MRF545 [MICROSEMI]
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS; 射频与微波离散小功率三极管
| 型号： | MRF545 |
| 厂家： | 
Microsemi |
| 描述： | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF545
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
·
Silicon PNP, high Frequency, high breakdown, To-39 packaged,
Transistor
·
·
Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
1. Emitter
2. Base
3. Collector
High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
TO-39
·
High F - 1400 MHz
T
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
70
Unit
Vdc
Vdc
Vdc
mA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
100
3.0
400
Thermal Data
P
D
3.5
20
Watts
mW/ ºC
Total Device Dissipation @ T = 25ºC
Derate above 25ºC
A
Storage Temperature Range
Tstg
-65 to +200
ºC
MSC1315.PDF 10-25-99
MRF545
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Test Conditions
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
70
-
-
Vdc
Collector-Base Breakdown Voltage
100
-
-
-
-
Vdc
(IC= 100 mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
3.0
Vdc
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
-
-
20
100
mA
ICES
Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
1.0
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 6.0 Vdc)
15
-
-
DYNAMIC
Symbol
Test Conditions
Value
Typ.
Min.
Max.
Unit
Output Capacitance
COB
CIB
CCB
fT
(VCB = 10Vdc, IE=0, f=1 MHz)
-
2.5
5.4
-
pF
Input Capacitance
(VEB = 3Vdc, IE=0, f=1 MHz)
-
-
-
3.2
-
pF
pF
Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
2.8
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 25 Vdc, f = 250 MHz)
1000
1400
MHz
MSC1315.PDF 10-25-99
MRF545
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
G
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
Maximum Unilateral Gain
Maximum Available Gain
Insertion Gain
U max
-
14
dB
-
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
MAG
-
14.5
12.5
dB
dB
-
-
2
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
|S |
21
11.5
Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
(MHz)
|S11|
0.139
0.162
0.522
0.260
0.275
0.262
0.333
0.327
0.517
0.463
|S21|
7.43
4.35
1.7
|S12|
0.031
0.066
0.113
0.154
0.188
0.226
0.925
0.379
0.402
0.437
|S22|
0.573
0.508
0.493
0.487
0.445
0.495
0.456
0.424
0.393
0.375
Ð f
Ð f
101
Ð f
83
Ð f
100
200
300
400
500
600
700
800
900
1000
-105
-19
-23
-29
-43
-53
-69
-71
-85
-109
-115
-168
130
129
133
123
118
122
97
80
75
63
54
46
45
35
30
27
82
85
85
71
74
75
66
61
63
2.23
1.74
1.49
0.951
1.3
1.21
1.07
115
MSC1315.PDF 10-25-99
MRF545
MSC1315.PDF 10-25-99
相关型号：
MRF547
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP, TO-117
MOTOROLA
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