JANTXV2N1893 [MICROSEMI]
NPN LOW POWER SILICON TRANSISTOR; NPN小功率硅晶体管
| 型号： | JANTXV2N1893 |
| 厂家： | 
Microsemi |
| 描述： | NPN LOW POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 182
Devices
Qualified Level
JAN
JANTX
JANTXV
2N1893
2N1893S
2N720A
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
VCER
IC
All Devices
Units
Vdc
80
Collector-Base Voltage
120
Vdc
7.0
Vdc
Emitter-Base Voltage
TO-18 (TO-206AA)*
2N720A
100
500
Vdc
Collector-Emitter Voltage (RBE = 10 W)
Collector Current
mAdc
2N720A 2N1893, S
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
0.5
1.8
0.8
3.0
W
0C
PT
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
srg
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S Unit
97 58
0C/W
TO-5*
2N1893, 2N1893S
Thermal Resistance, Junction-to-Case
R
qJC
1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10 W
Collector-Base Cutoff Current
VCB = 120 Vdc
Vdc
Vdc
V(BR)
CEO
80
V(BR)
CER
100
mAdc
hAdc
ICBO
10
10
VCB = 90 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
mAdc
hAdc
IEBO
10
10
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N720A; 2N1893; 2N1893S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Voltage
20
35
40
hFE
120
5.0
1.3
Vdc
Vdc
VCE(sat)
VBE(sat)
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
½hfe½
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
VCE =5.0 Vdc, IC = 1.0 mAdc
VCE =10 Vdc, IC = 5.0 mAdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
VCB = 10 Vdc, IC = 5.0 mAdc
Small-Signal Short-Circuit Output Admittance
VCB = 10 Vdc, IC = 5.0 mAdc
Output Capacitance
3.0
10
hfe
35
45
100
8.0
0.5
15
hib
hob
W
mW
PF
4.0
Cobo
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
2
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
ton + toff
hs
(See Figure 3 of MIL-PRF-19500/182)
30
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
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