MSAER57N10A [MICROSEMI]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY; N沟道增强型功率MOSFET +肖特基
MSAER57N10A
型号: MSAER57N10A
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY
N沟道增强型功率MOSFET +肖特基

文件: 总2页 (文件大小:246K)
下载:  下载PDF数据表文档文件

MSAER57N10AS

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 MICROSEMI

MSAER57N10AV

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 MICROSEMI

MSAEX100N20E

Small Signal Field-Effect Transistor, COOLPACK-5

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0 MICROSEMI

MSAEX150N07E

Small Signal Field-Effect Transistor, COOLPACK-5

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0 MICROSEMI

MSAEX8P50A

P-CHANNEL ENHANCEMENT MODE POWER MOSFET/FRED

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9 MICROSEMI

MSAEZ15N40A

Small Signal Field-Effect Transistor

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0 MICROSEMI

MSAEZ33N20A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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12 MICROSEMI

MSAEZ50N10A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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10 MICROSEMI

MSAEZ58N06A

Small Signal Field-Effect Transistor

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0 MICROSEMI

MSAFA1N100D

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

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17 MICROSEMI

MSAFA1N100D

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

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6 MICROSEMI

MSAFA1N100D

Power Field-Effect Transistor, 1A I(D), 1000V, 13.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2

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0 MICROSEMI

MSAFA1N100D_01

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

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8 MICROSEMI

MSAFA1N100DL

Power Field-Effect Transistor, 1A I(D), 1000V, 13.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2

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0 MICROSEMI

MSAFA1N100P3

N-Channel enhancement mode high density

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10 MICROSEMI