MM121-30T [MICROSEMI]
Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, POWER MODULE-16;
| 型号： | MM121-30T |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, POWER MODULE-16 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MM121-XX
SERIES
Features
·
·
Compact and rugged construction offering weight and space savings
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “ T” suffix to part number, see option below)
HPM (Hermetic Power Module)
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
Additional voltage ratings or terminations available upon request
MIL-PRF-19500 screening available upon request
70/100/200/300/
500 Volts
·
·
·
·
75 - 200 Amps
3 PHASE N-CHANNEL
POWER MOSFET
BRIDGE
·
·
Maximum Ratings per switch @ 25°C (unless otherwise specified)
PART NUMBER
MM121-07 MM121-10
MM121-20
MM121-30
MM121-50
500 V
Drain-to-Source Breakdown Voltage
(Gate shorted to Emitter), @ Tj³ 25°C
Drain-to-Gate Breakdown Voltage
@ Tj³ 25°C, RGS=1MW
BVDSS
BVDGR
70 V
70 V
100 V
100 V
200 V
300 V
200 V
300 V
500 V
Gate-to-Source Voltage, continuous
transient
Continuous Drain Current @ Tj= 25°C,
Tj= 100°C
VGS
VGSM
ID25
ID100
IDM
+/- 20 V
+/- 30 V
76 A
+/- 20 V
+/- 30 V
75 A
+/- 20 V
+/- 30 V
50 A
+/- 20 V
+/- 30 V
40 A
+/- 20 V
+/- 30 V
24 A
60 A
60 A
40 A
30 A
20 A
Peak Drain Current, pulsewidth limited by T
300 A
300 A
200 A
160 A
96 A
j max,
Power Dissipation
Thermal resistance,
(junction-to-base)
PD
300 W
300 W
300 W
300 W
300 W
per switch
per module
RQjc, 0.25°C/W 0.25°C/W 0.25°C/W 0.25°C/W 0.25°C/W
.06°C/W .06°C/W 0.06°C/W
0.06°C/W 0.06°C/W
Mechanical Outline
Datasheet# MSC0337A
MM-XX SERIES
Maximum Ratings @ 25°C (unless otherwise specified) - continued
PART NUMBER
MM121-07 MM121-10
MM121-20
MM121-30
MM121-50
Repetitive Avalanche Current
Repetitive Avalanche Energy
IAR
EAR
EAS
IS
ISM
TJ
100 A
30 mJ
2 J
75 A
30 mJ
tbd
50 A
30 mJ
tbd
40 A
30 mJ
tbd
24 A
30 mJ
tbd
24 A
96 A
-55°C to
150°C
Single Pulse Avalanche Energy
Continuous Source Current (body diode)
Pulse Source Current (body diode)
Junction Temperature Range
Storage Temperature Range
76 A
75 A
50 A
40 A
300 A
-55°C to
150°C
300 A
-55°C to
150°C
200 A
-55°C to
150°C
160 A
-55°C to
150°C
Tstg
Electrical Parameters, per switch @ 25°C (unless otherwise specified)
SYMBOL
PART
MIN
TYP.
MAX
UNIT
DESCRIPTION
CONDITIONS
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
BVDSS
VGS = 0 V, IC = 250 mA
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
(ALL)
70
V
100
200
300
500
2.0
Gate Threshold Voltage
Gate-to-Source Leakage Current
VGS(th)
IGSS
VDS = VGS, ID = 4 mA
VGS = ± 20VDC, VDS = 0
3
4.0
±100
V
nA
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25 C
TJ = 25 C
TJ = 125 C
TJ = 25 C
TJ = 25 C
TJ = 125 C
TJ = 25 C
TJ = 25 C
TJ = 125 C
TJ = 25 C
TJ = 25 C
TJ = 125 C
TJ = 25 C
TJ = 25 C
TJ = 125 C
(ALL)
±200
200
1000
.012
-
-
.020
-
-
.045
-
-
.085
-
-
.23
-
-
Drain-to-Source Leakage Current
(Zero Gate Voltage Drain Current)
Static Drain-to-Source On-State
Resistance (1)
IDSS
VDS =0.8·BVDSS
VGS = 0 V
VGS= 10V, ID= 40 A
ID= 75 A
(ALL)
mA
RDS(on)
MM121-07
W
.015
.025
-
.020
.035
-
.055
.090
-
.085
.170
-
ID= 40 A
ID= 37.5 A
ID= 75 A
ID= 37.5 A
ID= 25A
ID= 50 A
ID= 25 A
ID= 20A
ID= 40 A
ID= 20 A
MM121-10
MM121-20
MM121-30
MM121-50
ID= 12 A
ID= 24 A
ID= 12 A
.27
.45
Forward Transconductance (1)
Input Capacitance
gfs
VDS ³ 10 V;
ID = 40 A
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
30
25
26
22
15
40
30
32
25
S
ID = 75 A
ID = 50 A
ID = 40 A
ID = 24 A
21
C
iss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4400
4500
4400
4800
4200
2000
1600
800
745
450
pF
Output Capacitance
Coss
Datasheet# MSC0337A
Reverse Transfer Capacitance
C
rss
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
1200
800
285
280
135
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1 W
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2 W
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2 W
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2 W
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2 W
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1 W
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2 W
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2 W
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2 W
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2 W
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1 W
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2 W
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2 W
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2 W
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2 W
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1 W
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2 W
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2 W
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2 W
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2 W
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
40
20
20
20
16
70
60
15
60
33
130
80
75
75
65
55
60
20
45
30
tbd
30
25
30
25
-
110
20
90
45
-
110
90
100
80
-
90
25
90
40
Turn-on Delay Time
Rise Time
td(on)
ns
On Energy
Turn-off Delay Time
tri
Fall Time
Off Energy
td(off)
tfi
Total Gate Charge
Qg(on)
VGS = 10 V, VDS= 50 V, ID= 40 A
VGS = 10 V, VDS= 50 V, ID= 37.5 A
VGS = 10 V, VDS= 100 V, ID= 25 A
VGS = 10 V, VDS= 150 V, ID= 20 A
VGS = 10 V, VDS= 250 V, ID= 12 A
VGS = 10 V, VDS= 50 V, ID= 40 A
VGS = 10 V, VDS= 50 V, ID= 37.5 A
VGS = 10 V, VDS= 100 V, ID= 25 A
VGS = 10 V, VDS= 150 V, ID= 20 A
VGS = 10 V, VDS= 250 V, ID= 12 A
VGS = 10 V, VDS= 50 V, ID= 40 A
VGS = 10 V, VDS= 50 V, ID= 37.5 A
VGS = 10 V, VDS= 100 V, ID= 25 A
VGS = 10 V, VDS= 150 V, ID= 20 A
VGS = 10 V, VDS= 250 V, ID= 12 A
VGS= 0, IF= IS
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
240
180
190
180
135
30
36
35
30
30
120
85
95
80
65
tbd
260
220
200
160
tbd
70
50
50
40
tbd
160
110
105
85
1.5
1.75
1.5
1.5
1.5
-
250
200
300
200
300
200
350
250
400
nC
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Qgs
Qgd
VSD
trr
Body diode forward voltage (1)
Body diode reverse recovery time
V
IE= 10 A, dIE/dt= 100 A/us,
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
150
-
-
-
-
-
-
-
-
ns
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
-
Body diode reverse recovery charge
Qrr
IE= 10 A, dIE/dt= 100 A/us,
tbd
tbd
tbd
tbd
1.5
2.6
mC
TJ= 25 C
TJ= 125 C
TJ= 25 C
MM121-30
MM121-50
tbd
tbd
1
TJ= 125 C
2
Notes
(1) Pulse test, t £ 300 m s, duty cycle d £ 2%
(2) Microsemi does not manufacture the igbt die; contact Microsemi for details.
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