JANTX1N6642UBCC [MICROSEMI]
Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3;
| 型号： | JANTX1N6642UBCC |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3 CD 二极管 |
| 文件： | 总26页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
MIL-PRF-19500/578M
24 June 2013
SUPERSEDING
MIL-PRF-19500/578L
19 October 2010
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 24 September 2013.
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643,
1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2,
1N6642UB2R, 1N6642UBCA, 1N6642UBD, 1N6642UBCC, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
The JANS1N4148-1 is no longer qualified and is superseded by JANS1N6642. See 6.4.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for switching diodes. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figures 1 (DO-35), 2 (U, US), 3 (UB), 4 (UB2), 5, and 6.
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
V
V
I
I
R
R
R
R
T
BR
RWM O(PCB)
FSM
t =
p
θJL
θJEC
θJA(PCB)
θJSP
STG
& T
L =
L = 0
(1)
(2)
(1) (3)
T =75°
J
A
Types
.375 inch
(9.53 mm)
(1) (2)
1/120 s
(1) (2)
V (pk) V (pk)
mA
300
300
300
300
A (pk)
2.5
°C/W
150
°C/W
40
°C/W
250
250
250
250
°C/W
°C
1N6638
150
150
100
100
125
125
75
-65 to +175
-65 to +175
-65 to +175
-65 to +175
1N6638U, 1N6638US
1N6642
2.5
2.5
150
150
1N6642U, 1N6642US
75
2.5
40
1N6642UB, 1N6642UB2,
1N6642UB2R, 1N6642UBCA,
1N6642UBD, 1N6642UBCC
100
75
300
2.5
325
100
-65 to +200
1N6643
75
75
50
50
300
300
2.5
2.5
250
250
-65 to +175
-65 to +175
1N6643U, 1N6643US
40
* (1) For temperature-current derating curves, see figures 7 and 8.
* (2) See figures 9, 10, 11, and 13 for thermal impedance curves. T = +75°C for both axial and Metal Electrode
A
Leadless Face diodes (MELF) (U, US) on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm)
1-layer 1-Oz Cu, horizontal, in still air; pads for U, US = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial
= .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L ≤ .187 inch
(≤ 4.75 mm); R
with a defined PCB thermal resistance condition included, is measured at I = 300 mA dc.
θJA
O
(3)
R
θJSP
refers to thermal resistance from junction to the solder pads of the UB package.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@.dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/578M
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA = +25°C.
V
I
V
I
I
I
I
t
t
C
F1
=
F2
R1
R2
R3
= 20 V
R4
fr
rr
= I
T1
= 0
V
V
V
V
=
I
=
V
R
I
=
R =
R =
R
R
RM
F
F
F
Types (1)
20 V
V
T
=
V
10 mA
10 mA
200mA
RWM
A
RWM
T
A
=
+150°C
+150°C
µA dc
100
V dc
0.8
V dc
nA dc
35
nA dc
500
ns
20
ns
pF
µA dc
1N6638, 1N6638U, 1N6638US
1.1 (2)
50
4.5
2.5
5.0
5.0
1N6642, 1N6642U, 1N6642US,
1N6642UB, 1N6642UB2,
1N6642UBCA, 1N6642UB2R,
1N6642UBD, 1N6642UBCC
0.8
0.8
1.2 (3)
1.2 (3)
25
50
500
500
50
75
100
100
20
20
5.0
6.0
1N6643, 1N6643U, 1N6643US
(1) Suffix "U" devices are structurally identical to the suffix "US" devices.
(2) I = 200 mA.
F
(3) I = 100 mA.
F
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
(Copies of these documents are available online at http://quicksearch.dla.mil or https://assist.dla.mil or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/578M
Dimensions
Millimeters
Symbol
Inches
Min
Notes
Max
.080
.180
.022
1.50
Min
Max
2.03
4.57
0.56
38.10
BD
BL
LD
LL
.056
.130
.018
1.00
1.42
3.30
2
3
0.46
25.40
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimension BD shall be measured at the largest diameter.
3. The specified lead diameter applies in the zone between .050 inch (1.27 mm) from the diode body to the
end of the lead. Outside of this zone lead shall not exceed BD.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
TYPES 1N6638, 1N6642, AND 1N6643.
FIGURE 1. Physical dimensions (DO-35).
3
MIL-PRF-19500/578M
US
Dimensions
Inches
Millimeters
Symbol
Min
.070
.165
.019
.003
Max
.085
.195
.028
Min
Max
2.16
4.95
0.71
BD
BL
1.78
4.19
0.48
0.08
ECT
S
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimensions are pre-solder dip.
3. U-suffix parts are structurally identical to the US-suffix parts.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
TYPES 1N6638U, 1N6642U, AND 1N6643U, 1N6638US, 1N6642US, AND 1N6643US
FIGURE 2. Physical dimensions of surface mount family.
4
MIL-PRF-19500/578M
UB
1N6642UBCA
1N6642UB
2
1
1N6642UBCC
1N6642UBD
Dimensions
Millimeters
Dimensions
Millimeters
Symbol
Inches
Symbol
Inches
Min
.035
.071
.016
Max
Min
.046
.115
.085
Min
1.17
2.92
2.16
Max
1.42
3.25
2.74
3.25
2.74
0.97
0.89
Max
.039
.079
.024
.008
.012
.022
Min
Max
0.99
2.01
0.61
0.20
0.31
0.56
BH
BL
BW
CL
CW
LL1
LL2
.056
.128
.108
.128
.108
.038
.035
LS1
LS2
LW
r
r1
r2
0.89
1.80
0.41
.022
.017
0.56
0.43
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Ceramic package only.
3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid.
4. Dimensions are pre-solder dip.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 3. Physical dimensions, surface mount (UB version).
5
MIL-PRF-19500/578M
UB2
1N6642UB2
1N6642UB2R
POLARITY
Dimensions
Dimensions
Inches Millimeters
Inches
Millimeters
Symbol
Symbol
Min
Max
Min
1.17
2.92
2.16
Max
Min
Max
.079
.024
Min
1.80
0.41
Max
2.01
0.61
BH
BL
.046
.115
.085
.056
.128
.108
.128
.108
.038
.035
1.42
3.25
2.74
3.25
2.74
0.96
0.89
LS
LW
r
.071
.016
BW
CL
.008 TYP
0.20 TYP
r1
r2
r3
r4
.012 TYP
.022 TYP
.008 TYP
.012 TYP
0.30 TYP
0.56 TYP
0.20 TYP
0.30 TYP
CW
LL1
LL2
.022
.017
0.56
0.43
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Ceramic package only.
3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid.
4. Dimensions are pre-solder dip.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 4. Physical dimensions, surface mount (2 pin UB version).
6
MIL-PRF-19500/578M
Dimensions
Ltr
Inches
Max
Millimeters
Min
.014
.005
.008
Min
Max
0.460
0.180
0.30
A
B
C
.018
.007
.012
0.360
0.120
0.20
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Element evaluation accomplished utilizing TO-5 package.
3. The physical characteristics of the die are:
Metallization:
Top (anode): Al
Back (cathode): Au
Al thickness: 25,000 Å minimum.
Gold thickness: 4,000 Å minimum.
Chip thickness: .010 inches (0.25 mm) ±.002 inches (0.05 mm).
FIGURE 5. Physical dimensions JANHCA and JANKCA die.
7
MIL-PRF-19500/578M
Dimensions
Ltr
Inches
Millimeters
Min
Max
.0170
.0061
.012
Min
Max
0.432
0.155
0.30
A
B
C
.0130
.0059
.008
0.330
0.150
0.20
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Element evaluation accomplished utilizing TO-5 package.
3. The physical characteristics of the die are:
Metallization:
Top (anode): Al
Back (cathode): Au
Al thickness: 25,000 Å minimum.
Gold thickness: 4,000 Å minimum.
Chip thickness: .010 inches (0.25 mm) ±.002 inches (0.05 mm).
* FIGURE 6. Physical dimensions, JANHCB and JANKCB die.
8
MIL-PRF-19500/578M
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500,
and on figure 1, figure 2, figure 3 (UB), figure 4 (UB2), figure 5(die), and figure 6 (die).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Diode construction. These devices shall be constructed in a manner and using materials which enable the
diodes to meet the applicable requirements of MIL-PRF-19500 and this document.
a. All devices except ‘UB’ and ‘UB2’ versions shall be of metallurgically bonded, thermally matched, non-cavity,
double-plug construction in accordance with the requirements of category I (see MIL-PRF-19500).
b. The ‘UB’ devices shall be eutectically mounted and wire bonded in a ceramic package.
c. The ‘U’ and 'US' version shall be structurally identical to the axial leaded versions except for end-cap lead
attachment.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturer’s identification and date code
shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The
polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX,
JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The part number may be reduced to
J6638, JX6638, JV6638, or JS6638. No color coding shall be permitted for part numbering.
3.7.1 Marking of U and US versions. ‘U’ and ‘US’ devices shall be marked with a cathode band as a minimum, or
a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. For
‘U’ and ‘US’ versions only, all marking may be omitted from the device except for the cathode marking. At the option
of the manufacturer, ‘U’ and ‘US’ devices may include laser marking on an end-cap, to include part number and lot
date code for all levels. JANS devices which are laser marked shall also include serialization. The prefixes JAN,
JANTX, JANTXV, or JANS may be abbreviated as J, JX, JV, or JS, respectively. (For example: The part number
may be reduced to JS6642). All marking which is omitted from the body of the device, except for polarity and serial
numbers, shall appear on the initial container.
3.7.2 UB devices. ‘UB’ and ‘UB2’ packages do not require polarity marking.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
9
MIL-PRF-19500/578M
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not require the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (JANS, JANTXV,and JANTX levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
(see table E-IV of
MIL-PRF-19500)
JANS level
JANTXV and JANTX level
Not required
2
Not required
3b
Not applicable
Not applicable
(1) 3c
Thermal impedance (see 4.3.3)
Thermal impedance (see 4.3.3)
4
5
6
9
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable for axial leaded parts
Not applicable
I
R1
Method 1038 of MIL-STD-750, condition A
Method 1038 of MIL-STD-750, condition A
10
11
12
V , I , and V
F2 R1
∆I ±15 nA dc or 100
BR R1
;
V
F2
and I
R1
percent of initial value whichever is greater.
Required, see 4.3.2
Required, see 4.3.2
Subgroups 2 and 3 of table I herein;
R1
15 nA dc, whichever is greater.
Subgroup 2 of table I herein;
∆I
≤ 100 percent of initial reading or
∆I
≤ 100 percent of initial reading or
R1
15 nA dc, whichever is greater.
∆V ≤ ±0.030 V dc (scope display, see 4.5.3).
13
∆V ≤ ±0.030 V dc
F2
F2
(scope display, see 4.5.3).
(1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be
repeated in screening requirements.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix
G of MIL-PRF-19500. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX
requirements.
10
MIL-PRF-19500/578M
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.1): Method 1038 of
MIL-STD-750, condition B. V = rated V
; f = 50 - 60 Hz; I (min) or I
= I
. T = 75°C maximum.
R
RWM
O
F(min)
O(PCB)
A
The maximum current density of small die shall be submitted to the qualifying activity for approval. With approval of
the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, and mounting
conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required.
In addition, the manufacturing site’s burn-in data and performance history will be essential criteria for burn-in
modification approval.
4.3.3 Thermal impedance measurements. The thermal impedance measurements shall be performed in
accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for
determining I and I
Measurement delay time (t ) = 70 µs max, t shall be 10 ms maximum. The thermal
MD
H
H
M.
impedance limit shall comply with the thermal impedance graphs in figures 9, 10, 11, 12, and 13 (less than or equal to
the curve value at the same t time) and shall be less than the process determined statistical maximum limit as
H
outlined in method 3101 or 4081 of MIL-STD-750, as applicable. See group E, subgroup 4 of table II herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500, table I herein, and as specified herein. Electrical measurements (end-points) shall be in accordance
with table I, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and
4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Read
and record the change in thermal impedance. The accept criteria is a maximum change of 10 percent for group B,
subgroups 3 and 4 for JANS, or group B, subgroup 2 for JANTX or JANTXV.
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
1056
1051
2101
1037
Conditions
B3
B3
B3
B4
0°C to +100°C, 25 cycles. (Not applicable for UB suffix parts.)
-55°C to +175°C, 100 cycles.
Decap analysis; scribe and break only. (Scribe and break not applicable for UB)
t
= t = 1 minute minimum; 2,000 cycles; I = 300 mA, pulsed; in lieu of ac
on off
O
conditions, a dc condition of I = 300 mA may be used.
F
B5
1027
I
= 300 mA minimum, V = rated V
, f = 50 - 60 Hz (see 4.5.1).
RWM
O
R
Option 1: Adjust I or T to obtain a minimum T of +225°C, t = 216 hours,
O
A
J
n = 45, c = 0.
Option 2: Adjust I or T to obtain a minimum T of +175°C, t = 1,000 hours,
O
A
J
n = 45, c = 0.
11
MIL-PRF-19500/578M
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Leaded samples from
the same lot may be used in lieu of U and US suffix sample for life test.
Subgroup Method
Conditions
B2
B2
B3
1056
1051
1027
0°C to + 100°C, 10 cycles. (Not applicable for UB suffix parts.)
-55°C to +175°C, 45 cycles including screening.
V
= rated V
; f = 50 - 60 Hz; I = 300 mA dc minimum; adjust T or I to obtain a
RWM
(pk)
minimum T of +150°C. (See 4.5.1.)
O
A
O
J
B4
B6
2101
1032
Decap analysis; scribe and break only. Not applicable for UB device types.
= +175°C.
T
A
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup Method Conditions
C2
C2
C2
C2
1056
1051
2036
2036
0°C to + 100°C, 10 cycles. (Not applicable for UB suffix parts.)
-55°C to + 175°C, 45 cycles including screening.
*
*
Axial devices - Tension: Condition A, 6 pounds, t = 15 s. Fatigue: Condition E for all types.
US devices - Tension: Condition A, 6 pounds, t = 15 s. Suitable fixtures may be used to pull
the end-caps in a manner which does not aid construction. Reference to axial lead may be
interpreted as end-cap with fixtures used for mounting. (Lead fatigue is not applicable to US
diodes).
C5
C6
4081
1026
L = .375 inch (9.53 mm); R
4.3.3).
= 150°C/W maximum; R = 40°C/W maximum (see
θJEC
θJL
1,000 hours minimum, V(
= rated V
; f = 50 - 60 Hz; I = 300 mA dc minimum; adjust
RWM O
pk)
or I to obtain a minimum T of +150°C. (See 4.5.1.)
T
A
O
J
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Free air power burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided
that each device under test still sees the full P (minimum) and that the minimum applied voltage, where applicable, is
t
maintained through-out the burn-in period. Method 3100 of MIL-STD-750 shall be used to measure T .
J
12
MIL-PRF-19500/578M
4.5.2 Forward-recovery voltage and time. Forward recovery time shall be measured as the time interval between
zero time and the point where the V pulse has decreased to 110 percent of the steady-state value of VF when
F
I
= 200 mA dc. The maximum rise time of the response detector shall be 1 ns. The maximum forward recovery
F
voltage (V ) during the forward recovery interval shall also be measured.
fr
4.5.3 Scope display evaluation. Scope display evaluation shall be stable in accordance with method 4023 of
MIL-STD-750. Scope display may be performed on automatic test equipment for screening only with the approval of
the qualifying activity. Scope display in table I herein shall be performed on an oscilloscope. Reverse current (I
)
BR
over the knee shall be 100 µA peak.
4.5.4 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of
MIL-STD-750.
13
MIL-PRF-19500/578M
TABLE I. Group A inspection.
MIL-STD-750
Conditions
Limits
Unit
Inspection 1/ 2/
Subgroup 1
Symbol
Method
2071
Min
Max
Visual and mechanical
examination
Subgroup 2
Thermal impedance
Forward voltage
3101
4011
See 4.3.3
Z
°C/W
θJX
I
= 10 mA dc pulsed (see 4.5.4)
V
F
F1
1N6638
1N6642
1N6643
.8
.8
.8
V dc
V dc
V dc
Forward voltage
4011
4021
V
F2
I
I
I
= 200 mA pulsed (see 4.5.4)
= 100 mA pulsed (see 4.5.4)
= 100 mA pulsed (see 4.5.4)
1N6638
1N6642
1N6643
1.1
1.2
1.2
V dc
V dc
V dc
F
F
F
Breakdown voltage
I
= 100 µA dc
R
1N6638
1N6642
1N6643
V
BR
150
100
75
V dc
V dc
V dc
Reverse current
4016
4016
DC method; V = 20 V dc
R
I
I
R1
1N6638
1N6642
1N6643
35
25
50
nA dc
nA dc
nA dc
Reverse current
1N6638
1N6642
DC method
R2
V
R
V
R
V
R
= 125 V dc
= 75 V dc
= 50 V dc
500
500
500
nA dc
nA dc
nA dc
1N6643
Subgroup 3
High temperature
operation
T
= +150°C
A
Reverse current
4016
DC method, V = 20 V dc
R
I
R3
1N6638
1N6642
1N6643
50
50
75
µA dc
µA dc
µA dc
See footnotes at end of table.
14
MIL-PRF-19500/578M
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Inspection 1/ 2/
Symbol
Unit
Method
4016
Conditions
Min
Max
Subgroup 3 - continued
Reverse current
1N6638
DC method
I
R4
V
R
V
R
V
R
= 125 V dc
100
100
100
µA dc
µA dc
µA dc
1N6642
= 75 V dc
= 50 V dc
1N6643
Forward voltage
4011
4011
I
= 10 mA dc pulsed (see 4.5.4)
V
V
F
F3
F4
1N6638
1N6642, 1N6643
.65
.80
V dc
V dc
Low temperature
operation
T
= -55°C
A
Forward voltage
1N6638
1N6642
1N6643
Pulsed
I
I
I
= 200 mA pulsed (see 4.5.4)
= 100 mA pulsed (see 4.5.4)
= 100 mA pulsed (see 4.5.4)
1.2
1.2
1.4
V dc
V dc
V dc
F
F
F
Subgroup 4
Capacitance
4001
4001
V
= 0 V dc; V
sig
= 50 mV(p-p)
C
C
R
T1
f = 1 MHz
1N6638
1N6642
1N6643
2.5
5.0
5.0
pF
pF
pF
Capacitance
V
R
= 1.5 V dc; V
= 50 mV(p-p)
sig
T2
f = 1 MHz
1N6638
1N6642
1N6643
2.0
2.8
2.8
pF
pF
pF
See footnotes at end of table.
15
MIL-PRF-19500/578M
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Inspection 1/ 2/
Symbol
Unit
Method
4031
Conditions
Min
Max
Subgroup 4 - continued
Reverse recovery time
Condition A, I = I = 10 mA dc
t
rr
F
R
1N6638
1N6642
1N6643
4.5
5.0
6.0
ns
ns
ns
Scope display
Subgroup 5
4023
4066
See method 4023 of MIL-STD-750,
figures 4023-3, -7, -9, -10 only
Not applicable
Subgroup 6
Surge current
I
= 2.5 A(pk) ten surges at one
FSM
per minute (max), surge duration of
1/120 seconds
Electrical
See table I, subgroup 2
measurements
Subgroup 7
Forward recovery
voltage and time
4026
I
= 200 mA dc (see 4.5.2)
V
5.0
20.0
V(pk)
ns
F
fr
t
fr
1/ For sampling plan, see MIL-PRF-19500.
2/ Electrical characteristics for surface mount versions are identical to the corresponding axial leaded versions
unless otherwise specified.
16
MIL-PRF-19500/578M
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
MIL-STD-750
Inspection 1/
Sample plan
n = 45, c = 0
Method
Conditions
Subgroup 1
Thermal shock (glass strain) 1/
1056
20 cycles, condition D except low temperature shall be
achieved using liquid nitrogen (-195°C). A visual
inspection for cracked glass shall be performed. (Not
applicable for UB suffix parts.)
Temperature cycling 1/
Hermetic seal
1051
1071
-65°C to +175°C.
Gross leak only.
Fine and gross for “UB” devices.
Electrical tests
See table I, subgroup 2.
Subgroup 2
n = 45, c = 0
Intermittent operation life
1037
4081
10,000 cycles; I = I = 300 mA dc, T = T
on
1 minute.
=
off
F
O
Electrical end-points
See table I, subgroup 2.
Subgroup 4
Thermal resistance
R
ΘJSP
can be calculated but shall be measured once
n = 15, c = 0
in the same package with a similar die size to confirm
calculations (may apply to multiple specification
sheets).
Thermal impedance curves
See MIL-PRF-19500, table E-IX, group E, subgroup 4.
Sample size
N/A
Subgroup 5
Not applicable
Subgroup 6
ESD
1020
1057
n = 11
n = 45
Subgroup 8
Resistance to glass cracking
Test condition B. Test until failure occurs or to a
maximum of 25 cycles, whichever comes first. Not
required for UB devices.
Subgroup 10
Potted environment test
1054
Not required for UB packages
n = 22, c = 0
1/ Separate samples may be used for each test.
17
MIL-PRF-19500/578M
TEMPERATURE – CURRENT DERATING CURVE
Axial and ‘US’ parts T = 25°C
A
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
200
Sinewave Operation 50% Duty Cycle
TA (°C) (Ambient)
R
= 250°C/W
θJA(PCB)
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate current for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperatures and current rating specified. (See 1.3.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤ 125°C, and 110°C to show current rating where most users want to limit T
J
J
in their application.
FIGURE 7. Temperature current derating.
18
MIL-PRF-19500/578M
TEMPERATURE – CURRENT DERATING CURVE
1N6642UB, UB2
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
200
225
Sinewave Operation 50% Duty Cycle
TA (°C) (Ambient)
Note: Max Finish-Alloy Temp = 175°C
R
= 325°C/W
θJA(PCB)
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect
J
the appropriate current for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperatures and current rating specified. (See 1.3.)
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤ 125°C, and 110°C to show current rating where most users want to limit T
J
J
in their application.
FIGURE 8. Temperature current derating.
19
MIL-PRF-19500/578M
Maximum Thermal Impedance Plots
Axial, ‘U’, ‘US’ parts, T = 55°C
A
1000
100
10
1
0.0001
0.001
0.01
0.1
Time (s)
1
10
100
1000
R
= 250°C/W
θJA(PCB)
NOTE: Z
= 25°C/W maximum at t = 10ms.
θJX
H
FIGURE 9. Thermal impedance - all glass devices.
20
MIL-PRF-19500/578M
Maximum Thermal Impedance Plots
pats°C
‘U’, ‘US’ r , T = 25
EC
100
10
1
0.0001
0.001
0.01
0.1
1
10
Time (s)
R
θJEC
= 40°C/W
NOTE: Z
= 25°C/W maximum at t = 10ms.
H
θJX
FIGURE 10. Thermal impedance - all U and US devices.
21
MIL-PRF-19500/578M
Maximum Thermal Impedance Plots
Axial parts, T = 25°C
L
1000
100
10
1
0.0001
0.001
0.01
0.1
Time (s)
1
10
100
R
θJL
= 150°C/W
NOTE: Z
= 25°C/W maximum at t = 10ms.
H
θJX
FIGURE 11. Thermal impedance (axial leads).
22
MIL-PRF-19500/578M
Maximum Thermal Impedance Plots
UB Package on FR-4 PCB, T = 25°C
A
1000
100
10
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
R
= 325°C/W
θJA(PCB)
NOTE: Z
= 65°C/W maximum at t = 10ms.
H
θJX
FIGURE 12. Thermal impedance (UB versions).
23
MIL-PRF-19500/578M
Maximum Thermal Impedance Plots
UB Package on FR-4 PCB, T
= 25°C
SP
1000
100
10
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
R
θJSP
= 100°C/W
NOTE: Z
= 65°C/W maximum at t = 10ms.
H
θJX
FIGURE 13. Thermal impedance (UB versions).
24
MIL-PRF-19500/578M
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online
listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil .
6.4 Cross reference substitution list. JANS1N4148-1 design is unsuitable for space flight applications and is
therefore prohibited and will no longer be built nor qualified. Devices in stock are acceptable provided the date code
does not exceed 9208. A PIN for PIN replacement table follows, and these devices are directly interchangeable. The
JANS1N6642 will be used in place of the JANS1N4148-1. The 1N6638US, 1N6642US, and 1N6643US are
structurally identical, are the preferred part numbers, and are directly substitutable for the 1N6638U, 1N6642U, and
1N6643U. The 1N6638U, 1N6642U, and 1N6643U shall not be used for new design.
Non-preferred PIN
Preferred PIN
JANS1N4148-1
JANS1N4148UR-1
JANS1N6638U
JANS1N6642U
JANS1N6643U
JANS1N6642
JANS1N6642US
JANS1N6638US
JANS1N6642US
JANS1N6643US
25
MIL-PRF-19500/578M
* 6.5 Suppliers of die. The qualified die suppliers with the applicable letter version (e.g., JANHCB1N6638) will be
identified on the QML.
JANHC and JANKC ordering information
Manufacturer
PIN
52GC4
43611
1N6638
1N6642
1N6643
JANHCA1N6638, 6642, and 6643
JANKCA1N6638, 6642, and 6643
JANHCB1N6638, 6642, and 6643
JANKCB1N6638, 6642, and 6643
*
6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2013-062)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 71, 99
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil .
26
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