JANTXVIN6631US [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 1.15A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN;
| 型号： | JANTXVIN6631US |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1.15A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN 超快恢复二极管 快速恢复二极管 |
| 文件： | 总4页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6626US thru 1N6631US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6626 thru 1N6631). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Surface mount series equivalent to the JEDEC registered
1N6626 to 1N6631 series
•
•
•
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
•
•
•
•
•
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
•
•
•
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
Controlled avalanche with peak reverse power
capability
•
•
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6626US, MSP6629US, etc.
•
Inherently radiation hard as described in Microsemi
MicroNote 050
Axial-leaded equivalents also available (see separate data
sheet for 1N6626 thru 1N6631)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Junction Temperature: -65oC to +175oC
Storage Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
Peak Forward Surge Current @ 25oC: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
Average Rectified Forward Current (IO) at TEC = +110oC:
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous
inventory had solid Silver end caps with
Tin/Lead finish.
•
•
•
•
•
•
•
MARKING: Cathode band only
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
1N6626US thru 1N6628US
1N6629US thru 1N6631US
4.0 A
2.8 A
(Derate linearly at 1.5%/oC for TEC > +110oC)
Average Rectified Forward Current (IO) at TA=25oC:
See package dimensions and recommended
pad layout on last page
1N6626US thru 1N6628US
1N6629US thru 1N6631US
1.55 A
1.15 A
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO rating
is for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where TJ(max) is
not exceeded. See latest issue of MIL-PRF-19500/590)
•
•
•
Thermal Resistance junction to endcap (RθJEC): 10oC/W
Capacitance at VR= 10 V: 40 pF
Solder temperature: 260oC for 10 s (maximum)
Copyright © 2007
6-07-2007 REV D
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626US thru 1N6631US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC
TYPE
MINIMUM
BREAK-
DOWN
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
MAXIMUM
REVERSE
CURRENT IR
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
PEAK
RECOVERY RECOVERY
CURRENT VOLTAGE
RM (rec)
FORWARD
NUMBER
REVERSE
VOLTAGE
VRWM
@
VOLTAGE
I
VF @ IF
VFRM Max
VRWM
VR
I
F = 2 A,
I
F = 0.5 A
TA=25oC
TA=150oC
IR = 50 μA
100 A/μs
Note 2
t
t
rr
rr
t = 12 ns
r
Note 1
Note 2
V
V @ A
V @ A
V
ns
30
30
30
50
50
60
ns
45
45
45
60
60
80
A
V
8
8
μA
2.0
2.0
2.0
2.0
2.0
4.0
μA
500
500
500
500
500
600
1N6626US
1N6627US
1N6628US
1N6629US
1N6630US
1N6631US
220
440
660
880
990
1100
1.35V @ 1.2A 1.50V @ 4.0A
1.35V @ 1.2A 1.50V @ 4.0A
1.35V @ 1.2A 1.50V @ 4.0A
1.40V @ 1.0A 1.70V @ 3.0A
1.40V @ 1.0A 1.70V @ 3.0A
1.60V @ 1.0A 1.95V @ 2.0A
200
400
600
800
900
1000
3.5
3.5
3.5
4.2
4.2
5.0
8
12
12
20
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
VRWM
VF
IR
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
trr
CHARTS AND GRAPHS
FIGURE 1
Typical Forward Current
vs
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Forward Voltage
Copyright © 2007
6-07-2007 REV D
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626US thru 1N6631US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
FIGURE 3
FIGURE 4
Typical Reverse Current vs.
Applied Reverse Voltage
Typical Reverse Current vs.
Applied Reverse Voltage
10ms
FIGURE 5
FIGURE 6
Forward Pulse Current vs.
Pulse Duration
Reverse Pulse Power vs.
Pulse Duration
Copyright © 2007
6-07-2007 REV D
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626US thru 1N6631US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
been identified as “D-5B”
PAD LAYOUT
INCHES
0.288
mm
7.32
1.78
A
B
INCHES
mm
0.070
MIN
MAX
.225
.148
MIN
5.21
3.48
MAX
5.72
3.76
C
0.155
3.94
BL
BD
ECT
S
.205
.137
.019
.003
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
.028
---
0.48
0.08
0.711
---
Copyright © 2007
6-07-2007 REV D
Microsemi
Page 4
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号：
JANTXVLL3595A
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
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