JANTXV2N5415 [MICROSEMI]
PNP LOW POWER SILICON TRANSISTOR; PNP小功率硅晶体管
| 型号： | JANTXV2N5415 |
| 厂家： | 
Microsemi |
| 描述： | PNP LOW POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 485
Devices
Qualified Level
JAN
JANTX
JANTXV
2N5415
2N5415S
2N5416
2N5416S
MAXIMUM RATINGS
Ratings
Symbol 2N5415 2N5416 Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
200
300
Vdc
Vdc
Vdc
Adc
VCEO
VCBO
VEBO
IC
200
350
6.0
1.0
TO- 5*
2N5415, 2N5416
Total Power Dissipation @ TA = +250C
@ TC = +250C
0.75
10
W
W
0C
PT
Operating & Storage Temperature Range
-65 to +200
Top, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
17.5
R
qJC
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
1) Derate linearly 4.28 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 150 Vdc
VCE = 200 Vdc
VCE = 250 Vdc
VCE = 300 Vdc
mAdc
mAdc
mAdc
mAdc
2N5415
2N5415
2N5416
2N5416
50
1.0
50
ICEO
1.0
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
mAdc
20
Collector-Emitter Cutoff Current
VCE = 200 Vdc, VBE = 1.5 Vdc
VCE = 300 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 175 Vdc
VCB = 280 Vdc
Collector-Base Cutoff Current
VCB = 200 Vdc
mAdc
mAdc
2N5415
2N5416
ICEX
50
50
mAdc
mAdc
2N5415
2N5416
ICBO1
50
50
2N5415
2N5416
ICBO2
500
500
VCB = 350 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Voltage
30
15
120
2.0
1.5
hFE
Vdc
Vdc
VCE(sat)
VBE
IC = 50 mAdc, VCE = 10 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Forward
Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
3.0
25
15
½hfe½
hfe
15
75
pF
pF
Cobo
Cibo
VEB = 5.0 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc
Turn-Off Time
ton
ms
ms
1.0
10
toff
VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C; 1 Cycle; t = 0.4 s
Test 1
VCE = 10 Vdc, IC = 1.0 Adc
Test 2
VCE = 100 Vdc, IC = 100 mAdc
Test 3
VCE = 200 Vdc, IC = 24 mAdc
Test 4
VCE = 300 Vdc, IC = 10 mAdc
2N5415
2N5416
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
JANTXV2N5546
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71,
TEMIC
©2020 ICPDF网 联系我们和版权申明