MSASC150H45LR [MICROSEMI]
LOW VOLTAGE DROP SCHOTTKY DIODE; 低压降肖特基二极管
| 型号： | MSASC150H45LR |
| 厂家： | 
Microsemi |
| 描述： | LOW VOLTAGE DROP SCHOTTKY DIODE |
| 文件： | 总3页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6821
(MSASC150H45L)
1N6821R
Features
·
·
·
·
·
·
·
·
Tungsten/Platinum schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
(MSASC150H45LR)
Hermetically sealed, low profile ceramic surface mount power package
45 Volts
Low package inductance
Very low thermal resistance
150 Amps
Available as standard polarity (strap-to-anode, 1N6821) and reverse
polarity (strap-to-cathode: 1N6821R)
LOW VOLTAGE
DROP SCHOTTKY
DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc£ 125°C
derating, forward current, Tc³ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1ms, f= 1kHz
Junction Temperature Range
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
45
45
45
150
4
750
2
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
-55 to +150
-55 to +150
0.20
°C
°C
°C/W
Storage Temperature Range
Thermal Resistance, Junction to Case:
Tstg
1N6821
1N6821R
qJC
0.35
Mechanical Outline
ThinKey™3
Datasheet# MSC1035A
1N6821 (MSASC150H45L)
1N6821R (MSASC150H45LR)
Electrical Parameters
DESCRIPTION
Reverse (Leakage)
Current
SYMBOL
IR25
CONDITIONS
VR= 45 Vdc, Tc= 25°C
VR= 45 Vdc, Tc= 100°C
VR= 45 Vdc, Tc= 125°C
IF= 20A, Tc= 25°C
IF= 50A, Tc= 25°C
IF= 100A, Tc= 25°C
IF= 150A, Tc= 25°C
IF= 200A, Tc= 25°C
IF= 50A, Tc= -55°C
IF= 50A, Tc= 125°C
IF= 100A, Tc= 125°C
IF= 150A, Tc= 100°C
IF= 10 mA, Tc= 25°C
IF= 50 mA, Tc= 25°C
IF= 100 mA, Tc= 25°C
VR= 10 Vdc
MIN
TYP.
1
MAX
10
300
UNIT
mA
mA
mA
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
pF
IR100
IR125
VF1
VF2
VF3
VF4
VF5
VF6
VF7
VF8
VF9
VF10
VF11
VF12
Cj1
125
500
340
410
475
540
600
470
315
415
515
135
175
195
4500
6400
55
Forward Voltage
370
450
530
600
pulse test,
pw= 300 ms
d/c£ 2%
550
380
-
-
-
Junction Capacitance
4900
Cj2
BVR
VR= 5 Vdc
IR= 5 mA, Tc= 25°C
IR= 5 mA, Tc= -55°C
pF
V
V
Breakdown Voltage
45
50
Typical VF data, msasc150h45
652
650
600
550
500
450
400
350
300
250
594
535
514
517
488
25C
474
100C
125C
432
415
406
338
310
50
70
90
110
130
150
IF (A)
170
190
210
230
250
1N6821 (MSASC150H45L)
1N6821R (MSASC150H45LR)
Cj vs VR Typical Curve
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
1
10
100
VR (volts)
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