MS1642P [MICROSEMI]

RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE; 射频与微波晶体管VHF , UHF通用
MS1642P
型号: MS1642P
厂家: Microsemi    Microsemi
描述:

RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE
射频与微波晶体管VHF , UHF通用

晶体 晶体管 射频 微波
文件: 总3页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MS1642P  
RF & MICROWAVE TRANSISTORS  
VHF, UHF GENERAL PURPOSE  
Features  
400 MHz  
GOLD METALLIZATION  
POUT = 10 W MINIMUM  
GP = 12 dB MINIMUM  
INFINITE VSWR CAPABILITY  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1642 is a gold metallized silicon NPN transistor  
designed for general purpose amplifier applications in  
the VHF and UHF frequency bands. Diffused emitter  
ballast resistors and computer controlled wirebonding  
techniques ensure maximum device reliability and  
consistency.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
PDISS  
Parameter  
Value  
Unit  
W
A
Power Dissipation*  
Device Current*  
27  
IC(max)  
1.5  
TSTG  
VCBO  
VCEO  
VEBO  
Storage Temperature  
-65 to +150  
ºC  
Collector – Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
60  
33  
V
V
V
4.0  
Thermal Data  
RTH(J-C)  
Thermal Resistance Junction-case  
6.4  
°C/W  
*Applies only to rated RF amplifier operation  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
Visit our web site at www.microsemi.com or contact our factory direct.  
MS1642P  
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)  
STATIC  
Value  
Typ.  
---  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
Bvceo  
Bvces  
Bvcbo  
Bvebo  
Icbo  
IC = 20 mA  
IC= 20 mA  
IC = 20 mA  
IE= 2.0 mA  
VCB = 30 V  
VCE = 5 V  
IE = 0 mA  
IC = 0 mA  
IE = 0 mA  
IC = 0 mA  
33  
---  
V
V
60  
60  
4.0  
---  
---  
---  
---  
---  
---  
---  
---  
V
---  
V
1.0  
100  
mA  
---  
HFE  
IC = 500 mA  
20  
DYNAMIC  
Value  
Typ.  
---  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
f =400MHz  
f =400MHz  
f =400MHz  
f =1 MHz  
POUT = 10W  
Pout = 10W  
VCC = 28V  
VCC =28V  
VCC =28V  
---  
0.65  
W
dB  
%
PIN  
GP  
12  
50  
---  
---  
---  
---  
---  
---  
12  
Pout = 10W  
ηC  
COB  
VCB =28V  
pF  
Rev B January 2009  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
Visit our web site at www.microsemi.com or contact our factory direct.  
MS1642P  
PACKAGE MECHANICAL DATA  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
Visit our web site at www.microsemi.com or contact our factory direct.  

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