MSASC25W100KRV [MICROSEMI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN;
| 型号： | MSASC25W100KRV |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 100V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN |
| 文件： | 总2页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8700 E. Thomas Road
Scottsdale, AZ 85252
PH: (480) 941-6300
FAX: (480) 941-1503
MSASC25W100K
MSASC25W100KR
Features
•
•
•
•
•
•
•
•
Platinum schottky barrier
Oxide passivated structure
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
100 Volts
25 Amps
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap is anode: MSASC25W100K) and
reverse polarity (strap is cathode: MSASC25W100KR)
TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)
screening i.a.w. Microsemi internal procedure PS11.50 available
Low Profile
Surface Mount
•
SCHOTTKY DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
VRWM
VR
100
100
Volts
Volts
Volts
Amps
Working Peak Reverse Voltage
DC Blocking Voltage
100
IF(ave)
dIF/dT
IFSM
25
Average Rectified Forward Current, Tc≤ 145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
(3.3)
Amps/°C
280
Amps
Amp
°C
°C
°C/W
IRRM
Tj
2
-65 to +175
-65 to +175
0.85
Storage Temperature Range
Thermal Resistance, Junction to Case:
Tstg
MSASC25W100K
MSASC25W100KR
θJC
0.95
Mechanical
Outline
ThinKey™2
Datasheet# MSC1034F
MSASC25W100K
MSASC25W100KR
Electrical Parameters
DESCRIPTION
Reverse (Leakage)
Current
SYMBOL
IR25
CONDITIONS
VR= 100 Vdc, Tc= 25°C
VR= 100 Vdc, Tc= 125°C
IF= 5A, Tc= 25°C
IF= 10A, Tc= 25°C
IF= 25A, Tc= 25°C
IF= 50A, Tc= 25°C
IF= 10A, Tc= 125°C
IF= 25A, Tc= 125°C
VR= 10 Vdc
MIN
TYP.
7
MAX
500
7
700
780
910
-
630
750
UNIT
µA
IR125
VF1
VF2
VF3
VF4
VF5
VF6
Cj1
2
mA
mV
mV
mV
mV
mV
mV
pF
Forward Voltage
650
750
830
940
590
690
370
500
110
pulse test,
pw= 300 µs
d/c≤ 2%
Junction Capacitance
Breakdown Voltage
Cj2
BVR
VR= 5 Vdc
600
pF
100
100
V
IR= 1 mA, Tc= 25°C
IR= 1 mA, Tc= -55°C
V
Average VF Characteristic Curves
1.1
1
TC=-55C
TC=25C
TC=125C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
5
10
15
20
25
30
IF(A)
Datasheet# MSC1034F
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