JANTXV2N6277 [MICROSEMI]
PNP POWER SILICON TRANSISTOR; PNP功率硅晶体管
| 型号： | JANTXV2N6277 |
| 厂家： | 
Microsemi |
| 描述： | PNP POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 514
Devices
Qualified Level
JAN
2N6274
2N6277
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6274 2N6277 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
100
150
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCBO
VEBO
IB
120
180
6.0
20
50
Collector Current
IC
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C (2)
PT
Tj, T
250
143
W
W
0C
Operating & Storage Junction Temperature Range
-65 to +200
stg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.43 W/0C between TC = +250C and TC = +2000C
TO-3*
(TO-204AA)
Symbol
Max.
0.7
Unit
0C/W
R
qJC
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Symbol
Min.
Max.
Unit
Vdc
100
150
IC = 50 mAdc
2N6274
2N6277
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 50 Vdc
VCE = 75 Vdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = -1.5 Vdc
VCE = 180 Vdc, VBE = -1.5 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
50
50
mAdc
mAdc
2N6274
2N6277
ICEO
10
10
2N6274
2N6277
ICEX
IEBO
ICBO
100
mAdc
mAdc
Collector-Base Cutoff Current
VCB = 120 Vdc
VCB = 180 Vdc
10
10
2N6274
2N6277
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N6274, 2N6277 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 4.0 Vdc
IC = 20 Adc, VCE = 4.0 Vdc
IC = 50 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 20 Adc, IB = 2.0 Adc
IC = 50 Adc, IB = 10 Adc
Base-Emitter Saturation Voltage
IC = 20 Adc, IB = 2.0 Adc
50
30
10
120
hFE
1.0
3.0
Vdc
Vdc
VCE(sat)
1.8
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
3.0
12
½hfe½
IC = 1.0 Adc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1.0 MHz
600
pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 80 Vdc; IC = 20 Adc; IB = 2.0 Adc
Turn-Off Time
ton
ms
ms
0.5
toff
1.05
VCC = 80 Vdc; IC = 20 Adc; IB1 = -IB2 = 2.0 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 50 Adc
Test 2
VCE = 8.6 Vdc, IC = 165 mAdc
Test 3
All Types
All Types
2N6274
VCE = 80 Vdc, IC = 29 mAdc
Test 4
VCE = 120 Vdc, IC = 110 mAdc
2N6277
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
JANTXV2N6340
Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
MICROSEMI
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