JANTX2N3762L [MICROSEMI]
PNP SWITCHING SILICON TRANSISTOR; PNP开关硅晶体管
| 型号： | JANTX2N3762L |
| 厂家： | 
Microsemi |
| 描述： | PNP SWITCHING SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 396
Devices
Qualified Level
JAN
JANTX
JANTXV
2N3762
2N3762L
2N3763
2N3763L
2N3764
2N3765
MAXIMUM RATINGS
Ratings
2N3762* 2N3763*
Symbol
Unit
2N3764
2N3765
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
60
Vdc
Vdc
VCEO
VCBO
VEBO
IC
40
60
TO-39* (TO-205AD)
5.0
1.5
Vdc
2N3762, 2N3763
Adc
2N3762* 1 2N3764 2
2N3763*
2N3765
Total Power Dissipation @ TA = +250C
Operating & Storage Junction Temp. Range
1.0
0.5
W
PT
-55 to +200
0C
Top, T
stg
TO-5*
THERMAL CHARACTERISTICS
Characteristics
2N3762L, 2N3763L
Symbol
Max.
2N3762*
2N3763*
Unit
2N3764
2N3765
88
Thermal Resistance Junction-to-Case
60
0C/W
R
qJC
TO-46* (TO-206AB)
2N3764, 2N3765
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/0C for TA > +250C
2) Derate linearly at 2.86 mW/0C for TA > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
40
60
Vdc
2N3762, 2N3764
2N3763, 2N3765
V(BR)
CEO
Collector-Base Cutoff Current
VCB = 20 Vdc
VCB = 30 Vdc
VCB = 40 Vdc
VCB = 60 Vdc
100
100
10
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
hAdc
mAdc
ICBO
10
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
Symbol
Min.
Max.
Unit
100
100
hAdc
VEB = 2.0 Vdc, VCE = 20 Vdc
VEB = 2.0 Vdc, VCE = 30 Vdc
Emitter-Base Cutoff Current
VEB = 2.0 Vdc
2N3762, 2N3764
2N3763, 2N3765
ICEX
200
10
10
All Types
2N3762, 2N3764
2N3763, 2N3765
hAdc
mAdc
IEBO
VEB = 5.0 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
35
40
40
30
20
30
20
140
120
80
hFE
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
IC = 1.5 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
0.1
0.22
0.5
VCE(sat)
Vdc
Vdc
0.9
0.8
1.0
1.2
1.4
VBE(sat)
0.9
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz
1.8
1.5
6.0
6.0
2N3762, 2N3764
2N3763, 2N3765
½hfe½
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
25
80
pF
pF
Cobo
Cibo
VEB = 0.5 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
VCC = 30 Vdc, VEB = 0,
td
tr
ts
tf
Delay Time
8.0
35
80
35
hs
hs
hs
hs
Rise Time
IC = 1.0 mAdc, IB1 = 100 mAdc
Storage Time
VCC = 30 Vdc, VEB = 0,
Fall Time
IC = 1.0 mAdc, IB1 = 100 mAdc
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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