MSCD60-12 [MICROSEMI]

Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, CASE D1, 3 PIN;
MSCD60-12
型号: MSCD60-12
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, CASE D1, 3 PIN

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MSKD60 ; MSAD60 ; MSCD60  
Glass Passivated Rectifier  
Diode Modules  
VRRM 800 to 1800V  
IFAV 60 Amp  
Applications  
y
y
y
Non-controllable rectifiers for AC/AC  
converters  
Line rectifiers for transistorized AC motor  
controllers  
Field supply for DC motors  
Circuit  
Features  
y
Blocking voltage:800 to 1800V  
Heat transfer through aluminum oxide DBC  
ceramic isolated metal baseplate  
Glass passivated chip  
y
y
y
UL E243882 approved  
Module Type  
TYPE  
VRRM  
800V  
1200V  
1600V  
1800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MSCD60-08  
MSCD60-12  
MSCD60-16  
MSCD60-18  
MSAD60-08  
MSAD60-12  
MSAD60-16  
MSAD60-18  
MSKD60-08  
MSKD60-12  
MSKD60-16  
MSKD60-18  
Maximum Ratings  
Symbol  
Conditions  
Values  
60  
Units  
Single phase ,half wave 180°conduction Tc=100℃  
Single phase ,half wave 180°conduction Tc=98℃  
t=10mS Tvj =45℃  
A
IFAV  
IF(RMS)  
IFSM  
i2t  
90  
A
1150  
A
A2s  
V
t=10mS Tvj =45℃  
6600  
a.c.50HZ;r.m.s.;1min  
3000  
Visol  
Tvj  
-40 to +150  
-40 to +125  
3±15%  
5±15%  
100  
Nm  
Nm  
g
Tstg  
Mt  
To terminals(M5)  
Ms  
To heatsink(M6)  
Weight  
Module (Approximately)  
Thermal Characteristics  
Symbol  
Conditions  
Values  
0.59  
Units  
/W  
Per diode  
Rth(j-c)  
Rth(c-s)  
Module  
0.1  
/W  
Electrical Characteristics  
Symbol  
Values  
Conditions  
Units  
Min.  
Typ. Max.  
T=25IF =200A  
Tvj=150VRD=VRRM  
1.20  
1.30  
5
V
VFM  
IRD  
mA  
MSKD60_MSAD60_MSCD60-Rev2  
Oct,2011  
www.microsemi.com  
1/3  
MSKD60 ; MSAD60 ; MSCD60  
Performance Curves  
100  
W
100  
DC  
DC  
A
sin.180  
rec.120  
rec.60  
sin.180  
rec.120  
rec.30  
50  
50  
rec.60  
rec.30  
Pvtot  
ID  
0
0
0 ID  
50  
A 100  
0
Tc  
50  
100  
150  
Fig1. Power dissipation  
Fig2.Forward Current Derating Curve  
0.6  
1500  
A
50HZ  
Zth(j-C)  
/ W  
0.3  
750  
0
0
1
10  
cycles 100  
0.001  
0.01  
0.1  
1.0  
10  
S 100  
Fig4. Max Non-Repetitive Forward Surge  
Current  
Fig3. Transient thermal impedance  
300  
A
200  
100  
typ.  
max.  
25℃  
- - -125℃  
IF  
0
MSKD60_MSAD60_MSCD60-Rev2  
Oct,2011  
www.microsemi.com  
2/3  
MSKD60 ; MSAD60 ; MSCD60  
V 2.0  
0
VF  
0.5  
1.0  
1.5  
Fig5. Forward Characteristics  
Package Outline Information  
CASE: D1  
Dimensions in mm  
MSKD60_MSAD60_MSCD60-Rev2  
Oct,2011  
www.microsemi.com  
3/3  

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