JANTXV1N6462US [MICROSEMI]

Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, SURFACE MOUNT PACKAGE-2;


型号：	JANTXV1N6462US
厂家：	Microsemi
描述：	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, SURFACE MOUNT PACKAGE-2 局域网二极管
文件：	总6页 (文件大小：491K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N6461US – 1N6468US

Qualified Levels:

JAN, JANTX, and

JANTXV

Voidless Hermetically Sealed Unidirectional

Available on

commercial

versions

Transient Voltage Suppressors

Qualified per MIL-PRF-19500/551

DESCRIPTION

This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient

Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for

high-reliability applications where a failure cannot be tolerated. Working peak “standoff”

voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing

and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded

packages for thru-hole mounting.

“B” SQ-MELF

Package

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

•

Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.

Available as 500 watt peak pulse power (P_PP).

Also available in:

Working peak “standoff” voltage (V_WM) from 5.0 to 51.6 volt.

High surge current and peak pulse power provides transient voltage protection for sensitive circuits.

Triple-layer passivation.

“B” Package

(axial –leaded)

1N6461 - 1N6468

Internal “Category 1” metallurgical bonds.

Voidless hermetically sealed glass package.

JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in

reference to MIL-PRF-19500 is also available.

(See part nomenclature for all available options.)

•

RoHS compliant versions available (commercial grade only).

APPLICATIONS / BENEFITS

•

Military and other high-reliability applications.

Extremely robust construction.

ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.

Protection from secondary effects of lightning per select levels in IEC61000-4-5.

Square-end-cap terminals for easy placement.

Nonsensitive to ESD per MIL-STD-750 method 1020.

Inherently radiation hard as described in Microsemi “MicroNote 050”.

MAXIMUM RATINGS @ 25 ºC

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Parameters/Test Conditions

Symbol

T_Jand T_STG

R_ӨJEC

I_FSM

Value

-55 to +175

Unit

^oC

Junction and Storage Temperature

Thermal Resistance, Junction to Endcap

Forward Surge Current @ 8.3 ms half-sine

Forward Voltage @ 1 Amp

ºC/W

Fax: (978) 689-0803

V_F

1.5

MSC – Ireland

P_PP

500

Peak Pulse Power @ 10/1000 µs

Reverse Power Dissipation ⁽¹⁾

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

P_R

2.5

^oC

Solder Temperature @ 10 s

260

Notes: 1. Derate at 50 mW/^oC (see figure 4).

Website:

www.microsemi.com

T4-LDS-0286-1, Rev. 1 (4/24/13)

Page 1 of 6

1N6461US – 1N6468US

MECHANICAL and PACKAGING

CASE: Hermetically sealed voidless hard glass with tungsten slugs.

•

TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only.

MARKING: Body paint and part number.

POLARITY: Cathode band.

TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.

WEIGHT: Approximately 750 milligrams.

See Package Dimensions on last page.

PART NOMENCLATURE

JAN 1N6461 US e3

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

CDS (reference JANS)

Blank = commercial

RoHS Compliance

e3 = RoHS compliant (available

on commercial grade only)

Blank = non-RoHS compliant

MELF Package

JEDEC type number

See Electrical Characteristics

table

SYMBOLS & DEFINITIONS

Definition

Symbol

Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in

temperature expressed in %/°C or mV/°C.

α_V(BR)

V_(BR)

V_WM

I_D

Breakdown Voltage: The voltage across the device at a specified current I_(BR)in the breakdown region.

Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage

that may be continuously applied over the standard operating temperature.

Standby Current: The current through the device at rated stand-off voltage.

Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse

current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an

external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.

I_PP

Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an

impulse current (I_PP) for a specified waveform.

V_C

Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The

impulse power is the maximum-rated value of the product of I_PPand V_C.

P_PP

T4-LDS-0286-1, Rev. 1 (4/24/13)

Page 2 of 6

1N6461US – 1N6468US

ELECTRICAL CHARACTERISTICS

MINIMUM

BREAK

DOWN

VOLTAGE

V_(BR)

BREAKDOWN

CURRENT

I _(BR)

RATED

WORKING

STANDOFF

VOLTAGE

V_WM

MAXIMUM

STANDBY

CURRENT

I_D

MAXIMUM

CLAMPING

VOLTAGE

V_C

MAXIMUM

PEAK IMPULSE

CURRENT

I_PP

MAXIMUM

TEMP. COEF.

α_V(BR)

TYPE

@ V_RWM

@ 10/1000 µs

@ 8/20

µs

@ 10/1000

µs

@ I_(BR)

Volts

5.6

V (pk)

9.0

A (pk)

315

258

125

107

A (pk)

%/^oC

-0.03, +0.045

+0.060

µA

3000

2500

500

1N6461US

1N6462US

1N6463US

1N6464US

1N6465US

1N6466US

1N6467US

1N6468US

6.5

11.0

22.6

26.5

41.4

47.5

63.5

78.5

13.6

16.4

27.0

33.0

43.7

54.0

+0.085

+0.096

30.5

40.3

51.6

+0.098

+0.101

+0.103

T4-LDS-0286-1, Rev. 1 (4/24/13)

Page 3 of 6

1N6461US – 1N6468US

GRAPHS

Pulse Time (tp)

FIGURE 1

Peak Pulse Power vs Pulse Time

Time (t) in Milliseconds

FIGURE 2

10/1000 µs Current Impulse Waveform

T4-LDS-0286-1, Rev. 1 (4/24/13)

Page 4 of 6

1N6461US – 1N6468US

GRAPHS

Time (t) in Milliseconds

FIGURE 3

8/20 µs Current Impulse Waveform

T – Temperature - °C

FIGURE 4

Derating Curve

T4-LDS-0286-1, Rev. 1 (4/24/13)

Page 5 of 6

1N6461US – 1N6468US

PACKAGE DIMENSIONS

Inch

Max

Millimeters

Min

Max

ECT

0.137 0.148

0.200 0.225

0.019 0.028

3.48

3.76

5.08

0.48

0.08

5.72

0.71

---

0.003

---

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for information only.

3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.

4. Dimensions are pre-solider dip.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

PAD LAYOUT

INCH

MILLIMETERS

0.288

0.070

0.155

7.32

1.78

3.94

Note: If mounting requires adhesive

separate from the solder, an additional

0.080 inch diameter contact may be placed

in the center between the pads

as an optional spot for cement.

T4-LDS-0286-1, Rev. 1 (4/24/13)

Page 6 of 6

JANTXV1N6462US [MICROSEMI]

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