JANTXV6464 [MICROSEMI]

Transient Suppressor,;
JANTXV6464
型号: JANTXV6464
厂家: Microsemi    Microsemi
描述:

Transient Suppressor,

文件: 总17页 (文件大小:386K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 26 November 2011.  
INCH-POUND  
MIL-PRF-19500/551E  
26 August 2011  
SUPERSEDING  
MIL-PRF-19500/551D  
18 October 2010  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR  
TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND  
1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500-watt peak pulse, power, silicon,  
transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as  
specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figures 1, 2, and 3.  
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of the electrical characteristics table  
herein and as follows:  
a.  
P
= 2.5 W (T = room ambient as defined in the general requirements of 4.5 of MIL-STD-750).  
R A  
Derate at 16.7 mW/°C for leaded devices and 50 mW/°C for surface mount devices (see figure 4).  
b.  
c.  
P
= 500 W (see figure 5) at t = 1 ms.  
PR p  
I
= 80 A(pk) at t = 8.33 ms (T = +25°C).  
FSM  
p
A
d. -55°C T +175°C; -55°C T  
op  
+175°C (ambient).  
STG  
1.4 Primary electrical characteristics. Primary electrical characteristic columns 2 and 4 of the electrical  
characteristics herein.  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This  
section does not include documents cited in other sections of this specification or recommended for additional  
information or as examples. While every effort has been made to ensure the completeness of this list, document  
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this  
specification, whether or not they are listed.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at https://assist.daps.dla.mil/.  
AMSC N/A  
FSC 5961  
 
 
MIL-PRF-19500/551E  
2.2 Government documents.  
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a  
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are  
those cited in the solicitation or contract.  
DEPARTMENT OF DEFENSE SPECIFICATIONS  
MIL-PRF-19500  
DEPARTMENT OF DEFENSE STANDARDS  
MIL-STD-750 Test Methods for Semiconductor Devices.  
-
Semiconductor Devices, General Specification for.  
-
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or  
https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,  
Philadelphia, PA 19111-5094.)  
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the  
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this  
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.  
3. REQUIREMENTS  
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.  
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a  
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)  
before contract award (see 4.2 and 6.3).  
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as  
specified in MIL-PRF-19500 and as follows:  
I
I
Maximum peak pulse current at a specified condition.  
P
Reverse breakdown current at a specified condition.  
End-cap temperature.  
(BR)  
T
EC  
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be  
as specified in MIL-PRF-19500 and on figures 1, 2, and 3 herein. The surface mount devices (US and URS) shall be  
structurally identical to the "non US" version except for lead attachment.  
3.4.1 Construction. These devices shall be constructed utilizing metallurgically bonded noncavity double plug  
construction between both sides of the silicon die and the terminal pins.  
3.4.2 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where  
a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).  
3.4.3. Metallurgical bond construction. Devices shall be metallurgically bonded, thermally matched, noncavity-  
double plug construction in accordance with MIL-PRF-19500, and herein.  
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.  
2
 
 
 
MIL-PRF-19500/551E  
3.5.1 Marking of US and URS versions. For US and URS versions only, all marking may be omitted from the  
device except for the cathode marking. US and URS devices shall be marked with a cathode band as a minimum, or  
a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. At  
the option of the manufacturer, US and URS devices may include laser marking on an end-cap, to include part  
number and lot date code for all levels. The prefixes JAN, JANTX, or JANTXV may be abbreviated as J, JX, or JV  
respectively. (For example: The part number may be reduced to JV6461).  
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance  
characteristics are as specified in 1.3, 1.4, and table I herein.  
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 1.3 and table  
I herein.  
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and  
shall be free from other defects that will affect life, serviceability, or appearance.  
3
MIL-PRF-19500/551E  
Dimensions  
Millimeters  
Ltr  
Inches  
Notes  
Min  
.115  
.150  
.037  
.900  
Max  
.145  
.300  
.042  
1.300  
.050  
Min  
2.92  
3.81  
0.94  
22.86  
Max  
3.68  
7.62  
1.07  
33.02  
1.27  
BD  
BL  
LD  
LL  
3, 4  
4
4
schematic symbol  
LL  
4
1
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Dimension BD shall be measured at the largest diameter.  
4. Dimension BL includes dimension LL region in which the diameter may vary from BD maximum to LD  
1
minimum.  
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.  
* FIGURE 1. Physical dimensions.  
4
 
MIL-PRF-19500/551E  
US  
Dimensions  
Inches Millimeters  
Ltr  
Min  
.137  
.200  
.019  
.003  
Max  
.148  
.225  
.028  
Min  
Max  
3.76  
5.72  
0.71  
BD  
BL  
ECT  
S
3.48  
5.08  
0.48  
0.08  
schematic symbol  
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.  
4. Dimensions are pre-solder dip.  
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.  
* FIGURE 2. Physical dimensions surface mount devices “US”.  
5
 
MIL-PRF-19500/551E  
URS  
Dimensions  
Inches Millimeters  
Min Max Min Max  
Ltr  
BD  
BL  
.137 .148 3.48 3.76  
.200 .225 5.08 5.72  
URS  
ECT .019 .028 0.48 0.71  
.003 0.08  
schematic symbol  
S
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Dimensions are pre-solder dip.  
4. One end-cap shall be square and the other end-cap shall be round.  
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.  
6. The cathode shall be connected to the round endcap.  
*
* FIGURE 3. Physical dimensions, surface mount devices “URS”.  
6
 
MIL-PRF-19500/551E  
4. VERIFICATION  
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:  
a. Qualification inspection (see 4.2).  
b. Screening (see 4.3).  
c. Conformance inspection (see 4.4 and tables I, II, and III).  
4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as  
specified herein. Lot accumulation period shall be 3 months in lieu of 6 weeks.  
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.  
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In  
case qualification was awarded to a prior revision of the specification sheet that did not require the performance of  
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on  
the first inspection lot of this revision to maintain qualification.  
4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of  
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I  
herein. Devices that exceed the limits of table I herein shall not be acceptable.  
Screen  
Measurement  
(see table E-IV of  
MIL-PRF-19500)  
JANTX and JANTXV levels  
9
Not applicable  
11  
12  
13  
Not applicable  
See 4.3.1  
Not applicable  
4.3.1 Burn-in (HTRB) and steady-state operation life (HTRB) conditions. This test shall be conducted with the  
devices subjected to test conditions in the following order of events and conditions:  
a. Pulse in accordance with 4.5.2b herein 20 times (screening and group B operation life test) and 100 times  
(group C) at T = room ambient as defined in the general requirements of MIL-STD-750.  
A
b. Read and record I and V  
BR  
at T = room ambient as defined in the general requirements of  
A
D
MIL-STD-750. Remove defective devices, and record the number of failures.  
(1) For 96 hours (JANTX and JANTXV) for the screening test.  
(2) For 340 hours (JANTX and JANTXV) for group B, steady-state operation life test.  
(3) For 1,000 hours for group C, steady-state operation life test.  
Read and record I and V  
(BR)  
at T = room ambient as defined in the general requirements of MIL-STD-750.  
A
D
Devices with I > 50 percent (100 percent for steady-state operation life) of initial value, or 20 percent of  
D
column 5 of table II, whichever is greater, or V  
= ±2 percent (±5 percent for steady-state operation life) of  
initial value shall be considered defective. Remove defective devices and record the number of failures.  
(BR)  
7
 
 
MIL-PRF-19500/551E  
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as herein.  
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I  
herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.  
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for  
subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical  
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.  
4.4.2.1 Group B inspection, table E-VIB of MIL-PRF-19500.  
Subgroup Method Conditions  
B3  
B5  
1026  
4081  
T = +125°C, (see 4.3.1).  
A
R
R
60°C/W at L = .375 inches (9.53 mm), non-surface mount devices;  
ΘJL  
20°C/W at L = 0 inches for surface mount devices.  
ΘJEC  
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for  
subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in  
accordance with table I, subgroup 2 herein.  
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.  
Subgroup Method  
Conditions  
C2  
2036  
Test condition A; weight = 12 pounds; t = 15 seconds minimum, (not applicable to  
surface mount devices).  
C2  
C5  
2036  
4081  
Test condition E (not applicable to surface mount devices).  
R
R
60°C/W at L = .375 inches (9.53 mm), non-surface mount devices;  
ΘJL  
20°C/W at L = 0 inches for surface mount devices.  
ΘJEC  
C6  
C7  
C8  
1026  
4071  
T = +125°C, (see 4.3.1). Leaded samples from the same lot may be used in lieu  
A
of surface mount devices.  
I
= column 3 of table II, αV  
, T = +25°C ±3°C; T = +125°C ±3°C;  
(BR)  
(BR)  
1
2
maximum limits = column 8 of table II. Sample size: 22 devices, c = 0.  
See 4.5.2.a, ten pulses, sample size: 22 devices, c = 0.  
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions  
specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Electrical measurements (end-  
points) shall be in accordance with table I, subgroup 2 herein.  
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.  
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.  
8
 
 
MIL-PRF-19500/551E  
4.5.2 Maximum peak pulse current (IPP ). The peak currents specified in column 7 of table II shall be applied in  
the reverse direction while simultaneously maintaining a reverse bias voltage of not less than the applicable voltage  
specified in column 4 of table II. The peak current shall be applied with a current versus time waveform as follows  
(one pulse per minute maximum):  
a. Pulse current shall reach 100 percent of I  
at t 8 µs and decay to 50 percent at t 20 µs for  
PP  
t = 20 µs (see figure 6).  
p
b. Pulse current shall reach 100 percent of I  
at t 10 µs and decay to 50 percent at t 1 ms for  
PP  
t = 1 ms (see figure 7).  
p
NOTE: Tolerance on pulse time shall be ±10 percent.  
4.5.3 Clamping voltage VC. The peak pulse clamping voltage shall be measured across the diode in a 1 ms time  
interval. The response detector shall demonstrate equipment accuracy of ±3 percent.  
9
 
 
 
MIL-PRF-19500/551E  
TABLE I. Group A inspection.  
MIL-STD-750  
Limits 2/  
Max  
Inspection 1/  
Subgroup 1  
Symbol  
Unit  
Method  
2071  
Conditions  
Min  
Visual and mechanical  
examination  
Subgroup 2  
Standby current  
4016  
4022  
DC method; V = V  
RWM  
of table II)  
(column 4  
I
Column 5 of  
table II  
µA dc  
R
D
Breakdown voltage  
V
(BR)1  
Column 2  
of table II  
V dc  
t
300 ms, duty cycle 2 percent;  
p
= column 3 of table II  
I
(BR)  
Forward voltage  
Subgroup 3  
4011  
I
= 1 A dc  
V
1.5  
V (pk)  
F
F
Low temperature  
operation  
T
t
= -55°C  
A
Breakdown voltage  
Subgroup 4  
4022  
V
(BR)2  
Column 9  
of table II  
V dc  
300 ms, duty cycle 2 percent;  
p
I
= column 3 of table II.  
(BR)  
Clamping voltage  
(see 4.5.3)  
t
I
= 1.0 ms (see 4.5.2.b)  
V
Column 6 of V (pk)  
table II  
p
C
= column 7 of table II  
PP  
Subgroup 5  
Not applicable  
Subgroup 6  
Forward surge current  
4066  
One pulse, half sine wave 8.3 ms;  
= 0, V = 0, T = +25°C  
I
80  
A (pk)  
V (pk)  
FSM  
I
F
RWM  
A
Electrical measurements  
Subgroup 7  
See table I, subgroup 2  
Clamping voltage  
inverse polarity  
maximum (see 4.5.3)  
t
= 1.0 ms (see 4.5.2.b) except use  
-V  
Column 11  
of table II  
p
C
forward direction current without  
prior bias voltage  
1/ For sampling plan, see MIL-PRF-19500.  
2/ Column references are to table II herein.  
10  
 
MIL-PRF-19500/551E  
TABLE II. Electrical characteristics. 1/  
Col 1 Col 2 Col 3 Col 4  
Col 5  
Col 6  
Col 7  
Col 8  
Col 9  
Col 10  
Col 11  
V
I
V
I
V
C
at  
I
V
(I )  
RM  
-V at  
C
αV  
(BR)1 (BR)  
at  
RWM  
D
PP  
(BR)2  
Minimum at Maximum  
dc current  
(BR)  
at  
t = 1 ms  
p
V
I
for  
I
BR  
I
RWM  
PP  
A(pk) = in  
accordance with  
column 7 inverse  
polarity  
(BR)  
t
= 20 µs  
t = 8 µs  
= 1 ms  
t
T =  
p
p
t
= 1 ms  
A
T
=
p
A
t = 10 µs  
r
r
+ 25°C  
- 55°C  
V dc mA dc V (pk)  
V (pk)  
9.0  
A (pk)  
315  
A (pk)  
56  
V dc  
5.4  
mA  
V(pk)  
-3.5  
µA dc  
%/°C  
-0.03,  
+0.045  
1N6461 5.6  
25  
5
3,000  
367  
1N6462 6.5  
1N6463 13.6  
1N6464 16.4  
20  
5
6
2,500  
500  
11.0  
22.6  
26.5  
258  
125  
107  
46  
22  
19  
+0.060  
+0.085  
+0.085  
6.2  
304  
139  
63  
-3.2  
-3.8  
-3.8  
12  
15  
13.0  
15.6  
5
500  
1N6465 27.0  
1N6466 33.0  
1N6467 43.7  
1N6468 54.0  
2
1
1
1
24  
50  
3
41.4  
47.5  
63.5  
78.5  
69  
63  
45  
35  
12  
11  
8
+0.096  
+0.098  
+0.101  
+0.103  
25.1  
30.2  
40.0  
48.5  
39  
34  
46  
20  
-3.6  
-3.6  
-3.5  
-3.4  
30.5  
40.3  
51.6  
2
2
6
1/ These limits apply to the US and URS device types also.  
11  
MIL-PRF-19500/551E  
* TABLE III. Group E inspection (all quality levels) for qualification only.  
MIL-STD-750  
Inspection  
Sampling plan  
Method  
Conditions  
45 devices,  
c = 0  
Subgroup 1  
Temperature cycling  
1051  
500 cycles, condition C, -55°C to +175°C  
See table I, subgroup 2  
Electrical measurements  
Subgroup 2  
22 devices,  
c = 0  
1,000 hours. See 4.3.1  
See table I, subgroup 2  
Life test  
1048  
Electrical measurements  
Subgroups 3, 4 and 5  
Not applicable  
Subgroup 7  
3 devices,  
c = 0  
*
Soldering heat  
Subgroup 8  
2031  
See 4.5.2. I  
shall be characterized by the supplier  
Peak pulse current  
PP  
and this data shall be available to the Government.  
Test shall be performed on each low and high voltage  
device for each structurally identical grouping. Test to  
failure.  
Electrical measurements  
Subgroup 9  
See table I, subgroup 2  
Resistance to glass  
cracking.  
1057  
Condition B  
12  
 
MIL-PRF-19500/551E  
FIGURE 4. Derating curve.  
13  
 
MIL-PRF-19500/551E  
FIGURE 5. Peak pulse power versus pulse time.  
14  
 
MIL-PRF-19500/551E  
FIGURE 6. Current impulse waveform.  
FIGURE 7. Current impulse waveform.  
15  
 
 
MIL-PRF-19500/551E  
5. PACKAGING  
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order  
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel  
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are  
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or  
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military  
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible  
packaging activity.  
6. NOTES  
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.  
The notes specified in MIL-PRF-19500 are applicable to this specification.)  
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design  
applications and logistic support of existing equipment.  
6.2 Acquisition requirements. Acquisition documents should specify the following:  
a. Title, number, and date of this specification.  
b. Lead finish (see 3.4.2).  
c. Packaging requirements (see 5.1).  
d. Product assurance level and type designator.  
e. Destructive physical analysis when requested.  
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,  
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not  
such products have actually been so listed by that date. The attention of the contractors is called to these  
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal  
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the  
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA  
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An  
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at  
https://assist.daps.dla.mil .  
16  
 
 
MIL-PRF-19500/551E  
6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where  
changes from the previous issue were made. This was done as a convenience only and the Government assumes  
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the  
requirements of this document based on the entire content irrespective of the marginal notations and relationship to  
the last previous issue.  
Custodians:  
Army - CR  
Navy - EC  
Air Force - 85  
NASA - NA  
DLA - CC  
Preparing activity:  
DLA - CC  
(Project 5961-2011-048)  
NOTE: The activities listed above were interested in this document as of the date of this document. Since  
organizations and responsibilities can change, you should verify the currency of the information above using the  
ASSIST Online database at https://assist.daps.dla.mil .  
17  

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SENSITRON

JANTXVCDLL2810

Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2
MICROSEMI

JANTXVCDLL5712

Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2
MICROSEMI

JANTXVCDLL6857

Rectifier Diode, Schottky, 1 Element, 0.15A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2
MICROSEMI

JANTXVCDLL6858

Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2
MICROSEMI

JANTXVD2N2904A

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
MICROSEMI

JANTXVD2N2904AL

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
MICROSEMI

JANTXVD2N2905

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
MICROSEMI