JANTX2N2604 [MICROSEMI]
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN;
| 型号： | JANTX2N2604 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN 放大器 晶体管 |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/ 354
Devices
Qualified Level
JAN, JANTX
JANTXV
2N2604
2N2605
MAXIMUM RATINGS
Ratings
Symbol 2N2604 2N2605 Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
80
70
Vdc
VCBO
60
6.0
30
Vdc
VCEO
VEBO
IC
Vdc
mAdc
mW/0C
0C
Total Power Dissipation
@ TA = +250C(1)
400
PT
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/mW
TO-46*
(TO-206AB)
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.28 mW/0C above TA = +250C
0.437
R
qJC
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
80
70
Vdc
IC = 10 mAdc
2N2604
2N2605
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Emitter-Base Breakdown Current
IE = 10 mAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
60
Vdc
Vdc
V(BR)CEO
V(BR)EBO
ICBO
6.0
hAdc
hAdc
hAdc
10
2.0
IEBO
Collector-Emitter Cutoff Current
VCE = 50 Vdc
10
ICES
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N2604, 2N2605 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 5.0 Vdc
2N2604
2N2605
2N2604
2N2605
2N2604
2N2605
40
100
60
150
40
120
300
180
450
160
400
IC = 500 mAdc, VCE = 5.0 Vdc
hFE
IC = 10 mAdc, VCE = 5.0 Vdc
100
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 mAdc
0.3
0.9
Vdc
Vdc
VCE(sat)
VBE(sat)
0.7
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz
kW
1.0
2.0
10
20
2N2604
2N2605
hie
hoe
hfe
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
mmhos
40
60
2N2604
2N2605
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f= 1.0 kHz 2N2604
2N2605
60
150
180
450
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 0.5 mAdc, VCE = 5.0 Vdc, f = 30 MHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Noise Figure
1.0
8.0
6.0
½hfe½
pF
Cobo
VCE = 5.0 Vdc, IC = 10 mAdc, Rg = 10 kW, f = 100 Hz
VCE = 5.0 Vdc, IC = 10 mAdc, Rg = 10 kW, f = 1.0 kHz
VCE = 5.0 Vdc, IC = 10 mAdc, Rg = 10 kW, f = 10 kHz
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
F1
F2
F3
5.0
3.0
3.0
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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