JANTX2N6546 [MICROSEMI]

NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
JANTX2N6546
型号: JANTX2N6546
厂家: Microsemi    Microsemi
描述:

NPN POWER SILICON TRANSISTOR
NPN功率硅晶体管

晶体 晶体管 功率双极晶体管
文件: 总2页 (文件大小:59K)
中文:  中文翻译
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TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 525  
Devices  
Qualified Level  
JAN  
2N6546  
2N6547  
JANTX  
JANTXV  
MAXIMUM RATINGS  
2N6546 2N6547  
Ratings  
Symbol  
Units  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
300  
600  
400  
850  
VCEO  
VCEX  
VEBO  
IB  
Vdc  
8
Vdc  
10  
Adc  
Collector Current  
15  
175  
100  
Adc  
W
W
0C  
IC  
Total Power Dissipation  
@ TC = +250C (1)  
@ TC = +1000C (1)  
PT  
Operating & Storage Temperature Range  
TO-3 (TO-204AA)*  
-65 to +200  
Top,  
T
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C  
Symbol  
Max.  
Unit  
0C/W  
1.0  
R
qJC  
*See Appendix A for Package  
Outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Vdc  
2N6546  
2N6547  
V(BR)  
300  
400  
CEO  
Collector-Emitter Cutoff Current  
VCE = 600 Vdc; VBE = 1.5 Vdc  
VCE = 850 Vdc; VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 8 Vdc  
2N6546  
2N6547  
mAdc  
mAdc  
ICEX  
1.0  
1.0  
IEBO  
1.0  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  
2N6546, 2N6547 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
ON CHARACTERISTICS (3)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 1 Adc; VCE = 2 Vdc  
IC = 5 Adc; VCE = 2 Vdc  
IC = 10 Adc; VCE = 2 Vdc  
Base-Emitter Saturated Voltage  
IB = 2.0 Adc; IC = 10 Adc  
15  
12  
6
hFE  
60  
Vdc  
Vdc  
VBE(sat)  
1.6  
Collector-Emitter Saturated Voltage  
IB = 2.0 Adc; IC = 10 Adc  
IB = 3.0 Adc; IC = 15 Adc  
VCE(sat)  
1.5  
5.0  
DYNAMIC CHARACTERISTICS  
Magnitude of Common-Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
½hfe½  
IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz  
Output Capacitance  
VCB = 10 Vdc, IE = 0, 0.1 MHz £ f £ 1.0 MHz  
6.0  
30  
pF  
Cobo  
500  
SWITCHING CHARACTERISTICS  
Turn-On Time  
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc  
Turn-Off Time  
ton  
ms  
ms  
1.0  
4.7  
toff  
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc  
SAFE OPERATING AREA  
DC Tests  
TC = +250C; tp = 1 s; 1 cycle (See Figure 3 of MIL-PRF-19500/525)  
Test 1  
VCE = 11.7 Vdc; IC = 15 Adc  
Test 2  
VCE = 20 Vdc; IC = 8.75 Adc  
Test 3  
VCE = 250 Vdc; IC = 45 mAdc  
VCE = 350 Vdc; IC = 30 mAdc  
Unclamped Inductive lOAD  
2N6546  
2N6547  
TC = +250C; duty cycle £ 10%; RS = 0.1 W; tr = tf £ 500 hs (See Figure 4 of MIL-PRF-19500/525)  
Test 1  
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 W; VBB1 = 38.5 Vdc; RBB2 = 50 W;  
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 15 Adc; L = 10 mH  
Test 2  
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 W; VBB1 = 38.5 Vdc; RBB2 = 50 W;  
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 100 mAdc; L = 1 mH  
Clamped Inductive Load  
TA = +250C; duty cycle £ 5%; Tp = 1.5 ms; (vary to obtain IC); VCC = 20 Vdc; IC = 8 Adc; L = 180 mH  
(See Figure 5 of MIL-PRF-19500/525)  
Clamped Voltage = 350 Vdc  
Clamped Voltage = 450 Vdc  
2N6546  
2N6547  
3.) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  

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