JANTXV1N3070-1 [MICROSEMI]
Rectifier Diode, 1 Element, 0.1A, Silicon, SIMILAR TO DO-7, 2 PIN;
| 型号： | JANTXV1N3070-1 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.1A, Silicon, SIMILAR TO DO-7, 2 PIN |
| 文件： | 总17页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 4 February 2010.
INCH-POUND
MIL-PRF-19500/169N
2 NOVEMBER 2009
SUPERSEDING
MIL-PRF-19500/169M
10 APRIL 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,TYPES 1N3070, 1N3070-1,
1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
Device types 1N3070, 1N3070-1, 1N3070UR-1, and 1N4938 are inactive for new design (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, switching diodes. Three levels of
product assurance are provided for each device type and two product assurance levels are provided for die, as
specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (DO-35), 2 (DO-7), 3 (DO-213AA), 4 and 5 (die).
1.3 Maximum ratings. T = +25°C, unless otherwise specified.
A
V
BR
V
RWM
I
I
I
T
R
R
ΘJEC
(2)
R
O(PCB)
= 75°C (1)
FSM1
t = 1s
FSM2
t = 1µs
STG
ΘJL
ΘJA(PCB)
(2) (3)
and T
L = .375 inch
(9.53 mm) (2)
T
p
J
A
p
V dc
200
V (pk)
175
mA
mA (pk) A (pk)
500
°C
°C/W
°C/W
°C/W
100
2
-65 to +175
250
100
325
(1) For temperature-current derating curves, see figure 6.
(2) See figures 7 and 8 for thermal impedance curves.
(3) T = +75°C for both axial and metal electrode leadless face diodes (MELF) (UR) on printed circuit board
A
(PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR) = .061 inch
(1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm)
x 1 inch (25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R
ΘJA
with a defined PCB thermal
resistance condition included is measured at I = 200 mA dc.
O
1.4 Primary electrical characteristics. T = +25°C, unless otherwise indicated.
A
V
I
at
t
rr
F1
R1
I
= 100mA dc
V
R
= 175 V dc
F
V dc
1.0
ns
50
µA dc
0.1
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at http://assist.daps.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/169N
DO-35
Dimensions
Millimeters
Symbol
Inches
Min
Max
.075
.180
.022
1.500
Min
1.42
3.56
0.46
25.40
Max
1.91
4.57
0.56
38.10
BD
BL
LD
LL
.056
.140
.018
1.000
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 1. Physical dimensions of 1N4938, 1N4938-1 and 1N3070-1 (DO-35).
2
MIL-PRF-19500/169N
DO-7
Dimensions
Inches Millimeters
Type
Symbol
Min
Max
.107
.300
.022
Min
Max
2.72
7.62
0.56
BD
BL
LD
LL
.078
.195
.018
1.98
4.95
0.46
1N3070
1N3070-1
1.000 1.500 25.40 38.10
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 2. Physical dimensions of 1N3070 and 1N3070-1 (DO-7).
3
MIL-PRF-19500/169N
UR
DO-213AA
Dimensions
Inches Millimeters
Min Max
Symbol
Min
1.60
3.30
0.41
0.03
Max
1.70
3.71
0.56
BD
BL
ECT
S
.063
.130
.016
.001
.067
.146
.022
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions are pre-solder dip.
4. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 3. Physical dimensions and configuration for 1N3070UR-1 and 1N4938UR-1 (DO-213AA).
4
MIL-PRF-19500/169N
Design Data
Metallization:
Top: Cathode Au
Back: Anode Au
Dimension
Inches Millimeters
Symbol
Min
.019
.008
.007
Max
.025
.012
.011
Min
0.48
0.20
0.18
Max
0.64
0.30
0.28
Au thickness: Top: 10,000Å minimum
Au thickness: Back: 4,000Å minimum
A
B
C
Chip thickness: 9 mils ±2 mils (0.229mm ±0.051mm)
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
FIGURE 4. JANC (A-version) die dimensions for 1N4938.
5
MIL-PRF-19500/169N
Design Data
Metallization:
Top: Anode Al
Back: Cathode Au
Dimension
Inches Millimeters
Symbol
Min
.016
.016
.007
Max
.018
.018
.009
Min
0.41
0.41
0.18
Max
0.46
0.46
0.23
Al thickness: Top: 25,000Å minimum
Au thickness: Back: 4,000Å minimum
A
B
C
Chip thickness: 9 mils ±1 mil (0.23mm ±0.025mm)
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
* FIGURE 5. JANC (B-version) die dimensions for 1N4938.
6
MIL-PRF-19500/169N
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or
http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1 (DO-35), 2 (DO-7), 3 (DO-213AA), 4 and 5 (die).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Diode construction. All devices shall be metallurgically bonded, double plug construction in accordance with
the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the
axial direction to optimize tensile and compressive stresses. Dimensional analysis is required of all materials used to
achieve axial thermal compensation. Dimensional tolerances and corresponding coefficient of thermal expansion
(CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying
activity to maintain qualification. Dimensional tolerances shall be sufficiently tight enough to prevent excessive
stresses due to the inherent CTE mismatch. The UR version shall be structurally identical to the axial leaded
versions except for end-cap lead attachment.
7
MIL-PRF-19500/169N
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturer’s identification and date code
shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The
polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, and
JANTXV can be abbreviated as J, JX, and JV, respectively. The part number may be reduced to J4938, JX4938, or
JV4938. No color coding shall be permitted for part numbering.
3.5.1 UR devices. For ‘UR’ version devices only, all marking, except polarity may be omitted from the body, but
shall be retained on the initial container. Polarity marking of ‘UR’ devices shall consist as a minimum, a band or three
contrasting dots around the periphery of the cathode.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not require the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (JANTXV, JANTX, and JAN levels). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screening
(see table E-IV of
MIL-PRF-19500)
JANTXV and JANTX level
Thermal impedance (see 4.3.3)
(1) 3c
9
10
Not required
Method 1038 of MIL-STD-750, condition A
I
and V
(2) 11
12
(3) (4) 13
R1
See 4.3.2
Subgroup 2 of table I herein; ∆I
F1
= 100 percent of initial value or 50 nA dc,
R1
whichever is greater; ∆V ≤ 25mVdc.
F1
(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
(2) Test within 24 hours after removal from test.
(3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13.
(4) PDA ≤ 5 percent.
8
MIL-PRF-19500/169N
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
appendix G of MIL-PRF-19500. Burn-in duration for the JANHC follows JANTX requirements; the JANKC level
follows JANS requirements.
4.3.1.1 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in
accordance with MIL-PRF-19500 JANTX level screening level requirements.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.1): Method 1038 of
MIL-STD-750, condition B. V = rated V
; f = 50 - 60 Hz; I (min) or I . The maximum current
= I
R
RWM
O
F(min) O(PCB)
density of small die shall be submitted to the qualifying activity for approval. With approval of the qualifying activity
and preparing activity, alternate burn-in criteria (hours, bias conditions, mounting conditions) may be used for JANTX
and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing
site’s burn-in data and performance history will be essential criteria for burn-in modification approval.
4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining I , I , t , t
(V and V where
C H
M H H SW
appropriate). Measurement delay time (t
) = 70 µs max. See table II, group E, subgroup 4 herein.
MD
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500,
table I herein, and as specified herein. Electrical measurements (end-points) shall be in accordance with table I,
subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2.
* 4.4.2.1 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Leaded samples from
the same lot may be used in lieu of ‘UR’ suffix sample for life test.
Subgroup Method
Conditions
B2
B2
1056
1051
0°C to +100°C, 10 cycles.
-55°C to +175°C, 45 cycles, including screening.
= +150°C; (not applicable to UR package).
B2
B3
2005
1026
I = 100 mA, axial tensile stress = 10 lbs, T
A
F
V
= rated V
; f = 50 - 60 Hz; I = 100 mA dc minimum; adjust T or I to obtain a
(pk)
minimum T of +150°C (see 4.5.1).
RWM
O
A
O
J
B4
B6
2101
1032
Decap analysis; scribe and break only.
= +175°C.
T
A
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
9
MIL-PRF-19500/169N
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup Method Conditions
C2
C2
C2
1056
1051
2036
0°C to + 100°C, 10 cycles.
-55°C to + 175°C, 45 cycles including screening.
Tension - test condition A; weight = 10 pounds, t = 15 s; lead fatigue = condition E
(not applicable to ‘UR’ suffix types).
C5
C6
4081
1026
L = .375 inch (9.53 mm), R
22 devices, c = 0.
= 250°C/W maximum; R = 100°C/W; (see 4.3.3),
ΘJEC
ΘJL
1,000 hours minimum, V(
pk)
= rated V
; f = 50 - 60 Hz; I = 100 mA dc minimum; adjust
RWM
O
T or I to obtain a minimum T of +150°C (see 4.5.1).
A
O
J
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Free air power burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided
that each device under test still sees the full P (minimum) and that the minimum applied voltage, where applicable, is
t
maintained throughout the burn-in period. Method 3100 of MIL-STD-750 shall be used to measure T
J.
4.5.2 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of
MIL-STD-750.
10
MIL-PRF-19500/169N
TABLE I. Group A inspection.
MIL-STD-750
Conditions
Limit
Min Max
Inspection 1/
Subgroup 1
Symbol
Unit
Method
2071
Visual and mechanical
examination
Subgroup 2
Thermal impedance 2/
Forward voltage
3101
4011
4021
4016
See 4.3.3
Z
°C/W
V dc
ΘJX
I
I
= 100 mA dc
V
V
1.0
F
F1
Breakdown voltage
Reverse current
200
V dc
= 100 µA dc
BR
R1
R
DC method, V = 175 V dc
I
I
100
nA dc
R
Subgroup 3
High temperature operation:
Reverse current
T
= +150°C
A
4016
4011
DC method, V = 175 V dc
100
1.2
µA dc
R
R2
Low temperature operation:
Forward voltage
T
= -55°C
A
I
= 100 mA dc
V
V dc
F
F2
Subgroup 4
Junction capacitance
4001
4031
V
V
= 0 V dc, f = 1 MHz,
C
5.0
50
pF
ns
R
1
= 50 mV
maximum
p-p
sig
Reverse recovery time
t
rr
Condition B, I = 30 mA dc,
F
I
= 30 mA dc, I
= 3.0 mA dc
R(REC)
R
Scope display evaluation
4023
Method 4023 of MIL-STD-750,
figures 4023-3, -7, -9, -10 only
Subgroup 5
Not applicable
Subgroup 6
Surge current
4066
I
= 0 mA dc; ten surges at 1 for each
F
minute; t = 1 µs; I
= 2.0 A (pk)
p
FSM
Electrical measurements
Table I, subgroup 2
1/ For sampling plan, see MIL-PRF-19500.
2/ Not applicable to JANC.
11
MIL-PRF-19500/169N
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
MIL-STD-750
Qualification
inspection
Inspection
Method
Conditions
Subgroup 1
Thermal shock (glass strain)
Temperature cycling
Hermetic seal
n = 45, c = 0
1056
1051
1071
100 cycles 0°C to 100°C
500 cycles, -65°C to +175°C
Gross leak only
Electrical measurement
Subgroup 2
See table I, subgroup 2
Intermittent operating life
Electrical measurements
Subgroup 4
1037
10,000 cycles
See table I, subgroup 2
Thermal impedance curves
Subgroup 5
See MIL-PRF-19500
Not applicable
n = 3
Subgroup 6
1020
1057
ESD
n = 45
Subgroup 8
Test condition B. Test until failure occurs or to a
maximum of 25 cycles, whichever comes first.
Resistance to glass cracking
n = 22, c = 0
Subgroup 9
1055
Monitored mission
temperature cycling
See table I, subgroup 2
Electrical measurements
12
MIL-PRF-19500/169N
Temperature-Current Derating Curve
DC Operation
= 325°C/W
T
PCB
(°C) (PCB)
R
ΘJA(PCB)
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ T
J
specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and current rating
J
specified (see 1.3).
3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.
J
4. Derate design curves chosen at T ≤ 125°C, and 110°C to show current rating where most users want to limit
J
T in their application.
J
FIGURE 6. Temperature-current derating graph (all devices).
13
MIL-PRF-19500/169N
1N4938-1, 1N4938 DO-35 Axial T = 25°C
L
Maximum Thermal Impedance Plots
1000
100
10
1
0.0001
0.001
0.01
0.1
Time (s)
1
10
100
R
= 250°C/W
ΘJL
NOTE: Z
= 70°C/W maximum at t = 10ms.
ΘJX
H
FIGURE 7. Thermal impedance (axial leads).
14
MIL-PRF-19500/169N
1N4938UR-1 DO-213AA T
= 25°C
EC
Maximum Thermal Impedance Plots
1000
100
10
1
0.0001
0.001
0.01
0.1
1
10
Time (s)
R
= 100°C/W
ΘJEC
NOTE: Z
= 70°C/W maximum at t = 10ms.
ΘJX
H
FIGURE 8. Thermal impedance (MELF surface mount).
15
MIL-PRF-19500/169N
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The
notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
e. Destructive physical analysis when requested.
* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail
vqe.chief@dla.mil . An online listing of products qualified to this specification may be found in the Qualified Products
Database (QPD) at http://assist.daps.dla.mil .
* 6.4 Substitution information. Device types 1N3070, 1N3070-1, 1N3070UR-1, and 1N4938 are inactive for new
design as of the date of this specification. The 1N4938-1 devices are a direct substitute and preferred for the
1N3070-1 and non dash-one devices. The following table shows the direct substitutability.
Superseded part
number
Superseding part
number
1N3070
1N4938-1
1N3070-1
1N4938
1N4938-1
1N4938-1
1N3070UR-1
1N4938UR-1
16
MIL-PRF-19500/169N
* 6.5 Suppliers of die. The qualified die suppliers with the applicable letter version (e.g., JANHCA1N4938,
JANHCB1N4938) will be identified on the QML.
JANC ordering information
Manufacturer
PIN
43611
JANHCA1N4938, JANKCA1N4938
JANHCB1N4938, JANKCB1N4938
1N4938
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2008-118)
Review activities:
Army - MI, SM
Navy - AS
Air Force - 19, 99
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http://assist.daps.dla.mil .
17
相关型号：
JANTXV1N3154A
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
JANTXV1N3154UR-1
Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
JANTXV1N3154UR-1
Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
CDI-DIODE
JANTXV1N3155-1
Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
MICROSEMI
JANTXV1N3155UR-1
Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
JANTXV1N3156-1
Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
MICROSEMI
JANTXV1N3156A
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
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