MS1076B [MICROSEMI]
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4;
| 型号： | MS1076B |
| 厂家： | 
Microsemi |
| 描述： | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 局域网 晶体管 |
| 文件： | 总6页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MS1076
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
•
•
•
•
•
•
30 MHz
28 VOLTS
GOLD METALLIZATION
POUT = 220 W PEP
GP = 12 dB GAIN MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor
designed primarily for SSB and VHF communications. This
device utilizes an emitter ballasted die geometry for maximum
ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
Collector - Base Voltage
70
35
V
V
Collector - Emitter Voltage
Emitter - Base Voltage
Device Current
4.0
V
16
A
W
PDISS
TJ
Power Dissipation
250
+200
Junction Temperature
Storage Temperature
°C
°C
TSTG
- 65 to +150
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
0.7
°C/W
Rev A: October 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS1076
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCES
BVCEO
BVEBO
ICEO
IC = 100 mA
IC = 200 mA
IE = 20 mA
VCE = 30 V
VCE = 35 V
VCE = 5 V,
70
---
---
V
35
4.0
---
---
---
---
---
---
---
---
5
V
V
mA
mA
---
ICES
---
5
HFE
IC = 7 A
15
60
DYNAMIC
Symbol
Test Conditions
Value
Typ.
---
Min.
220
Max.
---
Unit
WPEP
dB
POUT
GP
f = 30 MHz
f = 30 MHz
f = 30 MHz
f = 30 MHz
f = 1 MHz
V
CE = 28 V
ICQ = 750 mA
ICQ = 750 mA
ICQ = 750 mA
ICQ = 750 mA
V
CE = 28 V
CE = 28 V
CE = 28 V
CB = 28 V
12
40
---
---
---
---
---
---
ηC
V
%
dBc
pf
IMD
V
V
---
-30
---
COB
450
Conditions
f1 = 30.000 MHz
f2 = 30.001 MHz
HFE BINNING (marked on lid with appropriate letter):
A = 15-19
B = 19-22.5
C = 22.5-27
D = 27-32
E = 32-38
F = 38-45
G = 45-50
H = 50-55
I = 55-60
IMPEDANCE DATA
FREQ
ZIN
ZCL
30 MHz
1.2 + j0.41
1.25 + j1.92
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS1076
TYPICAL PERFORMANCE
Pout vs Pin
275
250
225
200
175
150
125
100
75
50
25
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin(W)
Gain vs Pout
15.50
15.00
14.50
14.00
13.50
13.00
12.50
12.00
11.50
11.00
0
20 40 60 80 100 120 140 160 180 200 220 240 260
Pout(W)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS1076
TEST CIRCUIT
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS1076
BIAS CIRCUIT
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS1076
PACKAGE MECHANICAL DATA
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
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