MM118-06F [MICROSEMI]

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE; 3相N沟道绝缘栅双极晶体管IGBT桥
MM118-06F
型号: MM118-06F
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
3相N沟道绝缘栅双极晶体管IGBT桥

晶体 晶体管 开关 功率控制 双极性晶体管 栅 局域网
文件: 总3页 (文件大小:120K)
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MM118-06FT

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM118-06FT

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM118-06L

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

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31 MICROSEMI

MM118-06L

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM118-06T

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM1181

Low-Noise, Low-Satulation Three-Pin Regulator

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24 MITSUMI

MM1181

Low-Noise, Low-Satulation Three-Pin Regulator

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14 MITSUMI

MM118-12

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

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21 MICROSEMI

MM118-12

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM118-12FT

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM118-12L

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM118-12T

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED, POWER MODULE-16

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0 MICROSEMI

MM1186

Video Amplifier Monolithic IC

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29 MITSUMI

MM1188

3-Input 1-Output Video Switch (with Y-C mix)

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11 MITSUMI

MM1188

3-Input 1-Output Video Switch (with Y-C mix)

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40 MITSUMI