M1N5711 [MICROSEMI]
Rectifier Diode, Schottky, 1 Element, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | M1N5711 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Element, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 二极管 |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
SCHOTTKY BARRIER – LOW REVERSE LEAKAGE CHARACTERISTICS
DIODES
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/444
DEVICES
LEVELS
JAN
JANTX
1N5711-1
1N5712-1
1N6857-1
1N6858-1
*DSB2810
*DSB5712
*1N5711
JANTXV
* These devices are only available as Commercial Level Product.
*COMMERCIAL
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
Operating Current:
-65°C to +150°C
-65°C to +150°C
5711 types
2810, 5712 & 6858 types
6857 type
:33mA dc @ TL = +130°C, L = 3/8”
:75mA dc @ TL = +110°C, L = 3/8”
:75mA dc @ TL = +70°C, L = 3/8”
Derate to 0 (zero) mA @ +150°C
Derating:
all types:
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
MAXIMUM
CAPACITANCE @
MINIMUM
BEAKDOWN
VOLTAAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
ESDS
CLASS
TYPE
NUMBER
VR = 0 VOLTS
f = 1.0MHz
VF @ 1mA
VOLTS
0.41
VF @ IF
MILLIAMPS
1.0 @ 35
IR @ VR
CT
VBR @ 10μA
VOLTS
nA
VOLTS
15
PICO FARADS
DO-35
DSB2810
1N5711, -1
DSB5712
1N5712-1
1N6857-1
1N6858-1
20
70
20
20
20
70
100
200
150
150
150
200
2.0
2.0
2.0
2.0
4.5
4.5
1
1
1
1
2
2
0.41
1.0 @ 15
50
0.41
1.0 @ 35
16
0.41
1.0 @ 35
16
0.35
0.75 @ 35
0.65 @ 15
16
0.36
50
LDS-0040 Rev. 2 (101097)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
GRAPHS
FIGURE 2
FIGURE 1
I – V Curve Showing Typical Forward Voltage Variation with
Temperature for the DSB5712 and DSB2810 Schottky Diodes.
DSB5712 and DSB2810 Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various Temperatures
FIGURE 3
FIGURE 4
I – V Curve Showing Typical Forward Voltage Variation with
Temperature for Schottky Diode 1N5711.
1N5711 Typical; Variation of Reverse Current (IR); vs.
ReverseVoltage (VR) at Various Temperatures.
FIGURE 5
Typical Dynamic
Resistance (RD) vs. Forward Current
Current (IF)
LDS-0040 Rev. 2 (101097)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
NOTE:
Dimensions
1. Dimensions are in inches. Millimeters are given for general
information only.
2. Dimensions BL and LD include all components of the diode
periphery except the sections of the leads over which the diameter is
controlled.
Symbol
Inches
Millimeters
Notes
Min
Max
.076
.170
.022
Min
1.73
3.18
0.36
Max
1.93
4.32
0.56
BD
BL
LD
LL
.068
.125
.014
2, 3
2
3. Dimension BD shall be measured at the largest diameter.
1.000 1.500 25.40 38.10
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
5. Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds
FIGURE 1 Physical dimensions, (DO-35)
1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1
DESIGN DATA
Case: Hermetically sealed glass case per MIL-PRF-19500/444 and /445 DO-35 outline.
Lead Material: Copper clad steel.
Lead Finish: Tin / Lead
Thermal Resistance: (RθJEC): 250°C/W maximum at L = .375 inch
Thermal Impedance (ZθJX): (ZθJX): 40°C/W maximum.
Polarity: Cathode end is banded.
Mounting Position: Any.
LDS-0040 Rev. 2 (101097)
Page 3 of 3
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