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MSAFZ58N06A [MICROSEMI]

Small Signal Field-Effect Transistor;

MSAFZ58N06A


元器件型号：	MSAFZ58N06A
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Small Signal Field-Effect Transistor
PDF文件：	总1页 (文件大小：94K)
下载文档：	下载PDF数据表文档文件
型号参数：MSAFZ58N06A参数

MSAG

MINI SHUNTS .050 & .100 [2.54] CENTERLINE

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21 ADAM-TECH

MSAGA11F120D

Fast IGBT Die for Implantable Cardio Defibrillator Applications

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27 MICROSEMI

MSAGA11F120D-L

Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, DIE-2

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0 MICROSEMI

MSA-G-R

Interconnection Device

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0 ADAM-TECH

MSAGX60F60A

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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16 MICROSEMI

MSAGX75F60A

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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14 MICROSEMI

MSAGX75F60B

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, P-Channel

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0 MICROSEMI

MSAGX75L60A

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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13 MICROSEMI

MSAGZ52F120A

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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11 MICROSEMI

MSAGZ52F120A

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel

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0 MICROSEMI

MSAHX60F60A

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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20 MICROSEMI

MSAHX60F60B

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

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0 MICROSEMI

MSAHX75L60C

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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13 MICROSEMI

MSAHZ52F120A

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel

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-

0 MICROSEMI

MSAHZ52F120B

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel

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0 MICROSEMI

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