MSC2X31 [MICROSEMI]
Dual Silicon Carbide Schottky Barrier Diodes;
| 型号： | MSC2X31 |
| 厂家： | 
Microsemi |
| 描述： | Dual Silicon Carbide Schottky Barrier Diodes |
| 文件： | 总7页 (文件大小：1718K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the
performance over silicon diode solutions while lowering the total cost of ownership for high-voltage
applications. MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package.
Figure 2 • Anti-parallel MSC2X30SDA120J
Figure 1 • Parallel MSC2X31SDA120J
Features
The following are key features of the MSC2X31SDA120J and MSC2X30SDA120J devices:
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•
•
•
•
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No reverse recovery
Low forward voltage
Low leakage current
Avalanche-energy rated
RoHS compliant
Isolated voltage to 2500 V
Benefits
The following are benefits of the MSC2X31SDA120J and MSC2X30SDA120J devices:
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•
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•
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
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Product Overview
Applications
The MSC2X31SDA120J and MSC2X30SDA120J devices are designed for the following applications:
•
•
Power factor correction (PFC)
Anti-parallel diode
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◦
◦
Switch-mode power supply
Inverters/converters
Motor controllers
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Freewheeling diode
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Switch-mode power supply
Inverters/converters
Snubber/clamp diode
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Device Specifications
Device Specifications
This section shows the specifications of the MSC2X31SDA120J and MSC2X30SDA120J devices.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per diode of the MSC2X31SDA120J and
MSC2X30SDA120J devices. TC = 25 °C unless otherwise specified.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Ratings
1200
30
Unit
V
VR
IF
Maximum DC reverse voltage
Maximum DC forward current
TC = 100 °C
A
The following table shows the thermal and mechanical characteristics of the MSC2X31SDA120J and
MSC2X30SDA120J devices.
Table 2 • Thermal and Mechanical Characteristics
Symbol
Characteristics
Min
Typ
Max
Unit
°C/W
V
RΘJC
Junction-to-case thermal resistance
0.60
0.87
VISOLATION
RMS voltage
2500
–55
(50 Hz–60 Hz sinusoidal waveform from
terminals to mounting base for 1 minute)
TJ, TSTG
Operating junction and storage tempera-
ture range
175
°C
Wt
Package weight
1.03
29.2
oz
g
Mounting torque, M4 screw
10
lbf-in
N-m
1.1
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Device Specifications
Electrical Performance
The following table shows the static characteristics per diode of the MSC2X31SDA120J and MSC2X30SDA120J
devices. TJ = 25 °C unless otherwise specified.
Table 3 • Static Characteristics Per Diode
Symbol
Characteristics
Test Conditions
Min
Typ
1.5
2.1
9
Max
Unit
VF
Forward voltage
IF = 30 A
1.8
V
TJ = 175 °C
TJ = 175 °C
IRM
Reverse leakage current
VR = 1200 V
VR = 600 V
200
μA
150
130
141
105
QC
CJ
Total capacitive charge
Junction capacitance
nC
pF
VR = 400 V, f = 1 MHz
VR = 800 V, f = 1 MHz
053-4104 MSC2X31/30SDA120J Datasheet Revision A
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Device Specifications
Typical Performance Curves
This section shows the typical performance curves per diode of the MSC2X31SDA120J and MSC2X30SDA120J
devices.
Figure 3 • Maximum Transient Thermal Impedance
Figure 4 • Forward Current vs. Forward Voltage
Figure 5 • Reverse Current vs. Reverse Voltage
053-4104 MSC2X31/30SDA120J Datasheet Revision A
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Package Specification
Package Specification
This section shows the package specification of the MSC2X31SDA120J and MSC2X30SDA120J devices.
Package Outline Drawing
The following figure illustrates the SOT-227 package outline of the MSC2X31SDA120J and MSC2X30SDA120J
devices. The dimensions in the following figure are in millimeters and (inches).
Figure 6 • Package Outline Drawing
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Legal
Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information
contained in this publication is provided for the sole purpose of designing with and using Microsemi
products. Information regarding device applications and the like is provided only for your convenience
and may be superseded by updates. Buyer shall not rely on any data and performance specifications or
parameters provided by Microsemi. It is your responsibility to ensure that your application meets with
your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS
OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY,
PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.
IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR
CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION
OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE
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buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any
Microsemi intellectual property rights unless otherwise stated.
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053-4104 | October 2020 | Released
053-4104 MSC2X31/30SDA120J Datasheet Revision A
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