JANTX1N6664 [MICROSEMI]
Rectifier Diode, 1A, 100V V(RRM),;
| 型号： | JANTX1N6664 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1A, 100V V(RRM), |
| 文件： | 总12页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
* METRIC
The documentation and process conversion measures
necessary to comply shall with this document shall be completed
by 3 March 2011.
MIL-PRF-19500/594B
3 December 2010
SUPERSEDING
MIL-PRF-19500/594A
3 July 1998
*
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND
1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery power rectifier
diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-257AA).
1.3 Maximum ratings (for each leg).
Types
VR
IO (1)
IFSM
trr
TSTG
and
VRWM
TC = +100°C
TC = +100°C
tp = 8.3 ms
and
TOP
V dc
100
150
200
A dc
10
A dc
50
ns
35
35
35
1N6664,
+200°C
to
-65°C
1N6664R
1N6665,
1N6665R
1N6666,
1N6666R
10
50
10
50
(1) Derate linearly, 100 mA/°C from +100°C to +200°C.
Storage temperature: TSTG = -65°C to +200°C.
Operating temperature: TJ = -65°C to +200°C.
Barometric pressure reduced (altitude operation): 8 mm Hg.
RθJC = 2.5°C/W maximum.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/594B
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch or
https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
* 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 herein. Methods used for electrical isolation of the terminal feedthroughs shall
employ materials that contain a minimum of 90 percent AL2O3 (ceramic).
* 3.4.1 Lead finish. Lead finish shall be solderable in accordance in MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3 and table I herein.
* 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.
* 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
2
MIL-PRF-19500/594B
Dimensions
Millimeters
Min Max
Ltr
Inches
Min
.410
.190
.025
.505
Max
.430
.200
.035
.595
BL
CH
10.41
4.83
10.92
5.08
LD
0.64
0.89
LL
12.82
15.11
LO
3.05 BSC
2.54 BSC
3.56
.120 BSC
.100 BSC
.140
LS
MHD
MHO
TL
3.81
13.64
16.89
1.14
.150
.537
.665
.045
.420
13.39
16.38
0.89
.527
.6450
.035
TT
TW
10.41
10.67
.410
Term 1
Term 2
Term 3
See schematic
See schematic
See schematic
NOTES:
1. Dimensions are in millimeters.
2. Inch equivalents are given for general information only.
3. Glass meniscus included in dimension TL and BL.
*
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Dimensions and configuration (TO-257AA).
3
MIL-PRF-19500/594B
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.2.1 Construction verification. Cross sectional photos from three devices shall be submitted in the qualification
report.
* 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
of MIL-PRF-19500)
Measurement
JANS level
Thermal impedance (see 4.3.2)
Y1 at 10,000 G
JANTX and JANTXV levels
(1) 3c
Thermal impedance (see 4.3.2)
Not applicable
4
9
Not applicable
Not applicable
11
Subgroup 2 of table I herein;
VF2 and IR1
Subgroup 2 of table I herein;
VF2 and IR1
12
13
See 4.3.1, method 1038 of MIL-STD-750,
test condition A, t = 96 hours
See 4.3.1, method 1038 of MIL-STD-750,
test condition A, t = 48 hours
Subgroups 2 and 3 of table I herein;
∆VF2 = ± .05 V (pk);
Subgroup 2 of table I herein;
∆VF2 = ± .05 V (pk);
∆IR1 = 150 nA dc or 100 percent of the
initial value, whichever is greater
∆IR1 = 150 nA dc or 100 percent of the
initial value, whichever is greater
(1) Thermal impedance shall be performed any time after sealing provided. Temperature cycling is performed
in accordance with MIL-PRF-19500, screen 3 prior to this thermal impedance.
4
MIL-PRF-19500/594B
4.3.1 Burn-in conditions. Burn-in conditions are as follows: TA = +150°C; VR = 0.8 to 0.85 rated VR dc (see 1.3).
* 4.3.2 Thermal impedance ZθJX measurements for screening. The thermal impedance measurements shall be
performed in accordance with method 3101 of MIL-STD 750 as applicable, using the guidelines in that method for
determining IM, IH, tH, and K factor where appropriate). Measurement delay time (tMD) = 70 µs max. The thermal
impedance limit used in screen 3c and table I, subgroup 2 shall be set statistically by the supplier.
4.3.2.1 Thermal impedance (ZθJX measurements) for initial qualification or requalification. The Zθ
JX
measurements shall be performed in accordance with method 3101 of MIL-STD-750, (read and record date ZθJX).
ZθJX shall be supplied on one lot (500 pieces minimum and a thermal response curve shall be submitted. Twenty-two
of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of parts.
Measurements conditions shall be in accordance with 4.4.1.
4.3.3 Surge current. Surge current, see method 4066 of MIL-STD-750. IFSM = 50 A; 6 surges; tp = 8.3 ms or
rectangular pulse of equivalent Irms; 3 surges. IO = 0 A; VRMS = 0 V; duty factor 1 percent minimum TA = +25°C.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table
I herein. The following test conditions shall be used for ZθJX, group A inspection: Zθ ≤ 2.5°C/W.
JX
a. IH = 5 A minimum.
b. tH ≥ 100 ms.
c. IM = 10 mA to 200 mA.
d. tMD = 200 µs maximum.
*
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIa (JANS) and table E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Electrical
measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III
herein.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
Method
4066
Conditions
TC = +100°C; tp ≤ 8.3 ms; VR = rated VR (see 1.3); six 8.3 ms surges; 1
surge/minute maximum. IF (surge) = 50 A dc; IO = 10 A dc.
B3
B4
B5
2037
1037
1027
Test condition D, all internal wires for each device shall be pulled separately.
2,000 cycles, 25 percent rated IO ≤ IO applied ≤ rated IO (see 4.5.2).
IF ≥ 0.5 A dc at TA = +25°C, for 96 hours, or adjusted as required by the chosen
TA to give an average lot at TJ = +275°C.
B6
3101
See 4.4.1 except tH ≥ 500 ms.
5
MIL-PRF-19500/594B
4.4.2.2 Group B inspection, table E-VIb (JANTX and JANTXV of MIL-PRF-19500).
Subgroup
B2
Method
4066
Conditions
TC = +100°C; tp ≤ 8.3 ms; VR = rated VR (see 1.3); six 8.3 ms surges; 1
surge/minute maximum. IF (surge) = 50 A dc; IO = 10 A dc.
B3
B4
B5
1037
IF ≥ 0.5 A dc, IO (see 4.5.2); 2,000 cycles.
Not applicable.
3101
See 4.4.1 except tH ≥ 500 ms.
*
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements
shall be in accordance with the applicable steps of table III herein.
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup
Method
2036
Conditions
C2
C2
C6
Test condition A, weight = 10 pounds, t = 15 seconds.
Omit initial conditioning.
1021
1037
IF ≥ 0.5 A dc, IO (see 4.5.2); 6,000 cycles.
*
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements shall
be in accordance with the applicable steps and footnotes of table III herein, except ZθJX is not required.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 DC intermittent operation life. A cycle shall consist of an "on" period, when forward current is applied
suddenly, not gradually, to the device for the time necessary to achieve an increase (delta) case temperature of
+85°C +15°C, -5°C followed by an "off" period, when the current is suddenly removed for cooling the case through a
similar delta temperature. Auxiliary (forced) cooling is permitted during the "off" period only. Either forward current or
"on" time, within specific limits, and "off" time may be adjusted to achieve the delta case temperature. Heat sinks
shall only be used if, and to the degree necessary, to maintain test samples with the desired delta temperature
tolerance. The heating time shall be such that 30 s ≤ theating ≤ 180 s. The forward current may be steady-state dc,
full-wave rectified dc, or the equivalent half-sine wave dc of the specified value. The test duration shall be the
specified number of cycles. Within the time interval of 50 cycles before, and 500 cycles after, the termination of the
test, the sample units shall be removed from the specified test conditions and allowed to reach room ambient
conditions. Specified end-point measurements for qualification and quality conformance inspections shall be
completed within 96 hours after removal of sample units from the specified test conditions. Additional readings may
be taken at the discretion of the manufacturer.
6
MIL-PRF-19500/594B
* TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
2071
Min
Max
Visual and
mechanical
examination
Subgroup 2
Thermal impedance
Forward voltage
3101
4011
See 4.4.1
2.5
Zθ
JX
°C/W
tp ≤ 400 µs, duty cycle ≤ 2 percent
pulse
VF1
VF2
1.0
1.5
V dc
V dc
IF = 6 A
IF = 12 A
Reverse current
leakage
4016
4021
DC method; VR = rated VR
(see 1.3)
IR1
250
nA dc
Breakdown voltage
V(BR)1
IR = 1.0 µA dc
1N6664, 1N6664R
1N6665, 1N6665R
1N6666, 1N6666R
100
150
200
V dc
V dc
V dc
Subgroup 3
High temperature
operation:
TA = +150°C
Reverse current
leakage
4016
4011
DC method; VR = rated VR
(see 1.3)
IR2
75
µA dc
Forward voltage
VF3
0.95
V
| IFM = 6 A, duty cycle ≤ 2 percent
(pulsed); tp ≤ 400 µs
Low temperature
operation:
TA = -55°C
Forward voltage
4011
4021
VF4
1.1
V
IFM = 6 A, duty cycle ≤ 2 percent
(pulsed); tp ≤ 400 µs
Breakdown voltage
V(BR)2
IR = 1.0 µA dc
1N6664,1N6664R
1N6665,1N6665R
1N6666,1N6666R
100
150
200
V dc
V dc
V dc
See footnote at end of table.
7
MIL-PRF-19500/594B
TABLE I. Group A inspection - Continued.
Inspection 1/
Subgroup 4
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
Min
Max
Reverse recovery
time
4031
4001
IF = 0.5 A; IR = 1 A; I(REC) = 0.25
A; di/dt = 85 A/µs minimum
trr
35
ns
Junction capacitance
VR = 10 V; f = 1 MHz; VSIG = 50
mV (p-p) maximum
CJ
100
pF
Subgroup 5
Not applicable
Subgroup 6
Surge current
4066
50
A
1/ For sampling plan, see MIL-PRF-19500.
8
MIL-PRF-19500/594B
* TABLE II. Group E inspection (all quality levels) for qualification only.
MIL-STD-750
Inspection
Sampling plan
Method
Conditions
Subgroup 1
45 devices
c = 0
Thermal shock
(liquid to liquid)
1056
20 cycles, except high temperature shall be 100°C and low
temperature shall be 0°C.
Temperature
cycling (air to air)
1051
1071
500 cycles, condition C. -65°C to +200°C.
Hermetic seal
Electrical
measurement
See table I, group A, subgroup 2 and table III,
steps 1 and 2.
Subgroup 2
22 devices
c = 0
Steady-state
reverse bias
1038
Test condition A, t = 1,000 hours, TC = +150°C,
VR = 0.8 of rated VRWM (see 1.3).
Electrical
measurement
See table I, group A, subgroup 2 and table III, steps 1 and
2.
Subgroup 3
Not applicable
Subgroup 4
Sample size
N/A
Thermal
impedance
curves
See MIL-PRF-19500.
See footnotes at end of table
9
MIL-PRF-19500/594B
* TABLE III. Group B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/
Step
1.
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
4011
Forward voltage
Duty cycle ≤ 2 percent
(pulsed see 4.5.1); tp =
8.3 ms (max)
1N6664,R,
1N6665, R,
1N6666, R
IF = 6 A
∆VF1
∆VF2
∆IR1
±50 mV dc change
from initial value
1N6664, R,
1N6665, R,
1N6666, R
IF = 12 A
±50 mV dc change
from initial value
2.
Reverse current
4016
DC method
1N6664, R,
1N6665, R,
1N6666, R
VR = 100 V dc
VR = 150 V dc
VR = 200 V dc
100 percent or ±150
nA dc change from
initial reading,
whichever is greater
1/ Devices which exceed the table I limits for this test shall not be accepted.
2/ The electrical measurements for group B inspections in table E-VIa (JANS) of MIL-PRF-19500 are as follows:
Subgroups 4 and 5, see table III herein, steps 1 and 2.
3/ The electrical measurements for group B inspections in table E-VIb (JAN, JANTX, and JANTXV) of
MIL-PRF-19500 are as follows: Subgroup 3, see table III herein, steps 1 and 2.
4/ The electrical measurements for group C inspections in table E-VII (all quality levels) of MIL-PRF-19500 are as
follows: Subgroup 6, see table III herein, steps 1 and 2.
5/ The electrical measurements for group E inspections in table E-IX of MIL-PRF-19500 are as follows:
Subgroups 1 and 2, see table III herein, steps 1 and 2.
10
MIL-PRF-19500/594B
5. PACKAGING
* 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
* 6. NOTES
* (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification).
* 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistics support of existing equipment.
* 6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online
listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.daps.dla.mil.
6.4 Interchangeability information. MIL-PRF-19500/594 is a TO-257 package version of MIL-PRF-19500/477,
which is an axial leaded diode version.
* 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of marginal notations and relationship to the
last previous issue.
11
MIL-PRF-19500/594B
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA – NA
DLA-CC
Preparing activity:
DLA - CC
(Project 5961-2010-075)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.daps.dla.mil.
12
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