LL483BE3 [MICROSEMI]
Rectifier Diode, 1 Element, 0.15A, 150V V(RRM), Silicon,;
| 型号： | LL483BE3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.15A, 150V V(RRM), Silicon, |
| 文件： | 总1页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FEATURES
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1N483BUR
SWITCHING DIODE
METALLURGICALLY BONDED
HERMETICALLY SEALED
DOUBLE PLUG CONSTRUCTION
ALSO AVAILABLE AS LL483B, CDLL483B
1N483BUR
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
-65°C to +175°C
-65°C to +175°C
2A
500mW
3mW/°C
200mA
1.2mA/°C above TA= +25°C
Surge Current, sine, 8.3mS:
Total Power Dissipation, 25°C:
Power Derating Factor, 25°C:
Max. Operating Current, 25°C:
Derating Factor:
Max. Operating Current, 150°C:
Derating Factor:
D.C. Reverse Voltage (VRWM):
50mA
1.0mA/°C above TA= +150°C
225V
DESIGN DATA
DC ELECTRICAL CHARACTERISTICS
VF
IR
Case: Hermetically sealed glass package
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
Ambient
(°C)
Ambient
(°C)
IF
mA
Min
V
Max
V
Min
µA
Max
µA
V (dc)
25
100
0.8
1.0
25
25
225
250
-
-
0.025
100
Marking: Blue body coat
Polarity: Cathode end is banded.
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