MS2209_08 [MICROSEMI]
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS; 射频与微波晶体管航空电子应用
| 型号： | MS2209_08 |
| 厂家： | 
Microsemi |
| 描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MS2209
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
•
•
•
•
•
225 MHz BANDWIDTH
COMMON BASE
GOLD METALLIZATION
CLASS C OPERATION
POUT = 90 W MIN. WITH 8.4 dB GAIN
DESCRIPTION:
The MS2209 is a broadband, high peak pulse power silicon NPN
bipolar device specifically designed for avionics applications requiring
broad bandwidth with moderate duty cycles and pulse width
constraints such as ground/ship based DME/TACAN.
This device is also designed for specialized applications including
JTIDS applications when duty cycle is moderately higher. Gold
metallization and emitter ballasting assure high reliability under Class
C amplifier operation.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
50
Unit
V
VCC
Collector Supply Voltage
IC
Device Current
7.0
A
PDISS
TJ
Power Dissipation
220
W
Junction Temperature (RF Pulsed Operation)
Storage Temperature
+200
°C
°C
TSTG
-65 to +200
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.80
°C/W
Rev B- September 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS2209
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Value
Symbol
Test Conditions
Unit
Min.
65
Typ.
---
Max.
---
BVCBO
BVEBO
BVCER
ICBO
IC = 40mA
IE = 10mA
IC= 40mA
VCB= 35 V
VCE = 5 V
IE = 0mA
IC=0mA
V
V
3.0
65
---
---
---
---
V
RBE = 10Ω
------
20
---
12
mA
---
hFE
IC = 2A
---
120
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
90
Typ.
100
---
Max.
---
POUT
GP
f = 960-1215MHz
f = 960-1215MHz
f = 960-1215MHz
f = 960MHz
VCC = 50V
VCC = 50V
VCC = 50V
PIN = 13W
PIN = 13W
PIN = 13W
PIN = 13W
W
dB
%
8.4
38
---
44
---
ηC
VSWR
VCC = 50V
10:1
Pulse Width = 10 µs
Duty Cycle = 10%
IMPEDANCE DATA
Freq
Zin (Ω)
5+j9.0
Zcl (Ω)
10.2-j8.8
9.5-j7.6
9.0-j6.2
8.4-j5.0
7.0-j3.7
960
1025
1090
1150
1215
6+j8.0
6.8+j7.2
6.3+j7.0
5.8+j7.8
Vcc=50v
Pout=90w
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS2209
TEST CIRCUIT
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS2209
PACKAGE MECHANICAL DATA
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
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