LCV01-6E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 2 Element, Silicon, SO-16;
| 型号： | LCV01-6E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 2 Element, Silicon, SO-16 局域网 光电二极管 |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LCV01-6
Bidirectional TVS Array ™
S C O T T S D A L E D I V I S I O N
TVSARRAY™
DESCRIPTION
This 16 pin one-line pair, bi-directional, LOW CAPACITANCE array is designed for
use in applications where protection is required at the board level. It provides
protection from voltage transients caused by electrostatic discharge (ESD) as
defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and
effects of secondary lightning as stated by IEC 61000-4-5.
These TRANSIENT VOLTAGE SUPPRESSOR (TVS) arrays have a peak pulse
power rating of 1500 watts for a 10/1000 msec pulse and are designed to be used for
secondary surge protection on high-speed telecommunications lines. This device
can be used in either common or differential mode applications. It is typically used
between Tip and Ring. Applications include T1/E1 and DSL interfaces in base
stations, routers, and long-haul transient immunity requirement per Bellcore 1089,
FCC Part 68 (type A and B surges and IEC 61000-4-5
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
·
·
·
·
·
1500 watts peak pulse power
Protects one-line pair
Provides electrically isolated protection
SO-16W package
·
·
·
·
T1/E1 line cards
Base stations
WAN interfaces
XDSL interfaces
UL 94V-0 flamability classification
·
CSU/DSU equipment
·
LOW CAPACITANCE 90 pF per line pair
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
·
Operating temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
Peak pulse power: 1500 watts (10/1000 µs, Fig 1)
Pulse repetition rate: < .01%
·
·
·
Molded SO-16W Surface Mount
Weight 0.25 grams (approximate)
Marking: Logo, device marking code, date code
·
·
·
·
·
·
·
Pin #1 defined by dot on top of package
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
Thermal resistance:< 30°C/watt (junction-to-case)
·
Lead soldering temperature: 260°C, 10s maximum
·
Carrier tubes; 45 pcs (STANDARD)
ELECTRICAL CHARACTERISTICS PER LINE PAIR @ 25°C Unless otherwise specified
STAND OFF
VOLTAGE
VWM
BREAKDOWN
VOLTAGE
VBR
CLAMPING
VOLTAGE
VC
@ 100 Amp
(Figure 2)
VOLTS
CLAMPING
VOLTAGE
VC
@ 200 Amp
(Figure 3)
VOLTS
STANDBY
CURRENT
ID
CAPACITANCE
(f=1 MHz)
C
@0V
PART
NUMBER
DEVICE
MARKING
@1 mA
@ VWM
VOLTS
MAX
6.0
VOLTS
MIN
µA
MAX
25
pF
TYP
90
MAX
15
MAX
21
LCV01-6
LCV01-6
8.0
Note: Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product selected
voltage should be equal to or greater than the continuous peak operating voltage of the circuit to be protected.
Copyright ã 2003
5-30 2003 REV A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
LCV01-6
Bidirectional TVS Array ™
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VWM
Definition
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time, td.
VBR
VC
ID
C
Standby Current: Leakage current at VWM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
OUTLINE AND CIRCUIT
100
100
50
100
50
0
10/1000µs 1500W Pulse
Peak Value -- Ipp
10/1000 Waveform
Peak Value -- Ipp
10/160 Waveform
10
Ipp
2
Ipp
2
Half -Value --
Half-Value --
1.0
.10
0
0
500
1000
1500
0
200
300
100
t
t
r
r
t
t
d
d
10ms
100ms
100ns
1µs
10µs
1ms
t -- Time in microseconds
t -- Time in microseconds
Figure 1
Peak Pulse Power Vs Pulse Time t = sec
Figure 2
Pulse Wave Form
Figure 3
Pulse Wave Form
DIMENSIONS AND SCHEMATIC
.08/.10
2.1/2.6
.25/.27
6.6/6.8
.45/.48_
11.6/11.8
A
B
D
P
.02/.03
.60/.80
.05 (nom)
1.27 (nom)
G
L
J
C
PAD LAYOUT
K
F
INCHES
MILLIMETERS
1
2
3
16
15
14
DIM
A
MIN
MAX
0.413
0.299
0.104
0.020
0.050
MIN
10.08
7.39
MAX
10.49
7.60
0.397
0.291
0.081
0.013
0.016
B
C
2.06
2.64
4
13
D
0.33
0.51
F
0.41
1.27
5
6
12
11
G
0.050 BSC
1.27 BSC
J
0.009
0.001
0.012
0.004
0.23
0.03
0.30
0.10
7
8
10
9
K
L
P
0.344
0.394
0.387
0.419
7.47
9.79
10.01
10.64
SCHEMATIC
Copyright ã 2003
5-30 2003 REV A
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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