MCE545 [MICROSEMI]
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, DIE;
| 型号： | MCE545 |
| 厂家： | 
Microsemi |
| 描述： | RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, DIE 放大器 晶体管 |
| 文件： | 总2页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCE545 WAFFLE PACK DIE
RF & MICROWAVE TRANSISTORS
R F P R O D U C T S D I V I S I O N
DESCRIPTION
KEY FEATURES
High FTau-1.4GHz
!
!
The MCE545 is a high breakdown, high gain, discrete PNP silicon
bipolar transistor, shipped in waffle pack.
High Breakdown
BVCEO = 70V
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Gold Back Metal
APPLICATIONS/BENEFITS
!
LNA, Oscillator
, Pre-Driver
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
70
Unit
Vdc
Vdc
Vdc
mA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
100
3.0
400
MCE545 DIE
A
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Test Conditions
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
70
-
-
-
Vdc
Collector-Base Breakdown Voltage
(IC= 100 µAdc, IE=0)
100
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
3.0
-
Vdc
µA
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
-
-
20
100
ICES
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
1.0
µA
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 6.0 Vdc)
15
-
-
DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 25 Vdc, f = 250 MHz)
fT
1000
1400
-
MHz
Copyright 2001
Microsemi
Page 1 of 2
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
MCE545 WAFFLE PACK DIE
RF & MICROWAVE TRANSISTORS
R F P R O D U C T S D I V I S I O N
DIMENSIONS
Emitter
Top Metal: Gold
Back Metal: Gold
Base
RF DIE SELECTOR GUIDE
PN
Closest Packaged Equivalent
TYPE CEO IC MAX
Ftau
NFmin
n/a
n/a
Small Signal Gain
14dB/200MHz
13.5dB/200MHz
12dB/400MHz
14dB/500MHz
MCE545
MCE544
MC1309
MC1333
MRF545
MRF544
MMBR5031LT1/2N5031
MRF581/MRF5812R1/BFR96
PNP 70V 400mA
NPN 70V 400mA
NPN 10V 20mA
NPN 18V 200mA
1.4GHz
1.4GHz
2GHz
n/a
5GHz
2.5dB/500MHz
PN
Closest Packaged Equivalent
SD1127/MRF237
MS1649/MRF630
MRF837/MRF8372
MRF559
TYPE CEO ICMAX
Pout
Gain
MC1012
MC1826
MC1343
MC1333
NPN 18V 640mA
4W/175MHz
3W/470MHz
0.75W/870MHz
0.5W/870MHz
12dB/175MHz
9.5dB/470MHz
8dB/870MHz
8dB/870MHz
NPN 16V
1A
NPN 16V 200mA
NPN 18V 200mA
Copyright 2001
Microsemi
Page 2 of 2
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
相关型号：
MCE545E3
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, DIE
MICROSEMI
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