MG1010-11 [MICROSEMI]
GUNN Diodes Cathode Heat Sink; 耿氏二极管阴极散热器
| 型号： | MG1010-11 |
| 厂家： | 
Microsemi |
| 描述： | GUNN Diodes Cathode Heat Sink |
| 文件： | 总4页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
Discrete Frequency: Cathode Heatsink
Features
●
CW Designs to 500 mW
●
Pulsed Designs to 10 W
●
Frequency Coverage Specified from 5.9–95 GHz
●
Low Phase Noise
●
High Reliability
Applications
●
Motion Detectors
Description
●
Transmitters and Receivers
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
●
Beacons
●
Automotive Collision Avoidance Radars
●
Radars
●
Radiometers
●
Instrumentation
Microsemi
Copyright 2008
Rev: 2009-01-19
Page 1
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
(Discrete Frequency: Cathode Heatsink)
C
Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Part
Number
F
r
Operating
Min.
(mA)
Max.
(mA)
Package
Outline3
Voltage (V)
MG1001-11
MG1002-11
MG1003-15
MG1004-15
5.9–8.2
5.9–8.2
5.9–8.2
5.9–8.2
50
12
12
12
12
200
400
600
M11
M11
M15
M15
100
250
500
300
600
1100
1300
900
X
Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Part
Number
F
r
Operating
Min.
(mA)
Max.
(mA)
Package
Outline3
Voltage (V)
MG1005-11
MG1006-11
MG1007-15
MG1008-15
8.2–12.0
8.2–12.0
8.2–12.0
8.2–12.0
50
10
10
10
10
200
400
400
700
M11
M11
M15
M15
100
250
500
700
1200
1600
1000
Ku Band Gunn Diodes (Specifications
@ 25°C)
Operating Current
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Part
Number
F
r
Operating
Min.
(mA)
Max.
(mA)
Package
Outline3
Voltage (V)
MG1009-11
MG1010-11
MG1011-15
MG1012-15
12.4–18.0
12.4–18.0
12.4–18.0
12.4–18.0
50
8
8
8
8
300
400
500
800
M11
M11
M15
M15
100
250
500
800
1200
1700
1100
K
Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Part
Number
F
r
Operating
Min.
(mA)
Max.
(mA)
Package
Outline3
Voltage (V)
MG1013-16
MG1014-16
MG1015-16
MG1016-17
18.0–26.5
18.0–26.5
18.0–26.5
18.0–23.0
50
6
6
6
6
400
500
800
900
600
M16
M16
M16
M17
100
200
400
1000
1400
1700
1 Microsemi Gunn diodes are specified to operate within
a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory
.
2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width
3 Polarity: anode is the cap and cathode is the heatsink.
= 1 µS, duty factor = 1% typ.
Microsemi
Copyright 2008
Rev: 2009-01-19
Page 2
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Ka Band Gunn Diodes (Specifications
@ 25°C)
Operating Current
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Part
Number
F
r
Operating
Min.
(mA)
Max.
(mA)
Package
Outline3
Voltage (V)
MG1017-16
MG1018-16
MG1019-16
MG1020-16
MG1039-16
MG1040-16
26.5–40.0
26.5–40.0
26.5–40.0
26.5–40.0
26.5–35.0
26.5–35.0
50
4.5
4.5
5.0
5.5
5.5
5.5
300
700
M16
M16
M16
M16
M16
M16
100
200
250
300
350
600
1100
1400
1600
1700
1800
800
800
1000
1000
U
V
Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Part
Number
F
r
Operating
Min.
(mA)
Max.
(mA)
Package
Outline3
Voltage (V)
MG1021-16
MG1022-16
MG1023-16
40.0–60.0
40.0–60.0
40.0–50.0
50
4
4
4
400
700
800
800
1200
1600
M16
M16
M16
100
150
and
W Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Part
Number
F
r
Operating
Min.
Max.
(mA)
Package
Outline3
Voltage (V)
(mA)
400
500
450
500
450
MG1036-16
MG1037-16
MG1024-16
MG1025-16
MG1038-16
60.5–85.0
60.5–85.0
85–95
10
50
10
20
50
4.5
5
900
M16
M16
M16
M16
M16
1100
1100
1000
1200
4.5
4.5
5
85–95
85–95
High Power Pulsed Gunn Diodes (Specifications
@ 25°C)
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Typ.
Part
Number
F
r
Operating
Operating Current
(Amps.)
Package
Outline3
Voltage (V)
MG1034-15
9.3
5
35
8
M15
Stacked Pulsed Gunn Diodes (Specifications
Operating
@ 25°C)
Min.
Power2
(Watts)
Typ.
T
yp.
Part
Number
F
r
equency1
(GHz)
Operating
Operating Current
(Amps)
6
Number
of Stacks
Package
Outline3
Voltage (V)
MG1060-15
9.3
10
70
2
M15
1 Microsemi Gunn diodes are specified to operate within
a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory
.
2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width
3 Polarity: anode is the cap and cathode is the heatsink.
= 1 µS, duty factor = 1% typ.
Microsemi
Copyright 2008
Rev: 2009-01-19
Page 3
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
Cathode Heat Sink
®
TM
MG1001 – MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
T
ypical Characteristics
1.0
0.8
0.6
0.4
0.2
300
-50°C
250
200
150
100
0
90°C
0
0
1
2
3
2
4
6
8
10
12
VBias
Bias Voltage (V)
Ratio
V
Threshold
Power Output vs. Bias Voltage
I
Bias Ratio vs. VBias Ratio
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These products are supplied with a RoHS
complaint Gold finish
.
These devices are ESD sensitive and must be handled using ESD precautions.
Microsemi
Copyright 2008
Rev: 2009-01-19
Page 4
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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