JANTXV6464 [MICROSEMI]
Transient Suppressor,;型号: | JANTXV6464 |
厂家: | Microsemi |
描述: | Transient Suppressor, |
文件: | 总17页 (文件大小:386K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 26 November 2011.
INCH-POUND
MIL-PRF-19500/551E
26 August 2011
SUPERSEDING
MIL-PRF-19500/551D
18 October 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR
TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND
1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500-watt peak pulse, power, silicon,
transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as
specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1, 2, and 3.
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of the electrical characteristics table
herein and as follows:
a.
P
= 2.5 W (T = room ambient as defined in the general requirements of 4.5 of MIL-STD-750).
R A
Derate at 16.7 mW/°C for leaded devices and 50 mW/°C for surface mount devices (see figure 4).
b.
c.
P
= 500 W (see figure 5) at t = 1 ms.
PR p
I
= 80 A(pk) at t = 8.33 ms (T = +25°C).
FSM
p
A
d. -55°C ≤ T ≤ +175°C; -55°C ≤ T
op
≤ +175°C (ambient).
STG
1.4 Primary electrical characteristics. Primary electrical characteristic columns 2 and 4 of the electrical
characteristics herein.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/551E
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or
https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows:
I
I
Maximum peak pulse current at a specified condition.
P
Reverse breakdown current at a specified condition.
End-cap temperature.
(BR)
T
EC
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be
as specified in MIL-PRF-19500 and on figures 1, 2, and 3 herein. The surface mount devices (US and URS) shall be
structurally identical to the "non US" version except for lead attachment.
3.4.1 Construction. These devices shall be constructed utilizing metallurgically bonded noncavity double plug
construction between both sides of the silicon die and the terminal pins.
3.4.2 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where
a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.3. Metallurgical bond construction. Devices shall be metallurgically bonded, thermally matched, noncavity-
double plug construction in accordance with MIL-PRF-19500, and herein.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
2
MIL-PRF-19500/551E
3.5.1 Marking of US and URS versions. For US and URS versions only, all marking may be omitted from the
device except for the cathode marking. US and URS devices shall be marked with a cathode band as a minimum, or
a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. At
the option of the manufacturer, US and URS devices may include laser marking on an end-cap, to include part
number and lot date code for all levels. The prefixes JAN, JANTX, or JANTXV may be abbreviated as J, JX, or JV
respectively. (For example: The part number may be reduced to JV6461).
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 1.3 and table
I herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
3
MIL-PRF-19500/551E
Dimensions
Millimeters
Ltr
Inches
Notes
Min
.115
.150
.037
.900
Max
.145
.300
.042
1.300
.050
Min
2.92
3.81
0.94
22.86
Max
3.68
7.62
1.07
33.02
1.27
BD
BL
LD
LL
3, 4
4
4
schematic symbol
LL
4
1
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dimension BL includes dimension LL region in which the diameter may vary from BD maximum to LD
1
minimum.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
* FIGURE 1. Physical dimensions.
4
MIL-PRF-19500/551E
US
Dimensions
Inches Millimeters
Ltr
Min
.137
.200
.019
.003
Max
.148
.225
.028
Min
Max
3.76
5.72
0.71
BD
BL
ECT
S
3.48
5.08
0.48
0.08
schematic symbol
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
4. Dimensions are pre-solder dip.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
* FIGURE 2. Physical dimensions surface mount devices “US”.
5
MIL-PRF-19500/551E
URS
Dimensions
Inches Millimeters
Min Max Min Max
Ltr
BD
BL
.137 .148 3.48 3.76
.200 .225 5.08 5.72
URS
ECT .019 .028 0.48 0.71
.003 0.08
schematic symbol
S
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions are pre-solder dip.
4. One end-cap shall be square and the other end-cap shall be round.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
6. The cathode shall be connected to the round endcap.
*
* FIGURE 3. Physical dimensions, surface mount devices “URS”.
6
MIL-PRF-19500/551E
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I, II, and III).
4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. Lot accumulation period shall be 3 months in lieu of 6 weeks.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not require the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
Measurement
(see table E-IV of
MIL-PRF-19500)
JANTX and JANTXV levels
9
Not applicable
11
12
13
Not applicable
See 4.3.1
Not applicable
4.3.1 Burn-in (HTRB) and steady-state operation life (HTRB) conditions. This test shall be conducted with the
devices subjected to test conditions in the following order of events and conditions:
a. Pulse in accordance with 4.5.2b herein 20 times (screening and group B operation life test) and 100 times
(group C) at T = room ambient as defined in the general requirements of MIL-STD-750.
A
b. Read and record I and V
BR
at T = room ambient as defined in the general requirements of
A
D
MIL-STD-750. Remove defective devices, and record the number of failures.
(1) For 96 hours (JANTX and JANTXV) for the screening test.
(2) For 340 hours (JANTX and JANTXV) for group B, steady-state operation life test.
(3) For 1,000 hours for group C, steady-state operation life test.
Read and record I and V
(BR)
at T = room ambient as defined in the general requirements of MIL-STD-750.
A
D
Devices with ∆I > 50 percent (100 percent for steady-state operation life) of initial value, or 20 percent of
D
column 5 of table II, whichever is greater, or ∆V
= ±2 percent (±5 percent for steady-state operation life) of
initial value shall be considered defective. Remove defective devices and record the number of failures.
(BR)
7
MIL-PRF-19500/551E
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table E-VIB of MIL-PRF-19500.
Subgroup Method Conditions
B3
B5
1026
4081
T = +125°C, (see 4.3.1).
A
R
R
≤ 60°C/W at L = .375 inches (9.53 mm), non-surface mount devices;
ΘJL
≤ 20°C/W at L = 0 inches for surface mount devices.
ΘJEC
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup Method
Conditions
C2
2036
Test condition A; weight = 12 pounds; t = 15 seconds minimum, (not applicable to
surface mount devices).
C2
C5
2036
4081
Test condition E (not applicable to surface mount devices).
R
R
≤ 60°C/W at L = .375 inches (9.53 mm), non-surface mount devices;
ΘJL
≤ 20°C/W at L = 0 inches for surface mount devices.
ΘJEC
C6
C7
C8
1026
4071
T = +125°C, (see 4.3.1). Leaded samples from the same lot may be used in lieu
A
of surface mount devices.
I
= column 3 of table II, αV
, T = +25°C ±3°C; T = +125°C ±3°C;
(BR)
(BR)
1
2
maximum limits = column 8 of table II. Sample size: 22 devices, c = 0.
See 4.5.2.a, ten pulses, sample size: 22 devices, c = 0.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
8
MIL-PRF-19500/551E
4.5.2 Maximum peak pulse current (IPP ). The peak currents specified in column 7 of table II shall be applied in
the reverse direction while simultaneously maintaining a reverse bias voltage of not less than the applicable voltage
specified in column 4 of table II. The peak current shall be applied with a current versus time waveform as follows
(one pulse per minute maximum):
a. Pulse current shall reach 100 percent of I
at t ≤ 8 µs and decay to 50 percent at t ≥ 20 µs for
PP
t = 20 µs (see figure 6).
p
b. Pulse current shall reach 100 percent of I
at t ≤ 10 µs and decay to 50 percent at t ≥ 1 ms for
PP
t = 1 ms (see figure 7).
p
NOTE: Tolerance on pulse time shall be ±10 percent.
4.5.3 Clamping voltage VC. The peak pulse clamping voltage shall be measured across the diode in a 1 ms time
interval. The response detector shall demonstrate equipment accuracy of ±3 percent.
9
MIL-PRF-19500/551E
TABLE I. Group A inspection.
MIL-STD-750
Limits 2/
Max
Inspection 1/
Subgroup 1
Symbol
Unit
Method
2071
Conditions
Min
Visual and mechanical
examination
Subgroup 2
Standby current
4016
4022
DC method; V = V
RWM
of table II)
(column 4
I
Column 5 of
table II
µA dc
R
D
Breakdown voltage
V
(BR)1
Column 2
of table II
V dc
t
≤ 300 ms, duty cycle ≤ 2 percent;
p
= column 3 of table II
I
(BR)
Forward voltage
Subgroup 3
4011
I
= 1 A dc
V
1.5
V (pk)
F
F
Low temperature
operation
T
t
= -55°C
A
Breakdown voltage
Subgroup 4
4022
V
(BR)2
Column 9
of table II
V dc
≤ 300 ms, duty cycle ≤ 2 percent;
p
I
= column 3 of table II.
(BR)
Clamping voltage
(see 4.5.3)
t
I
= 1.0 ms (see 4.5.2.b)
V
Column 6 of V (pk)
table II
p
C
= column 7 of table II
PP
Subgroup 5
Not applicable
Subgroup 6
Forward surge current
4066
One pulse, half sine wave 8.3 ms;
= 0, V = 0, T = +25°C
I
80
A (pk)
V (pk)
FSM
I
F
RWM
A
Electrical measurements
Subgroup 7
See table I, subgroup 2
Clamping voltage
inverse polarity
maximum (see 4.5.3)
t
= 1.0 ms (see 4.5.2.b) except use
-V
Column 11
of table II
p
C
forward direction current without
prior bias voltage
1/ For sampling plan, see MIL-PRF-19500.
2/ Column references are to table II herein.
10
MIL-PRF-19500/551E
TABLE II. Electrical characteristics. 1/
Col 1 Col 2 Col 3 Col 4
Col 5
Col 6
Col 7
Col 8
Col 9
Col 10
Col 11
V
I
V
I
V
C
at
I
V
(I )
RM
-V at
C
αV
(BR)1 (BR)
at
RWM
D
PP
(BR)2
Minimum at Maximum
dc current
(BR)
at
t = 1 ms
p
V
I
for
I
BR
I
RWM
PP
A(pk) = in
accordance with
column 7 inverse
polarity
(BR)
t
= 20 µs
t = 8 µs
= 1 ms
t
T =
p
p
t
= 1 ms
A
T
=
p
A
t = 10 µs
r
r
+ 25°C
- 55°C
V dc mA dc V (pk)
V (pk)
9.0
A (pk)
315
A (pk)
56
V dc
5.4
mA
V(pk)
-3.5
µA dc
%/°C
-0.03,
+0.045
1N6461 5.6
25
5
3,000
367
1N6462 6.5
1N6463 13.6
1N6464 16.4
20
5
6
2,500
500
11.0
22.6
26.5
258
125
107
46
22
19
+0.060
+0.085
+0.085
6.2
304
139
63
-3.2
-3.8
-3.8
12
15
13.0
15.6
5
500
1N6465 27.0
1N6466 33.0
1N6467 43.7
1N6468 54.0
2
1
1
1
24
50
3
41.4
47.5
63.5
78.5
69
63
45
35
12
11
8
+0.096
+0.098
+0.101
+0.103
25.1
30.2
40.0
48.5
39
34
46
20
-3.6
-3.6
-3.5
-3.4
30.5
40.3
51.6
2
2
6
1/ These limits apply to the US and URS device types also.
11
MIL-PRF-19500/551E
* TABLE III. Group E inspection (all quality levels) for qualification only.
MIL-STD-750
Inspection
Sampling plan
Method
Conditions
45 devices,
c = 0
Subgroup 1
Temperature cycling
1051
500 cycles, condition C, -55°C to +175°C
See table I, subgroup 2
Electrical measurements
Subgroup 2
22 devices,
c = 0
1,000 hours. See 4.3.1
See table I, subgroup 2
Life test
1048
Electrical measurements
Subgroups 3, 4 and 5
Not applicable
Subgroup 7
3 devices,
c = 0
*
Soldering heat
Subgroup 8
2031
See 4.5.2. I
shall be characterized by the supplier
Peak pulse current
PP
and this data shall be available to the Government.
Test shall be performed on each low and high voltage
device for each structurally identical grouping. Test to
failure.
Electrical measurements
Subgroup 9
See table I, subgroup 2
Resistance to glass
cracking.
1057
Condition B
12
MIL-PRF-19500/551E
FIGURE 4. Derating curve.
13
MIL-PRF-19500/551E
FIGURE 5. Peak pulse power versus pulse time.
14
MIL-PRF-19500/551E
FIGURE 6. Current impulse waveform.
FIGURE 7. Current impulse waveform.
15
MIL-PRF-19500/551E
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Lead finish (see 3.4.2).
c. Packaging requirements (see 5.1).
d. Product assurance level and type designator.
e. Destructive physical analysis when requested.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.daps.dla.mil .
16
MIL-PRF-19500/551E
6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2011-048)
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.daps.dla.mil .
17
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