MQUPS120E3 [MICROSEMI]

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE, 2 PIN;


型号：	MQUPS120E3
厂家：	Microsemi
描述：	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE, 2 PIN 光电二极管
文件：	总4页 (文件大小：526K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UPS120e3

1.0 A Schottky Barrier Rectifier

KEY FEATURES

DESCRIPTION

The Microsemi UPS120e3 Powermite^®Schottky rectifier is RoHS

compliant and offers low forward voltage characteristics with reverse

blocking capabilities up to 20 Volt. They are ideal for surface mount

applications that operate at high frequencies.

Low thermal resistance DO-216AA package

RoHS Compliant with e3 suffix part number

Guard-ring-die construction for transient

protection

Efficient heat path with Integral locking

bottom metal tab

Low forward voltage

Full metallic bottom eliminates flux

entrapment

Compatible with automatic insertion

Low profile-maximum height of 1mm

Options for screening in accordance with

MIL-PRF-19500 for JAN, JANTX, and

JANTXV are available by adding MQ, MX, or

MV prefixes respectively to part numbers.

For example, designate MXUPS120e3 for a

JANTX (consult factory for Tin-Lead plating).

Optional 100% avionics screening available

by adding MA prefix for 100% temperature

cycle, thermal impedance and 24 hours

HTRB (consult factory for Tin-Lead plating)

In addition to its size advantages, Powermite^®package features include a

full metallic bottom that eliminates possibility of solder flux entrapment

during assembly, and a unique locking tab acts as an efficient heat path

from die to mounting plane for external heat sinking with very low thermal

resistance junction to case (bottom). Its innovative design makes this

device ideal for use with automatic insertion equipment.

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

APPLICATIONS/BENEFITS

Switching and Regulating Power Supplies.

Silicon Schottky (hot carrier) rectifier for

minimal reverse voltage recovery

Elimination of reverse-recovery oscillations

to reduce need for EMI filtering

RMS Reverse Voltage

V _{R (RMS)}

Average Rectified Output Current (at rated

V_R, T_C=135ºC)

Peak Repetitive Forward Current (at rated V_R,

square wave, 100kHz, T_C=135ºC)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave

1.0

I_o

I_FRM

I_FSM

2.0

Charge Pump Circuits

Reduces reverse recovery loss with low I_RM

Small 8.45 mm²foot print

Voltage Rate of Change (rated V_R, TJ =25ºC)

dv/dt

T_STG

T_J

10,000

V/µs

ºC

(See mounting pad details next page)

Storage Temperature

-55 to +150

-55 to +125

MECHANICAL & PACKAGING

Junction Temperature

ºC

• CASE: Void-free transfer molded

thermosetting epoxy compound meeting

UL94V-0

• FINISH: Annealed matte-Tin plating over

copper and readily solderable per MIL-

STD-750 method 2026 (consult factory for

Tin-Lead plating)

THERMAL CHARACTERISTICS

(UNLESS OTHERWISE SPECIFIED)

Thermal Resistance

Junction-to-case (bottom)

Junction-to-ambient (1)

(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print

R_θJC

R_θJA

240

ºC/ Watt

• POLARITY: See figure (left)

• MARKING: S20•

• WEIGHT: 0.016 grams (approx.)

• Package dimension on last page

• Tape & Reel option: 12 mm tape per

Standard EIA-481-B, 3000 on 7 inch reel

and 12,000 on 13” reel

DO-216

See further details and dimensions on last page

6-26-2007 Rev C

Microsemi

Page 1

UPS120e3

1.0 A Schottky Barrier Rectifier

Parameter

Maximum Forward Voltage (Note 1)

See Figure 2

Symbol Conditions

T_J= 25ºC T_J=85ºC Units

I_F= 0.1 A

0.34

0.45

0.65

0.25

0.415

0.67

I_F= 1.0 A

I_F= 3.0 A

V_F

Maximum Instantaneous Reverse

Current (Note 1)

V_R= 20 V

V_R= 10 V

0.40

0.10

I_R

Note: 1 Short duration test pulse used to minimize self – heating effect.

PACKAGE & MOUNTING PAD DIMENSIONS

DO-216 Package (All dimensions +/-.005 inches)

MOUNTING PAD in inches

6-26-2007 Rev C

Microsemi

Page 2

UPS120e3

1.0 A Schottky Barrier Rectifier

CHARTS AND GRAPHS

FIGURE 1

FIGURE 2

Forward Power Dissipation

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this

device under any reverse voltage conditions. Calculations of T_Jtherefore must include forward and reverse

power effects. The allowable operating T_Jmay be calculated from the equation:

T_J= T_{J max}= r(t)(Pf+Pr) where

r(t) = thermal impedance under given conditions.

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the derated allowable T_Jdue to reverse bias under DC conditions only and is calculated as

T_J= T_{J max}-r(t) Pr, Where r(t)=Rthja. For other power applications further calculations must be performed.

6-26-2007 Rev C

Microsemi

Page 3

UPS120e3

1.0 A Schottky Barrier Rectifier

FIGURE 3 – Thermal Impedance Junction to Case (bottom)

FIGURE 4 – Thermal Impedance Junction to Ambient

6-26-2007 Rev C

Microsemi

Page 4

MQUPS120E3 [MICROSEMI]

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