JANTX1N5812 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN;
| 型号： | JANTX1N5812 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN |
| 文件： | 总1页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
FAST RECOVERY POWER RECTIFIER
Qualified per MIL-PRF-19500/ 478
Devices
Qualified Level
JAN
JANTX
JANTXV
1N5812
1N5812R
1N5814
1N5814R
1N5815
1N5815R
1N5816
1N5816R
MAXIMUM RATINGS
Ratings
1N5812 1N5814 1N5816
1N5812R 1N5814R 1N5816R
Symbol
Unit
Reverse Voltage
50
100
100
20
150
Vdc
Vpk
Adc
VR
VRWM
IO
Working Peak Reverse Voltage
50
150
Average Forward Current
Forward Current Surge Peak TC = +1000C
tp = 8.3 ms
TC = +1000C (1)
400
Adc
IFSM
Reverse Recovery Time
35
hs
0C
trr
TJ, T
Operating & Storage Junction Temperature
-65 to +175
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
DO-203AA
(DO-4)
Thermal Resistance, Junction-to-Case
1) Derate linearly 250 mA/0C from +1000C to +1500C, & 300 mA/0C above +1500C
1.5
R
qJC
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Zq
Min.
Max.
Unit
Thermal Impedance
0C/W
JX
IH ³ rated IO; tH £ 250ms; 10 mA £ IM £ 100 mA; tMD = 250 ms (max)
1.35
Forward Voltage
tp £ 8.3 ms, duty cycle £ 2.0% pulsed
IF = 10 A (pk)
IF = 20 A (pk)
VF1
VF2
Vdc
Vpk
0.860
0.950
Reverse Current
VR = Rated VR (See 1.3 of MIL-PRF-19500/478)
Breakdown Voltage
IR
mAdc
10
IR = 100 mAdc
IR = 100 mAdc
IR = 100 mAdc
1N5812, R
1N5814, R
1N5816, R
60
110
160
V(BR)
Vdc
Junction Capacitance
VR = 10 Vdc, VSIG = 50 mVdc (p-p) max, f = 1.0 MHz
Forward Recovery Voltage
CJ
VFR
trr
pF
V(pk)
hs
300
tp ³ 20 hs, tr = 8.0 hs; IF = 1,000 mA
2.2
15
Forward Recovery Time
IF = 1,000 mA
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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