MQ6509A [MICROSEMI]
Rectifier Diode, 16 Element, 0.3A, Silicon, CERAMIC, DIP-14;
| 型号： | MQ6509A |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 16 Element, 0.3A, Silicon, CERAMIC, DIP-14 CD 二极管 |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6509A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering
diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to
the positive side of the power supply line and to ground (see Figure 1). An external
TVS diode may be added between the positive supply line and ground to prevent over-
voltage on the supply rail. They may also be used in fast switching core-driver
applications. This includes computers and peripheral equipment such as magnetic
cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such as high-
density packaging and improved reliability. This is a result of fewer pick and place
operations, smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting.
14-PIN Ceramic DIP
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
•
•
•
•
•
•
Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX6509A for a JANTX screen.
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
•
14-PIN Ceramic DIP
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
600 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +150oC
Weight 2.05 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of package
Carrier tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.8 mW/oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
REVERSE
RECOVERY TIME
trr
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
RECOVERY TIME
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
I = IR = 200 mA
F
V
V
F2
F1
Ct
t
fr
i = 20 mA
rr
I = 100 mA
I = 500 mA
I
VR = 0 V
F = 1 MHz
F
F
R1
I = 500 mA
F
R = 100 ohms
L
(Note 1)
(Note 1)
VR = 40 V
PART
NUMBER
V
V
μA
pF
ns
ns
6509A
1
1.5
0.1
8.0
40
20
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2007
3-27-2007
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
6509A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VBR
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VF
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
Ct
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+VCC)
I/O Port
GND (or -VCC)
Steering Diode Application
FIGURE 1
Copyright © 2007
3-27-2007
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号：
©2020 ICPDF网 联系我们和版权申明