LX5501A-ISE [MICROSEMI]
暂无描述;
| 型号： | LX5501A-ISE |
| 厂家： | 
Microsemi |
| 描述： | 暂无描述 |
| 文件： | 总7页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LX5501A
®
InGAP HBT Gain Block
TM
P
RODUCTION DATA SHEET
KEY FEATURES
DESCRIPTION
Advanced InGaP HBT
DC to 6 GHz Operation
Single Supply
Low Idle Current (10 - 35 mA)
Small Signal Gain ~ 11 dB at 6
GHz
This general-purpose amplifier is a
Designed as an easily cascadable 50-
low cost, broadband RFIC manu- ohm internally matched gain block, the
factured with an InGaP/GaAs Hetero- LX5501A can be used for IF and RF
junction Bipolar Transistor (HBT) amplification in wireless / wired voice
process (MOCVD).
and data communication products as
well as in broadband test equipment
operating up to 6 GHz.
P1dB ~ 11 dBm at 6 GHz
SOT-23 Package
The amplifier is available in a plastic
5-lead SOT-23 package.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPLICATIONS
PA driver for WLAN and
Cordless Phones.
VCO buffer.
Low Current, High Gain
Cascaded Amplifiers.
PRODUCT HIGHLIGHT
C4
C3
L1
•
•
•
Fully characterized for 5v operation (with external
bias resistor).
Input and output matched to 50 ohms for ease of
cascading.
Cascaded gain blocks can be individually biased
for the lowest supply current.
VCC
Rext
C2
C1
3
1
5
OUT
LX5501A
IN
4
2
PACKAGE ORDER INFO
Plastic SOT-23
5 pin
SE
TA(°C)
RoHS Compliant / Pb-free
Transition DC: 0503
LX5501ASE
-40 to +85°C
Note: Available in Tape & Reel. Append the letters “TR” to the part
number. (i.e. LX5501ASE-TR)
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Page 1
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
LX5501A
®
InGAP HBT Gain Block
TM
P
RODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
DC Supply Voltage............................................................................................6V
Collector Current ........................................................................................100mA
RF Input Power...........................................................................................10dBm
Operating Temperature Range...........................................................-40 to +85°C
Storage Temperature Range...........................................................-65°C to 150°C
Peak Package Solder Reflow Temp. (40 second max. exposure) ... 260°C (+0, -5)
RF Output
/ VCC
1
2
3
5
GND
GND
4
GND
RF Input
SE PACKAGE
(Top View)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Pin No.
Description
1
2
3
4
5
Ground
Ground
RF Input
Ground
RF Output/VCC Supply
RECOMMENDED OPERATING CONDITIONS
LX5501A
Typ
Parameter
Symbol
Units
Min
Max
`
Supply Voltage (with appropriate external resistor)
Quiescent Current (No RF input)
VCC
Icq
3.5
10
6
40
V
mA
ELECTRICAL CHARACTERISTICS
Conditions: +25°C, 5V supply voltage.
LX5501A
Typ
Parameter
Symbol
Test Conditions
Units
Min
Max
GENERAL SPECIFICATIONS (FIG 1. TEST CIRCUIT)
`
Small Signal Gain
P1dB Compression
Input Return Loss
Output Return Loss
Isolation
S21
P1dB
S11
S22
S12
Frequency = 5.8 GHz
Frequency = 5.8 GHz
Frequency = 2.4-6 GHz
Frequency = 2.4-6 GHz
Frequency = 2.4-6 GHz
Frequency = 5.8 GHz, Pout = 10 dBm
11.4
11.5
-10
-10
-20
-30
30
dB
dBm
dB
dB
dB
Harmonics
Quiescent Current
dBC
mA
Icq
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Page 2
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
LX5501A
®
InGAP HBT Gain Block
TM
P
RODUCTION DATA SHEET
FIGURE 1: TEST CIRCUIT FOR 1 TO 6 GHZ
C4
C3
L1
VCC
Rext
C2
C1
3
1
5
4
OUT
LX5501A
IN
2
Component
C1,C2
C3
Value
10pF
10pf
0.1uF
3.3nH
Comment
DC block (0402)
RF decoupling (0402)
LF decoupling (0402)
RF choke (0402)
C4
L1
REXT
50 ohms Bias setting resistor (0402)
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Page 3
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
LX5501A
®
InGAP HBT Gain Block
TM
P
RODUCTION DATA SHEET
APPLICATION NOTE
Supply voltages other than 5v may be accommodated by
adjusting the value of the external resistor to produce the
same quiescent current as the 5v case. To calculate the
resistor required for a different supply voltage use the
following formula:
D
ESIGN CONSIDERATIONS
The gain block is self-biased by the voltage that is present
on pin 5 (VBIAS). Chart 1 shows the quiescent current vs. bias
voltage characteristic. Chart 2 shows device characteristics
when operated with a 5v supply and with different values of
external resistor. Using Chart 2 it is possible to trade-off Gain
and P1dB compression point for supply current.
REXT (V1)=REXT (5V)• (V1-VBIAS ) (5-VBIAS
)
Where VBIAS is the Pin 5 bias voltage obtained from
Chart 1and V1 is the desired supply voltage.
TYPCAL QUIESCENT CURRENT VS. PIN 5
TYPCAL P1DB, GAIN AND IC VS. RE X T @ 25° C
BIAS VOLTAGE @ 25° C
70
60
50
40
30
14
12
10
8
35
30
25
20
15
10
5
6
Gain
Ic
20
4
Icq
P1dB
10
0
2
0
0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
25
75
125
175
Pin 5 Bias Voltage - Volts
Rext - ohms
Frequency = 5.8GHz, VCC = 5V
TYPCAL 2. 4 GHZ CHARACTERISTICS @ 25° C
TYPCAL S-PARAMETRS @ 25° C
18
16
14
12
10
8
0
20
15
10
5
50
45
40
35
30
25
20
15
10
5
S21
-5
P1dB = 12.0
dBm
-10
-15
-20
-25
-30
S11
S22
S12
6
0
P1dB
Pout
Gain
Ic
4
-5
2
0
-10
0
2
3
4
5
6
-25
-20
-15
-10
Pin - dBm
-5
0
5
Frequency - GHz
VCC = 5V, REXT = 50Ω
VCC = 5V, REXT = 50Ω
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Page 4
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
LX5501A
®
InGAP HBT Gain Block
TM
P
RODUCTION DATA SHEET
TYPCAL 5. 8 GHZ CHARACTERISTICS @ 25° C
TYPICAL SUPPLY CURRENT VARIATION
OVER –40 TO +85° C AMBIENT
45
40
35
30
25
20
15
15
10
5
50
45
40
35
30
25
20
15
10
5
P1dB = 11.5
dBm
0
-40 deg C
+25 deg C
+85 deg C
10
5
-5
P1dB
Pout
Gain
Ic
0
-10
-15
-20
-15
-10
-5
0
5
10
15
Pin - dBm
0
-25
-20
-15
-10
-5
0
5
Frequency = 5.8GHz, VCC = 5V. REXT = 50Ω
Pin - dBm
VCC = 5V, REXT = 50Ω
TYPCAL GAIN VARIATION OVER –40 TO
TYPCAL P1DB VARIATION OVER –40 TO
+85° C AMBIENT
+85° C AMBIENT
14
12
10
8
12
10
8
6
6
4
4
-40 deg C
2
2
+25 deg C
P1dB
+85 deg C
0
0
-20
-15
-10
-5
0
5
10
15
-50
0
50
100
Ambient Temperature - deg C
Pin - dBm
Frequency = 5.8GHz, VCC = 5V, REXT = 50Ω
Frequency = 5.8GHz, VCC = 5V, REXT = 50Ω
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Page 5
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
LX5501A
®
InGAP HBT Gain Block
TM
P
RODUCTION DATA SHEET
PACKAGE DIMENSIONS
5 Pin Plastic SOT-23
SE
M
ILLIMETERS
I
NCHES
D
G
Dim
MIN
0.90
0.90
0.25
0.09
2.80
1.50
0.95 BSC
1.90 BSC
2.60
MAX
1.30
1.45
0.50
0.20
3.10
1.75
MIN
MAX
0.051
0.057
0.020
0.008
0.122
0.069
A
A1
B
C
D
E
F
G
H
I
0.035
0.035
0.010
0.004
0.110
0.059
0.038 BSC
0.075 BSC
0.102
H
E
3.00
0.55
0.15
0.118
0.022
0.006
0.35
0.00
0.014
0.000
A
A1
J
C
K
10° MAX
10° MAX
K
B
J
F
I
Note:
1. Dimensions do not include mold flash or protrusions;
these shall not exceed 0.155mm(.006”) on any side.
Lead dimension shall not include solder coverage.
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Page 6
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
LX5501A
®
InGAP HBT Gain Block
TM
P
RODUCTION DATA SHEET
NOTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright © 2004
Rev. 1.1, 2005-07-14
Microsemi
Page 7
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
相关型号：
LX5501A-ISETR
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, SE, SOT-23, 5 PIN
MICROSEMI
LX5501AISE
Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, ROHS COMPLIANT, PLASTIC, SE, SOT-23, 5 PIN
MICROSEMI
LX5501AISE-TR
Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, ROHS COMPLIANT, PLASTIC, SE, SOT-23, 5 PIN
MICROSEMI
LX5501ASE-TR
Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, 1 Func, BIPolar, ROHS COMPLIANT, PLASTIC, SOT-23, 5 PIN
MICROSEMI
LX5503-ILQ
Narrow Band Medium Power Amplifier, 5150MHz Min, 5350MHz Max, PLASTIC LQ, 16 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明