JANTX2N2920L_技术文档

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 12 June 2013.

INCH-POUND

MIL-PRF-19500/355R

12 March 2013

SUPERSEDING

MIL-PRF-19500/355P

9 December 2011

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,

TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,

JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR,

JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH,

JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN

silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified

in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators “M”, “D”, “P“, “L”,

“R”, “F”, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.

1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and

JANKCA die), and figure 4 (JANHCB and JANKCB die).

1.3 Maximum ratings. Unless otherwise specified, T_C=+25°C.

Type

I

V

EBO

C

CBO

CEO

mA dc

30

V dc

70

V dc

60

V dc

6

All types

P (1)

P (2)

R

θJA

R

θJC

T

T_Jand T_STG

T

= +25°C

T

= +25°C

C

A

One

section

Both

sections

One

section

Both

sections

One

section

Both

sections

One

section

Both

sections

mW

200

mW

°C/W

°C

350

300

450

875

500

583

388

-65 to +200

(1) For T_A> +25°C, derate linearly 1.143 mW/°C, one section; 2.000 mW/°C, both sections.

(2) For T_C> +25°C, derate linearly 1.714 mW/°C, one section; 2.571 mW/°C, both sections.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:

VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST Online

database at https://assist.dla.mil .

AMSC N/A

FSC 5961

MIL-PRF-19500/355R

1.4 Primary electrical characteristics of each individual section. Unless otherwise specified, T_C=+25°C.

h_FE1

|h_fe|

V_CE(SAT)

V_CE= 5 V dc

I_C= 10 µA dc

V_CE= 5 V dc

I_C= 0.5 mA dc

f = 20 MHz

I_C= 1 mA dc

I_B= 100 µA dc

2N2919 2N2919L

2N2920 2N2920L

2N2920U

2N2919U

V dc

0.3

Min

Max

60

240

175

600

3.0

20

*

1.5 Primary electrical matching characteristics of each individual section. Unless otherwise specified, T_C=+25°C.

|V_BE1- V_BE2

|

1

|∆(V_BE1- V_{BE2 ∆TA}

)

|

|∆(V_BE1- V_BE2)_∆TA|

2

h_{FE 2−1}

h_{FE 2−2}

1

V_CE= 5 V dc

I_C= 100 µA dc

I_C= 10 µA dc

I_C= 100 µA dc

T_A= +25°C and -55°C

I_C= 100 µA dc

T_A= +125°C and +25°C

(1)

mV dc

5

mV dc

0.8

mV dc

1.0

Min

Max

0.9

1.1

*

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

(Copies of these documents are available online at https://assist.dla.mil/quicksearch or https://assist.dla.mil or

-

Semiconductor Devices, General Specification for.

-

*

from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

2

MIL-PRF-19500/355R

Dimensions

Inches Millimeters

Notes

Symbol

Min

Max

.370

.335

.260

.041

.160

Min

8.51

7.75

3.56

0.23

3.56

Max

9.40

8.51

6.60

1.04

4.06

CD

CD₁

CH

HT

LC

LC₁

LD

LL

LU

L₁

.335

.305

.140

.009

.140

.200 TP

5.08 TP

9

10

.016

.021

.041

0.53

See notes 10, 11, and 12

.019

.050

0.41

0.48

1.27

10

8

L₂

P

.250

.100

6.35

2.54

Q

.050

.045

.034

.010

1.27

1.14

0.86

0.25

7

5, 6

4, 5

TL

TW

r

.029

.028

0.74

0.71

9

α

45°TP

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Tab shown omitted.

4. Lead numbers 4 and 8 are omitted on this variation.

5. Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm).

6. TL shall be measured from maximum CD.

7. Details of outline in this zone are optional.

8. CD₁shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic

handling.

9. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch

(0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at

MMC. The device may be measured by direct methods or by the gauge and gauging procedures

described on gauge drawing GS-1.

10. LU applies between L₁and L₂. LD applies between L₂and LL minimum. Diameter is uncontrolled in

L₁and beyond LL minimum.

11. For transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05

mm) maximum.

12. For transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45

mm) maximum.

13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78).

3

MIL-PRF-19500/355R

Dimensions

Millimeters

Min Max

Symbol

Inches

Min Max

BL

.240

.250

.175

.080

.039

.070

.098

.105

.055

.028

6.10

6.35

4.44

2.03

0.99

1.78

2.49

2.67

1.39

0.71

BL₂

BW

BW₂

CH

LH

LL₁

LL₂

LS₁

LS₂

LW

.165

4.19

.044

.026

.060

.082

.095

.045

.022

1.12

0.66

1.52

2.08

2.41

1.14

0.56

Pin no.

Transistor

1

2

3

4

5

6

Collector no. 1

Base no. 1

Base no. 2

Collector no. 2

Emitter no. 2

Emitter no. 1

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions (2N2919U and 2N2920U) surface mount.

4

MIL-PRF-19500/355R

NOTES:

1. Chip size................................................. .015 x .019 inch ±.001 inch (0.381 x 0.4826 mm ±0.0254 mm).

2. Chip thickness........................................ .010 ±.0015 inch (0.254 ±0.0381 mm).

3. Top metal ............................................... Aluminum 15,000Å minimum, 18,000Å nominal.

4. Back metal.............................................. A. Gold 2,500Å minimum, 3,000Å nominal.

B. Eutectic Mount - No Gold.

5. Backside................................................. Collector.

6. Bonding pad ........................................... B = .003 inch (0.0762 mm), E = .004 inch (0.1016 mm) diameter.

7. Passivation............................................. Si₃N₄(Silicon Nitride) 2 kÅ min, 2.2 kÅ nom.

FIGURE 3. Physical dimensions (JANHCA and JANKCA die).

5

MIL-PRF-19500/355R

B

E

NOTES:

1. Die size---------

.018 x .018 inch (0.457 mm x 0.457 mm).

.008 ±.0016 inch (0.203 mm ±0.04 mm).

.0025 inch diameter (0.06 mm).

.003 inch diameter (0.076 mm).

Gold, 6,500 ±1,950Å.

Aluminum, 19,500 ±2,500Å.

Collector.

SiO₂, 7,500 ±1,500Å.

2. Die thickness---

3. Base pad--------

4. Emitter pad-----

5. Back metal-----

6. Top metal------

7. Back side------

8. Glassivation---

FIGURE 4. Physical dimensions (JANHCB and JANKCB) B version die.

6

MIL-PRF-19500/355R

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

h_FE-1/h_FE-2.............................................Static forward-current-gain-ratio. The matching ratio of the static forward-

current transfer ratio of each section.

R_θ_JA.....................................................Thermal resistance junction to ambient.

R_θ_JSP(IS)................................................Thermal resistance junction to solder pads (infinite sink mount to PCB).

|V_BE1- V_BE2|........................................Absolute value of base-emitter-voltage differential between the individual

sections.

|∆V_BE1-2(T1) - ∆V_BE1-2(T2)| ................Absolute value of the algebraic difference between the base-emitter-

voltage differentials between the individual sections at two different

temperatures.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1, 2, 3, and 4. No lead (Pb) shall be used in the construction of the die bonds.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and

test levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, 1.5, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P,

L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of

abbreviation required).

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I, II, and III).

7

MIL-PRF-19500/355R

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.2.1.1 Group E thermal response. With extremely small junction devices such as this one, a true thermal

impedance cannot be measure, only calculated. While “thermal response” has been substituted for “thermal

impedance” herein, the terms, units and procedure are essentially unchanged. Each supplier shall submit a thermal

response (Z_θJX) histogram of the entire qualification lot. The histogram data shall be taken prior to the removal of

devices that are atypical for thermal response. Thermal response curves (from Z_θJXtest pulse time to R_θJXminimum

steady-state time) of the best device in the qual lot and the worst device in the qual lot (that meets the supplier

proposed screening limit), or from the thermal grouping, shall be submitted. The optimal test conditions and

proposed initial thermal response screening limit shall be provided in the qualification report. Data indicating how the

optimal test conditions were derived for Z_θJXshall also be submitted. The proposed maximum thermal response Z_θJX

screening limit shall be submitted. The qualifying activity may approve a different Z_θJXlimit for conformance

inspection end-point measurements as applicable. Equivalent data, procedures, or statistical process control plans

may be used for part, or all, of the above requirements. The approved thermal response conditions and limit for Z_θJX

shall be used by the supplier in screening and table I, subgroup 2. The approved thermal resistance conditions for

R_θJXshall be used by the supplier for conformance inspection. For product families with similar thermal

characteristics based on the same physical and thermal die, package, and construction combination (thermal

grouping), the supplier may use the same thermal response curves.

4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500.

8

MIL-PRF-19500/355R

4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

of MIL-PRF-19500)

Measurement

JANS level

JANTX and JANTXV levels

(1) 3c

9

Thermal response, method 3131 of

MIL-STD-750

Thermal response, method 3131 of

MIL-STD-750

h_{FE 2−1}

I_CBO2, h_FE3

,

Not applicable

h_{FE 2−2}

10

11

48 hours minimum

h_{FE 2−1}

I

_CBO2, h_FE3

,

I_CBO2, h_FE3,

h_{FE 2−2}

∆I_CBO2= 100 percent of initial value

or 1 nA dc, whichever is greater.

∆h_FE3= ±20 percent

12

13

See 4.3.1

Subgroups 2 and 3 of table I herein;

∆I_CBO2= 100 percent of initial value

or 1 nA dc, whichever is greater;

∆h_FE3= ±25 percent

Subgroup 2 of table I herein; ∆I_CBO2= 100

percent of initial value or 1 nA dc, whichever is

greater; ∆h_FE3= ±25 percent

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements for JANTX and JANTXV levels..

4.3.1 Power burn-in conditions. V_CB= 10 - 30 V dc. Power shall be applied to achieve T_J=135°C minimum and

using a minimum P_D= 75 percent of P_Tmaximum rated as defined in 1.3. With approval of the qualifying activity and

preparing activity, alternate burn-in criteria (hours, bias conditions, T_J, and mounting conditions) may be used for

JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the

manufacturing site’s burn-in data and performance history will be essential criteria for burn-in modification approval.

4.3.2 Thermal response. For very small junction devices such as this, the term “thermal response” shall be used

in lieu of “thermal impedance” although measurements shall be performed the same manner as thermal impedance in

accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining I , I , t , t_SW(V_C

M

H H

and V_Hwhere appropriate). Measurement delay time (t_MD) = 70 µs max. See table II, group E, subgroup 4 and

figures 5 and 6 herein.

4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

9

MIL-PRF-19500/355R

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B,

subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)

and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.8 herein. See 4.4.2.2 for JAN,

JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN,

JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and 4.5.8

herein.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

B4

Method

1037

Condition

V_CB= 10 V dc.

B5

1027

V_CB= 10 V dc, P_D≥ 100 percent of maximum rated P_T(see 1.3). (NOTE: If a failure

occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours min, sample size in accordance with table E-VIa of MIL-PRF-19500,

adjust T_Aor P_Dto achieve T_J= +275°C minimum.

Option 2: 216 hours min., sample size = 45, c = 0; adjust T_Ato achieve T_J= +225°C

minimum.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic

failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a

failure is identified as wafer lot or wafer processing related, the entire wafer lot and related devices assembled from

the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has

been implemented and the devices from the wafer lot are screened to eliminate the failure mode.

Step

1

Method

1026

Condition

Steady-state life: 1,000 hours minimum, V_CB= 10 V dc, power shall be applied to achieve

T_J= +150°C minimum using a minimum of P_D= 75 percent of maximum rated P_Tas defined

in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time

decreased as long as the devices are stressed for a total of 45,000 device hours minimum,

and the actual time of test is at least 340 hours.

2

3

1048

1032

Blocking life, T_A= +150°C, V_CB= 80 percent of rated voltage, 48 hours minimum.

n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, T_A= +200°C. n = 22, c = 0.

10

MIL-PRF-19500/355R

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.

See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)

herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with

table I, subgroup 2 and 4.5.8 herein.

4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.

Subgroup Method Condition

C2

2036

Test condition E, not applicable to surface mount.

R_θJAand R_θJConly, as applicable (see 1.3) and 4.3.2.

C5

C6

3131

1026

1,000 hours at V_CB= 10 V dc; power shall be applied to achieve T_J= +150°C minimum and

a minimum of P_D= 75 percent of maximum rated P_Tas defined in 1.3 n = 45, c = 0. The

sample size may be increased and the test time decreased as long as the devices are

stressed for a total of 45,000 device hours minimum, and the actual time of test is at least

340 hours.

4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup Method Condition

C2

2036

3131

Test condition E, not applicable to surface mount.

C5

C6

R_θJAand R_θJConly, as applicable (see 1.3) and 4.3.2.

Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

*

4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence, as applicable (see 6.2 herein) except group D, subgroup 2 may be performed separate from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to

the fluence profile.

11

MIL-PRF-19500/355R

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the

applicable steps of 4.5.8.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Testing of units. All specified electrical tests, including end-point tests, shall be performed equally on both

sections of the transistor types covered herein, except where the electrical characteristic being evaluated applies to

the transistor as a device entity.

4.5.3 Disposition of leads when testing characteristics of each section. During the measurement of the

characteristics of each section, the leads of the section not under test shall be open-circuited.

4.5.4 Forward-current-gain ratio. The value for the forward-current-gain ratio for each individual section of a dual

unit shall be measured using method 3076 of MIL-STD-750. The forward-current-gain ratio shall be calculated by

dividing one of the values by the other. If possible, this ratio shall be measured directly to improve accuracy.

4.5.5 Base-emitter-voltage differential. The base-emitter-voltage differential shall be determined by connecting

the emitters of the individual sections together, applying specified electrical test conditions to each individual section

in accordance with method 3066 of MIL-STD-750, test condition B, and measuring the absolute value of the voltage

between the bases of the individual sections of a dual unit.

4.5.6 Base-emitter-voltage differential change with temperature. The value of the base-emitter-voltage differential

shall be measured at the two specified temperatures in accordance with 4.5.5 except that the polarities of the

differentials and identities of the individual sections shall be maintained. The absolute value of the algebraic

difference between the values at the two temperature extremes shall be calculated. A mathematical formula for this

parameter is:

|(V_BE1(T₁) - V_BE2(T₁)) - (V_BE1(T₂) - V_BE2(T₂)) |

4.5.7 Noise figure test. Noise figure shall be measured using Quan Tech Laboratories test set model no.

2173C/2181, or equivalent. Conditions shall be as specified in table I.

4.5.8 Delta requirements. Delta requirements shall be as specified below:

Step

1

Inspection

MIL-STD-750

Conditions

Symbol

Limit

Method

3036

Min

Max

Collector-base

cutoff current

Bias condition D,

V_CB= 45 V dc

100 percent of initial

value or 1 nA dc,

∆I_CBO2

whichever is greater.

2

Forward current

transfer ratio

3076

±25 percent change

from initial reading.

∆h_FE3

V_CE= 5 V dc; I_C= 1 mA dc;

pulsed, see 4.5.1

12

MIL-PRF-19500/355R

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Conditions

Limit

Unit

Symbol

Method

2071

Min

Max

Subgroup 1 2/

Visual and mechanical

examination 3/

Solderability 3/ 4/

2026

1022

n = 15 leads, c = 0

Resistance to solvents

3/ 4/ 5/

n = 15 devices, c = 0

Temp cycling 3/ 4/

1051

1071

Test condition C, 25 cycles.

n = 22 devices, c = 0

Hermetic seal 4/ 6/

Fine leak

n = 22 devices, c = 0

Gross leak

Electrical measurements 4/

Bond strength 3/ 4/

Table I, subgroup 2

2037

Precondition

T_A= +250°C at t = 24 hours or

T_A= +300°C at t = 2 hours

n = 11 wires, c = 0

Decap internal visual (design

verification) 4/

2075

3131

N = 4 devices, c = 0

Subgroup 2

Thermal response

See 4.3.2.

°C/W

Z

θJX

Collector to base cutoff current

Emitter to base cutoff current

3036

3061

3011

10

µA dc

V dc

Bias condition D, V_CB= 70 V dc

Bias condition D, V_EB= 6 V dc

I_CBO1

I_EBO1

Breakdown voltage, collector to

emitter

60

Bias condition D; I = 10 mA dc;

V

(BR)CEO

C

pulsed (see 4.5.1)

Collector to base cutoff current

3036

3041

2

nA dc

Bias condition D; V = 45 V dc

I

CB

CBO2

CEO1

Collector to emitter cutoff

current

Bias condition D; V = 5 V dc

CE

Emitter to base cutoff current

Forward-current transfer ratio

3061

3076

2

nA dc

Bias condition D; V = 5 V dc

I

EB

EBO2

V

= 5 V dc; I = 10 µA dc

h

CE

C

FE1

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

60

175

240

600

Forward-current transfer ratio

3076

V

= 5 V dc; I = 100 µA dc

h

C

FE2

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

100

235

325

800

See footnotes at end of table.

13

MIL-PRF-19500/355R

* TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Limit

Unit

Symbol

Method

3076

Conditions

Min

Max

600

Subgroup 2 - Continued

Forward-current transfer ratio

V

= 5 V dc; I = 1 mA dc;

h

FE3

CE

C

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2020U

150

300

1,000

Base-emitter saturation

voltage

3066

Test condition A;

0.5

1.0

V dc

I

= 1.0 mA dc; I = 100 µA dc;

V

C

B

BE(sat)1

CE(sat)1

Collector-emitter saturation

voltage

3071

3076

I

= 1.0 mA dc; I = 100 µA dc;

C

B

0.3

1.1

Forward-current

transfer ratio (gain ratio)

V

= 5 V dc, I = 100 µA dc

h_{FE 2−1}

h_{FE 2− 2}

CE

C

*

0.9

(see 4.5.4)

Absolute value of

base-emitter-voltage

differential

3066

Test condition B; V = 5 V dc,

CE

5

3

5

mV dc

|V

- V

|

BE1

BE2

1

I

= 10 µA dc (see 4.5.5)

C

Absolute value of

base-emitter-voltage

differential

Test condition B; V = 5 V dc,

CE

|V

- V

|

2

BE1

BE2

I

= 100 µA dc (see 4.5.5)

C

Absolute value of

base-emitter-voltage

differential

Test condition B; V = 5 V dc,

CE

3

I

= 1 mA dc (see 4.5.5)

C

Subgroup 3

High temperature operation

T

= +150°C

A

Base-emitter-voltage

3066

3036

3076

3066

0.8

2.5

mV dc

Test condition B; V = 5 V dc,

|∆V

-V

∆T_A|

1

CE

BE1

BE2

*

(nonsaturated) (absolute

value of differential change

with temperature) 6/

I

= 100 µA dc

C

T

= +125°C and +25°C

A

(see 4.5.6)

Collector to base cutoff

current

Bias condition D; V = 45 V dc

CB

µA dc

I

CBO3

Low temperature operation

T

= -55°C

A

Forward-current transfer

ratio

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

V

= 5 V dc; I = 10 µA dc

h

FE4

CE

C

20

50

Base-emitter-voltage

1

mV dc

Test condition B; V = 5 V dc,

|∆V

-V

∆T |

BE2 A 2

CE

BE1

*

(nonsaturated) (absolute

value of differential change

with temperature) 6/

I

= 100 µA dc

C

T

= +25°C and -55°C

A

(see 4.5.6)

See footnotes at end of table.

14

MIL-PRF-19500/355R

*

TABLE I. Group A inspection - Continued.

Inspection 1/

Subgroup 4

MIL-STD-750

Limit

Unit

Symbol

Method

Conditions

Min

3

Max

Small-signal short-circuit input

impedance

3201

3211

3216

V

= 5 V dc; I = 1 mA dc;

C

f = 1 kHz

CE

30

1 x 10^-3

60

kΩ

h

ie

Small-signal open-circuit

reverse voltage transfer ratio

V

= 5 V dc; I = 1 mA dc;

CE

C

h_re

f = 1 kHz

Small-signal open-circuit

output admittance

V

= 5 V dc; I = 1 mA dc;

CE

C

µmhos

h

oe

f = 1 kHz

Small-signal short-circuit

forward current transfer ratio

(magnitude h_fe)

3306

V

= 5 V dc; I = 0.5 mA dc;

CE

C

3

20

5

| h

|

f = 20 MHz

fe

Open circuit output

capacitance

3236

3246

V

= 5 V dc; I = 0

E

CB

pF

C

obo

100 kHz ≤ f ≤ 1 MHz

Noise figure

V

= 5 V dc, I = 10 µA dc

CE

C

R = 10 kΩ, (see 4.5.7)

g

Test 1

Test 2

Test 3

f = 100 Hz

f = 1 kHz

f = 10 kHz

F1

F2

F3

5

3

dB

Subgroup 5

3041

20

nA dc

Bias condition D; V = 40 V dc

I

CES

Collector to emitter cutoff

current

CE

Subgroups 6 and 7

Not required

1/ For sampling plan see MIL-PRF-19500.

2/ For resubmission of failed test in subgroup 1 of table I, double the sample size of the failed test or sequence of

tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall

be rerun upon submission.

3/ Separate samples may be used.

4/ Not required for JANS devices.

5/ Not required for laser marked devices.

6/ When using table I, subgroup 2 as electrical end-points, this test is only required for JANS end-points.

15

MIL-PRF-19500/355R

* TABLE II. Group D inspection.

Inspection 1/ 2/ 3/

Subgroup 1 4/

MIL-STD-750

Conditions

Limit

Unit

Method

Symbol

Min

Max

Neutron irradiation

1017

3036

3061

3011

Neutron exposure V_CES= 0 V

Collector to base cutoff current

Cutoff current, emitter to base

20

µA dc

V dc

Bias condition D; V = 70 V dc

I

CB

CBO1

Bias condition D; V = 6 V dc

EB

EBO1

Breakdown voltage, collector to

emitter

60

Bias condition D; I = 10 mA dc;

V

(BR)CEO

C

pulsed (see 4.5.1)

Collector to base cutoff current

Emitter to base cutoff current

3036

3061

4

nA dc

Bias condition D; V = 45 V dc

I

CB

CBO2

CEO1

EBO2

Bias condition D; V = 5 V dc

CE

Emitter to base cutoff current

Forward-current transfer ratio

3061

3076

Bias condition D; V = 5 V dc

EB

[h_FE1] 5/

V

= 5 V dc; I = 10 µA dc

CE

C

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

[30]

[87.5]

240

600

Forward-current transfer ratio

3076

3066

[h_FE2] 5/

= 5 V dc; I = 100 µA dc

C

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

[50]

[117.5]

325

800

Forward-current transfer ratio

= 5 V dc; I = 1 mA dc;

[h ] 5/

C

FE3

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

[75]

[150]

600

1,000

Base-emitter saturation voltage

Test condition A;

0.50

1.15

V dc

I

= 1.0 mA dc; I = 100 µA dc;

V

C

B

BE(sat)1

Collector-emitter saturation

voltage

3071

3076

I

= 1.0 mA dc; I = 100 µA dc;

C

B

0.35

1.2

V

CE(sat)1

Forward-current

V

= 5 V dc, I = 100 µA dc

h_{FE 2−1}

h_{FE 2− 2}

CE

C

*

transfer ratio (gain ratio)

0.8

(see 4.5.4)

Absolute value of

base-emitter-voltage

differential

3066

Test condition B; V = 5 V dc,

CE

5.8

3.5

mV dc

|V

- V

|

BE1

BE2

1

I

= 10 µA dc (see 4.5.5)

C

Absolute value of

base-emitter-voltage differential

Test condition B; V = 5 V dc,

CE

|V

- V

2

I

= 100 µA dc (see 4.5.5)

C

See footnotes at end of table.

16

MIL-PRF-19500/355R

* TABLE II. Group D inspection - Continued.

Inspection 1/ 2/ 3/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 1 4/ - Continued.

Absolute value of

base-emitter-voltage differential

3066

Test condition B; V = 5 V dc,

|V

- V

|

BE2 3

CE

BE1

5.8

mV dc

I

= 1 mA dc (see 4.5.5)

C

Base-emitter-voltage

(nonsaturated) (absolute

value of differential change

with temperature)

Test condition B; V = 5 V dc,

CE

0.92

|∆V

∆T_A|

-V

BE1

BE2

I

= 100 µA dc

C

1

T

= +25°C and -55°C

A

(see 4.5.6)

Base-emitter-voltage

(nonsaturated) (absolute

value of differential change

with temperature)

3066

Test condition B; V = 5 V dc,

CE

1.15

mV dc

|∆V

∆T

-V

BE1

I

= 100 µA dc

C

|

A

2

T

= +125°C and +25°C

A

(see 4.5.6)

Subgroup 2

Total dose irradiation

1019

3036

Gamma exposure VCES = 40 V

Collector to base cutoff current

20

µA dc

V dc

Bias condition D; V = 70 V dc

I

CB

CBO1

Cutoff current, emitter to base

3061

3011

Bias condition D; V = 6 V dc

EB

EBO1

Breakdown voltage, collector to

emitter

60

Bias condition D; I = 10 mA dc;

V

(BR)CEO

C

pulsed (see 4.5.1)

Collector to base cutoff current

Emitter to base cutoff current

3036

3061

4

nA dc

Bias condition D; V = 45 V dc

I

CB

CBO2

CEO1

EBO2

Bias condition D; V = 5 V dc

CE

Emitter to base cutoff current

Forward-current transfer ratio

3061

3076

Bias condition D; V = 5 V dc

EB

[h_FE1] 5/

V

= 5 V dc; I = 10 µA dc

CE

C

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

[30]

[87.5]

240

600

Forward-current transfer ratio

3076

[h_FE2] 5/

= 5 V dc; I = 100 µA dc

C

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

[50]

[117.5]

325

800

Forward-current transfer ratio

= 5 V dc; I = 1 mA dc;

[h ] 5/

FE3

C

2N2919, 2N2919L, 2N2919U

2N2920, 2N2920L, 2N2920U

[75]

[150]

600

1,000

See footnotes at end of table.

17

MIL-PRF-19500/355R

* TABLE II. Group D inspection - Continued.

Inspection 1/ 2/ 3/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

1.15

Subgroup 2 - Continued.

Base-emitter saturation voltage

3066

Test condition A;

0.50

V dc

I

= 1.0 mA dc; I = 100 µA dc;

V

C

B

BE(sat)1

CE(sat)1

Collector-emitter saturation

voltage

3071

3076

I

= 1.0 mA dc; I = 100 µA dc;

C

B

0.35

1.2

Forward-current

transfer ratio (gain ratio)

V

= 5 V dc, I = 100 µA dc

h_{FE 2−1}

h_{FE 2− 2}

*

CE

C

0.8

(see 4.5.4)

Absolute value of

base-emitter-voltage

differential

3066

Test condition B; V = 5 V dc,

CE

5.8

mV dc

|V

- V

|

1

BE1

BE2

I

= 10 µA dc (see 4.5.5)

C

Absolute value of

base-emitter-voltage differential

3066

Test condition B; V = 5 V dc,

CE

3.5

5.8

mV dc

|V

- V

|

2

BE1

BE2

I

= 100 µA dc (see 4.5.5)

C

Absolute value of

base-emitter-voltage differential

Test condition B; V = 5 V dc,

CE

3

I

= 1 mA dc (see 4.5.5)

C

Base-emitter-voltage

(nonsaturated) (absolute

value of differential change

with temperature)

Test condition B; V = 5 V dc,

CE

0.92

|∆V

∆T_A|

-V

BE1

BE2

I

= 100 µA dc

C

1

T

= +25°C and -55°C

A

(see 4.5.6)

Base-emitter-voltage

(nonsaturated) (absolute

value of differential change

with temperature)

3066

Test condition B; V = 5 V dc,

CE

1.15

mV dc

|∆V

-V

BE1

I

= 100 µA dc

C

∆T

|

2

A

T

= +125°C and +25°C

A

(see 4.5.6)

1/ Tests to be performed on all devices receiving radiation exposure.

2/ For sampling plan, see MIL-PRF-19500.

3/ Electrical characteristics apply to the corresponding L and U suffix versions unless otherwise noted.

4/ See 6.2.e herein.

5/ See method 1019 of MIL-STD-750 for how to determine [h_FR] by first calculating the delta (1/h_FE) from the pre- and

Post-radiation h_FE. Notice the [h_FE] is not the same as h_FEand cannot be measured directly. The [h_FE] value

can never exceed the pre-radiation minimum h_FEthat it is based upon.

18

MIL-PRF-19500/355R

TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only.

MIL-STD-750

Conditions

Qualification

Inspection

Method

Subgroup 1

12 devices

c = 0

Temperature cycling

(air to air)

1051

1071

Test condition C, 500 cycles.

Hermetic seal

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and 4.5.8 herein.

Subgroup 2

45 devices

c = 0

Intermittent life

1037

Intermittent operation life: V_CB= 10 V dc, 6,000

cycles, adjust device current, or power, to achieve a

minimum ∆T_Jof +100°C.

Electrical measurements

See table I, subgroup 2 and 4.5.8 herein.

Subgroup 4

Sample size

N/A

Thermal response curves

See 4.2.1.1.

Subgroup 5

Not applicable

Subgroup 6

Electrostatic discharge

(ESD)

1020

1033

Subgroup 8

45 devices

c = 0

Reverse stability

Condition B.

19

MIL-PRF-19500/355R

Maximum Thermal Impedance

Calculated Thermal Impedance per Side Reflecting True Peak Tj

1000

100

10

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

10000

Time (s)

FIGURE 5. For each side: Thermal resistance = 875°C/W, Pt = 200 mW.

20

MIL-PRF-19500/355R

Maximum Thermal Impedance

Calculated Thermal Impedance Both Sides Reflecting True Peak Tj

1000

100

10

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Time (s)

FIGURE 6. Both sides: Thermal resistance = 500°C/W, Pt = 350 mW.

21

MIL-PRF-19500/355R

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these

personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging

requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or

Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the

managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting

the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. Product assurance level and type designator.

e. For acquisition of RHA designated devices, table II, subgroup 1 testing of group D herein is optional.

If subgroup 1 is desired, it should be specified in the contract.

*

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or

not such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from DLA

Land and Maritime, Columbus, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail

vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products

Database (QPD) at https://assist.dla.mil .

6.4 Suppliers of JANHC die. The qualified JANHC suppliers with the applicable letter version (example

JANHCA2N2919) will be identified on the QML.

JANHC and JANKC ordering information

Manufacturer

43611

34156

JANHCA2N2919

JANHCB2N2919, JANHCB2N2920

2N2919

JANKCA2N2919

JANKCB2N2919, JANKCB2N2920

22

MIL-PRF-19500/355R

6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians:

Army - CR

Navy - EC

Air Force - 85

NASA - NA

DLA - CC

Preparing activity:

DLA - CC

(Project 5961-2012-112)

Review activities:

Army - AR, MI, SM

Navy - AS, MC

Air Force - 19, 99

*

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil .

23


型号：	JANTX2N2920L
厂家：	Microsemi
描述：	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-78, 6 PIN 小信号双极晶体管
文件：	总23页 (文件大小：393K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JANTX2N2920L [MICROSEMI]

相关型号：

JANTX2N2920U

JANTX2N2944A

JANTX2N2944AUB

JANTX2N2945A

JANTX2N2945A

JANTX2N2945AUB

JANTX2N2946A

JANTX2N2946A

JANTX2N3019

JANTX2N3019

JANTX2N3019S

JANTX2N3027