JANTXV2N2222AUBP [MICROSEMI]
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | JANTXV2N2222AUBP |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, |
| 文件： | 总9页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
2N2222A
Features
SWITCHING
TRANSISTOR
JAN, JANTX, JANTXV
·
·
·
·
Meets MIL 19500 /255
Collector - Base Voltage 75 V
Collector - Current 800 mA
High Speed, Medium Current Bipolar Transistor
SMALL SIGNAL
BIPOLAR
NPN SILICON
TO-18
COLLECTOR
BASE
EMITTER
Maximum Ratings
RATING
SYMBOL
VCEO
VCBO
VEBO
IC
VALUE
UNIT
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
WATTS
mW/°C
°C
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ TA = 25 °C
Derate above 25 °C
Total Device Dissipation @ TC = 25 °C
Derate above 25 °C
50
75
6
800
500
2.85
1.8
10.3
PD
PD
Operating Junction&Storage Temperature Range
TJ, Tstg
- 65 to + 200
Thermal Characteristics
CHARACTERISTIC
SYMBOL
Rq JA
MAX
350
UNIT
°C/W
Thermal Resistance, Junction to Ambient
MSCO275A 01-29-98
DSW2N2222A < - > ( 33807)
2N2222A
Electrical Characteristics (T = 25°C unless otherwise noted)
A
OFF CHARACTERISTIC
SYMBOL
V(BR)CEO
MIN
50
75
6
MAX
UNIT
Vdc
Collector - Emitter Breakdown Voltage
( IC = 10 mA dc, IB = 0 )
Collector - Base Breakdown Voltage
( IC = 10 mAdc, IE = 0 )
Emitter - Base Breakdown Voltage
( IE = 10 mAdc, IC = 0 )
(1)
(1)
(1)
V(BR)CBO
V(BR)EBO
ICES
Vdc
Vdc
Collector - Emitter Cutoff Current
( VCE = 50 Vdc, VBE(off) = 0 V )
Collector - Base Cutoff Current
( VCB = 60 Vdc, IE = 0 )
50
nAdc
ICBO
10
10
nAdc
mAdc
( VCB = 60 Vdc, IE = 0, TA = 150 °C )
Emitter - Base Cutoff Current
IEBO
( VEB = 4 Vdc )
10
nAdc
UNIT
ON CHARACTERISTIC
DC Current Gain
SYMBOL
hFE
MIN
MAX
50
75
100
100
30
( IC = 100 mA dc, VCE = 10 Vdc )
( IC = 1 mA dc, VCE = 10 Vdc )
( IC = 10 mA dc, VCE = 10 Vdc )
( IC = 150 mA dc, VCE = 10 Vdc )
( IC = 500 mA dc, VCE = 10 Vdc )
325
300
(1)
(1)
35
( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55°C )
Collector - Emitter Saturation Voltage
VCE(sat)
( IC = 150 mAdc, IB = 15 mAdc )
( IC = 500 mAdc, IB = 50 mAdc )
Base - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc )
( IC = 500 mAdc, IB = 50 mAdc )
(1)
(1)
0.3
1.0
Vdc
Vdc
VBE(sat)
(1)
(1)
0.6
1.2
2.0
Vdc
Vdc
1. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
MSCO275A 01-29-98
DSW2N2222A < - > ( 33807)
2N2222A
Electrical Characteristics (T = 25°C unless otherwise noted)
A
SMALL - SIGNAL CHARACTERISTICS
Output Capacitance
SYMBOL
Cobo
MIN
MIN
MAX
8
UNIT
pF
( VCB = 10 Vdc, IE = 0, 100kHz £ f £ 1 MHz )
Input Capacitance
Cibo
25
pF
( VEB = 0.5 Vdc, IC = 0, 100kHz £ f £ 1 MHz )
SWITCHING CHARACTERISTICS
Turn - On Time
SYMBOL
ton
MAX
UNIT
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 =15 mAdc)
Turn - Off Time
( See FIGURE 1 )
35
ns
ns
toff
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 )
300
Small - Signal AC Characteristics (T = 25°C)
A
LOW FREQUENCY
SYMBOL
hfe
MIN
50
MAX
UNIT
Common - Emitter Forward Current Transfer Ratio
(IC = 1 mA, VCE = 10 V, f = 1kHz)
HIGH FREQUENCY
Common - Emitter Forward Current Transfer Ratio
(IC = 20 mA, VCE = 20 V, f = 100 MHz)
|hfe|
2.5
* 1
S p i c e M o d e l (based upon typical device characteristics)
Q2N2222A NPN ( IS = 19.34n XT = 3.0
+ NE = 1.647 IKF = 3.0
EG = 1.11
NK = 0.3052
RC = 0.3567
VAF=250.3
XTB = 1.5
CJC = 11.02p
BF = 163.8
BR = 11.49
VJC = 0.3869 MJC = 0.3292
ISE =174.3f
ISC = 19.9f
+ NC = 1.88
+ FC = 0.5
IKR = 10.75
CJE = 29.31p VJE = 0.9036
VTF=10 )
MJE = 0.4101 TR = 38.32n TF =361.8p
+ ITF = 5.282 XTF = 249.9
*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be
used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer.
MSCO275A 01-29-98
DSW2N2222A < - > ( 33807)
2N2222A
L
TO 18 CASE OUTLINE
19.8 MIL TYP
SQUARE
DIE CHARACTERISTICS
Back is Collector
(B)
Chip Thickness is:
10 MILS TYP
(E)
Metalization is:
Top = Al, Back = Au
DIE OUTLINE
MSC0275A 11-10-97
DSW2N2222A < - > ( 33807)
2N2222A
FIGURE 1 Saturated Turn-on Time Test Circuit
FIGURE 2 Saturated Turn-off Time Test Circuit
MSC0275A 11-10-97
DSW2N2222A < - > ( 33807)
2N2222A
DC CURRENT GAIN
TJ = 25 C VCE = 10 V
250
200
150
100
50
250
200
150
100
50
typ
0
0
-4
-3
-2
-1
0
10
10
10
10
10
IC COLLECTOR CURRENT (A)
FIGURE 3
COLLECTOR SATURATION vs BASE CURRENT
TJ = 25 C
1.0
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.6
0.4
0.2
0.0
IC = 10 mA
IC = 150 mA
IC = 500 mA
-5
-4
-3
-2
-1
0
10
10
10
10
10
10IB, BASE CURRENT (A)
FIGURE 4
MSC0275A 11-10-97
DSW2N2222A < - > ( 33807)
2N2222A
BASE SATURATION vs BASE CURRENT
TJ = 25 C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
IC = 500 mA
IC = 150 mA
IC = 10 mA
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
IB, BASE CURRENT (A)
FIGURE 5
JUNCTION CAPACITANCE
TJ = 25 C 100 kHz < f < 1 MHz
30
25
20
15
10
5
CIBO
COBO
0
.1
1
10
100
REVERSE JUNCTION VOLTAGE (V)
FIGURE 6
MSC0275A 11-10-97
DSW2N2222A < - > ( 33807)
2N2222A
SMALL SIGNAL CURENT GAIN vs COLLECTOR CURRENT
TJ = 25 C VCE = 10 V f = 1kHz
250
200
150
100
250
200
150
100
typ.
.1
1
10
100
COLLECTOR CURRENT (mA)
FIGURE 7
HIGH FREQUENCY GAIN
TJ = 25 C VCE = 20 V f = 100 MHz
5
4
3
2
1
0
5
4
3
2
1
0
typ.
1
10
100
COLLECTOR CURRENT (mA)
FIGURE 8
MSC0275A 11-10-97
DSW2N2222A < - > ( 33807)
2N2222A
GAIN vs FREQUENCY
TJ = 25 C IC = 20 mA VCE = 20 V
40
30
20
10
0
40
30
20
10
0
typ.
10
100
1000
FREQUENCY (MHz)
FIGURE 9
MSC0275A 11-10-97
DSW2N2222A < - > ( 33807)
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