MAELCR80E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN;
| 型号： | MAELCR80E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN 局域网 二极管 |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ELCR80, e3
LOW CAPACITANCE RECTIFIER
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The ELCR80 low capacitance rectifier is used in parallel with a low-capacitance
transient voltage suppressor (TVS) such as the LCE6.5-170A series for
unidirectional applications as shown in Figure 4. It is rated for 100 Amp
forward surges to compliment this 1500 Watt TVS series and also provide a
low capacitance and a low forward (VF) voltage with fast response time. The
low capacitance rating of 100 pF when used in parallel to the LCE6.5-170A
series will result in a total capacitance of 200 pF or less at zero volts for
protecting higher frequency applications from inductive switching threats or
electrical systems involving secondary lightning effects per IEC61000-4-5 as
well as RTCA/DO-160D or ARINC 429 for airborne avionics. With their fast
response time, they also provide ESD and EFT protection per IEC61000-4-2
T-18
and IEC61000-4-4 respectively.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
Suppresses transient in forward direction up to 1500
Watts Peak Pulse Power @ 10/1000 µs
•
Low-capacitance Rectifier to compliment the low
capacitance TVS series for unidirectional
applications
Economical small plastic surface mount with robust
axial subassembly package
•
•
•
Improved protection of low capacitance TVS
Optional 100% screening for avionics grade is
available by adding MA prefix to part number for
added 100% temperature cycle -55oC to +125oC
(10X) as well as surge (3X) and 24 hours HTRB with
post test VZ & IR
Low Capacitance for data-line protection to 1 MHz
Protection for aircraft fast data rate lines per select
level waveforms in RTCA/DO-160D & ARINC 429
with bit rates of 100 kb/s (per ARINC 429, Part 1,
par. 2.4.1.1)
•
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, or MSP prefixes
respectively to part number, e.g. MXELCR80,
MVELCR80, etc.
•
•
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance in the forward
direction for Class 1, 2, 3, and 4
•
•
Also available in surface mount package with part
number HSMBJLCR80 (see separate data sheet)
•
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance in the forward
direction for Class 1, 2, and 3
RoHS Compliant devices available by adding “e3” suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
CASE: Void Free Transfer Molded Thermosetting Plastic
epoxy body meeting UL94V-0
•
•
•
•
Forward Peak Pulse Current at 25oC: 100 Amps @ 10/1000
•
•
μs with repetition rate of 0.01% or less*
Steady State Power Dissipation: 5 Watts at TL = 25oC 3/8
inch from body
FINISH: Tin-Lead or RoHS Compliant annealed matte-Tin
plating readily solderable per MIL-SD-750, method 2026
•
•
•
POLARITY: Cathode Marked with Band
MARKING: Part number ELCR80 or ELCRe3
WEIGHT: 0.7 Grams (Approx.)
Clamping Speed (0 volts to V(BR) Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65oC to +150oC
ELECTRICAL CHARACTERISTICS @ 25oC
WORKING
PEAK
REVERSE
BREAKDOWN
VOLTAGE
@ I(BR) 1.0mA
V(BR)
REVERSE
CURRENT
@VRWM
IR
MAXIMUM
MAXIMUM
MAXIMUM
MICROSEMI
PART NUMBER
FORWARD PEAK PULSE CAPACITANCE
VOLTAGE
@ IPP
REVERSE
VOLTAGE
CURRENT*
RATING
IPP
@ 0 Volts
VF
VRWM
μA
Volts
Min.
220
Volts
7.0
Amps
100
Volts
200
pF
100
ELCR80
10
ELCR80e3
*See Figure 3
Copyright © 2005
9-12-2005 REV 0
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
ELCR80, e3
LOW CAPACITANCE RECTIFIER
S C O T T S D A L E D I V I S I O N
GRAPHS
Peak Power
(Single Pulse)
Average
Power
TL – Lead Temperature – oC
t – Time – ms
FIGURE 2
FIGURE 3
SCHEMATIC APPLICATIONS
A typical low capacitance TVS device configuration is shown in Figure 4 when used with a separate rectifier to maintain low capacitance. As
shown, an additional low capacitance rectifier diode is used in parallel in the same polarity direction as the TVS. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode within the TVS and
also provide a low voltage conducting direction. This added rectifier diode such as the ELCR80 is of similar low capacitance as the TVS and also
has a higher reverse voltage rating than the TVS clamping voltage VC. The unidirectional configuration in Figure 4 will result in twice the
capacitance of the LCE6.5 – 170A series of low capacitance TVSs that are rated at 100 pF maximum. This results in a total of 200 pF maximum
in this parallel configuration since the ELCR80 is also the same capacitance value of 100 pF maximum.
PACKAGE
DIMENSIONS
ELCR80
Low Capacitance
Rectifier
LCExxx
(low capacitance TVS)
FIGURE 4
Unidirectional configuration of
Low Capacitance TVS (such as
the LCE6.5-170A series) and
a separate ELCR80 rectifier
in parallel)
Copyright © 2005
Microsemi
Page 2
9-12-2005 REV 0
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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