JANTXV1N5806US [MICROSEMI]
RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP; 整流器效率高， ESP ， 2.5安培至20 AMP
| 型号： | JANTXV1N5806US |
| 厂家： | 
Microsemi |
| 描述： | RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP |
| 文件： | 总2页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5802 thru 1N5806
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-
19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak
reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. They are also
available in surface-mount packages (see separate data sheet for 1N5802US thru
1N5806US). Microsemi also offers numerous other rectifier products to meet higher
and lower current ratings with various recovery time speed requirements including
standard, fast and ultrafast in both through-hole and surface-mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5802 to 1N5806 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
• Controlled avalanche with peak reverse power
19500/477
capability
• Surface mount equivalents also available in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
• Storage Temperature: -65oC to +175oC
• Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC
• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
•
•
•
•
•
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN
AVERAGE
RECTIFIED RECTIFIED
CURRENT CURRENT
AVERAGE
MAXIMUM
FORWARD
VOLTAGE
@ 1 A
REVERSE
CURRENT
(MAX)
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
PEAK
VOLTAGE
(MIN.)
REVERSE
TYPE
VOLTAGE
@ 100µA
I
@
I
@
@ V
I
O1
O2
RWM
FSM
(8.3 ms pulse)
VF
V
t
IR
(NOTE 3)
V
TL=+75ºC
(NOTE 1)
AMPS
TA=+55ºC
(Note 2)
AMPS
RWM
rr
BR
VOLTS
VOLTS
VOLTS
AMPS
ns
µA
25oC
100oC 25oC 100oC
1N5802
1N5803
1N5804
1N5805
1N5806
50
75
55
80
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
0.875
0.800
0.800
0.800
1
1
1
1
1
50
50
50
50
50
35
35
35
35
35
25
25
25
25
25
100
125
150
110
135
160
0.875
0.875
NOTE 1: IO1 is rated at 2.5 A @ TL = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for TL above 75ºC.
NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC.
NOTE 3: TA = 25oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I = 0.5 A, I
= 0.5 A, I
= .05 A
F
RM
R(REC)
Copyright 2004
7-16-2004 REV A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5802 thru 1N5806
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Definition
Symbol
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range
VRWM
Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
IO
VF
IR
C
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing
from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse
current occurs.
trr
GRAPHS
FIGURE 1
OUTPUT CURRENT vs. LEAD TEMP.
PACKAGE DIMENSIONS inches/[mm]
NOTE: Lead tolerance = +0.002/-0.003 inches
Copyright 2004
Microsemi
Scottsdale Division
Page 2
7-16-2004 REV A
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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