MAHSMBJSAC75E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 500W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | MAHSMBJSAC75E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 500W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件： | 总3页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HSMBJSAC5.0 thru HSMBJSAC75, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The HSMBJSAC transient voltage suppressor (TVS) series rated at 500
Watts provides an added rectifier element as shown in Figure 4 to achieve
low capacitance in applications for data or signal lines. The low capacitance
rating of less than 30 pF may be used for protecting higher frequency
applications in inductive switching environments or electrical systems
involving secondary lightning effects per IEC61000-4-5 as well as
RTCA/DO-160D or ARINC 429 for airborne avionics. If bidirectional
protection is needed, two HSMBJSAC devices in anti-parallel configuration
are required as shown in Figure 6. With their very fast response time, they
also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4
DO-214AA
See package notes
respectively.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
Unidirectional low-capacitance TVS series (for
bidirectional see Figure 6)
•
•
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select
waveforms in RTCA/DO-160D (see MicroNote 130
for Waveform 4 and 5A capability) & ARINC 429
with bit rates of 100 kb/s (per ARINC 429, Part 1,
par. 2.4.1.1)
Suppresses transient up to 500 Watts Peak Pulse
Power @ 10/1000 µs
•
•
Improved performance in low capacitance of 30 pF
Economical small plastic surface mount with robust axial
subassembly package
•
•
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
•
Optional 100% screening for avionics grade is
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
available by adding MA prefix to part number for added
100% temperature cycle -55oC to +125oC (10X) as well
as surge (3X) and 24 hours HTRB with post test VZ & IR
Class 1: HSMBJSAC5.0 to HSMBJSAC75
Class 2: HSMBJSAC5.0 to HSMBJSAC45
Class 3: HSMBJSAC5.0 to HSMBJSAC22
Class 4: HSMBJSAC5.0 to HSMBJSAC10
•
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are also available
by adding MQ, MX, or MV prefixes respectively to part
number, e.g. MXHSMBJSAC5.0, MVHSMBJSAC18, etc.
•
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance
Class 1: HSMBJSAC5.0 to HSMBJSAC26
Class 2: HSMBJSAC5.0 to HSMBJSAC15
Class 3: HSMBJSAC5.0 to HSMBJSAC7.0
•
•
•
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Also available in axial-leaded packages with part
numbers (SAC5.0 thru SAC50)
RoHS Compliant devices available by adding “e3” suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Peak Pulse Power Dissipation at 25oC: 500 Watts @
•
•
CASE: Void Free Transfer Molded Thermosetting
Plastic package meeting UL94V-0
10/1000 μs with repetition rate of 0.01% or less*
Steady State Power Dissipation*: 2.5 Watts @ TL
FINISH: Tin-Lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
=+75oC
•
•
POLARITY: Cathode (TVS) Marked with Band
Clamping Speed (0 volts to V(BR) Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65oC to +150oC
Solder temperatures: 260oC for 10 s maximum
MARKING: Part number without HSMBJ prefix (ie.
SAC5.0, SAC5.0e3, etc)
•
•
•
•
WEIGHT: 0.1 Grams (Approx.)
See package dimensions on last page
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients
that briefly drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 5 and 6 for further
protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively.
Microsemi
Page 1
Copyright © 2007
10-20-2007 REV H
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
HSMBJSAC5.0 thru HSMBJSAC75, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC
REVERSE
STAND-OFF
VOLTAGE
(Note 1)
BREAKDOWN
VOLTAGE
MAXIMUM MAXIMUM
MAXIMUM
MAXIMUM
WORKING
INVERSE
BLOCKING
VOLTAGE
VWIB
INVERSE
BLOCKING
LEAKAGE
CURRENT
PEAK
INVERSE
BLOCKING
VOLTAGE
VPIB
MICROSEMI
STANDBY CLAMPING PEAK PULSE CAPACITANCE
PART NUMBER
CURRENT VOLTAGE
CURRENT*
RATING
IPP
@ O Volts,
f=1 MHz
@ I(BR) 1.0mA
@VWM
ID
I
P = 5.0A*
VC
V(BR)
VWM
I
IB @ VWIB
Volts
Min.
7.60
7.90
8.33
pF
Volts
Amps
Volts
Volts
μA
Volts
10.0
11.2
12.6
13.4
14.0
16.3
19.0
23.6
28.8
35.4
42.3
60.0
77.0
88.0
121
μA
300
300
300
100
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
HSMBJSAC5.0
HSMBJSAC6.0
HSMBJSAC7.0
HSMBJSAC8.0
HSMBJSAC8.5
HSMBJSAC10
HSMBJSAC12
HSMBJSAC15
HSMBJSAC18
HSMBJSAC22
HSMBJSAC26
HSMBJSAC36
HSMBJSAC45
HSMBJSAC50
HSMBJSAC75
5.0
6.0
7.0
8.0
8.5
10
12
15
18
22
26
36
45
50
75
44
41
38
36
34
29
25
20
15
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
8.89
9.44
11.10
13.30
16.70
20.00
24.40
28.90
40.0
50.00
55.50
83.3
14
11.1
8.6
6.8
5.8
4.1
*See Figure 3. For the HSMBJSAC75, the maximum clamping voltage VC is at the maximum rated Peak Pulse Current (IPP) of 4.1 Amps.
Clamping Factor: The ratio of the numerical value of VC to V(BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108.
Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), that should be equal to or greater than the dc or continuous
peak operating voltage level.
Note 2: When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
.
GRAPHS
tw – Pulse Width μs
FIGURE 1
Microsemi
Page 2
Copyright © 2007
10-20-2007 REV H
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
HSMBJSAC5.0 thru HSMBJSAC75, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
TL – Lead Temperature – oC
t – Time – msec
FIGURE 2
Lead Length = 3/8”
FIGURE 3
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage VC. The Microsemi recommended rectifier part number is the “HSMBJLCR60” for the application in Figure 5. If
using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including
the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5 and 6 will
both result in twice the capacitance of Figure 4.
PACKAGE
DIMENSIONS
FIGURE 4
FIGURE 5
TVS with internal Low
Capacitance Diode
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
DIMENSIONS
INCHES MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
B
C
D
E
F
.073
.160
.130
.205
.075
.030
.006
.087
.180
.155
.220
.130
.060
.016
1.85
4.06
3.30
5.21
1.91
.76
2.21
4.57
3.94
5.59
3.30
1.52
.41
G
.15
FIGURE 6 Optional Bidirectional
configuration (two TVS devices in
anti-parallel)
NOTE: Dimension E exceeds the
JEDEC outline in height as shown
Microsemi
Page 3
Copyright © 2007
10-20-2007 REV H
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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