC = 14mAdc  
2N5664  
2N5666  
2N5665  
2N5667  
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%  
T4-LDS-0062 Rev. 1 (081095)  
Page 3 of 3  

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