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MSD200-18 [MICROSEMI]

Bridge Rectifier Diode, 3 Phase, 200A, 1800V V(RRM), Silicon, CASE M3, 5 PIN;
MSD200-18
型号： MSD200-18
厂家： Microsemi    Microsemi
描述：

Bridge Rectifier Diode, 3 Phase, 200A, 1800V V(RRM), Silicon, CASE M3, 5 PIN

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MSD200  
Glass Passivated Three  
Phase Rectifier Bridge  
VRRM 800 to 1800V  
ID  
200 Amp  
Applications  
y
y
y
y
Three phase rectifiers for power supplies  
Rectifiers for DC motor field supplies  
Battery charger rectifiers  
Input rectifiers for variable frequency drives  
Circuit  
+
Features  
y
y
y
Three phase bridge rectifier  
~
MSD  
~
Blocking voltage: 800 to 1800V  
Heat transfer through aluminum oxide DCB  
ceramic isolated metal baseplate  
Glass passivated chip  
~
-
y
Module Type  
TYPE  
VRRM  
800V  
1200V  
1600V  
1800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MSD200 – 08  
MSD200 – 12  
MSD200 – 16  
MSD200 – 18  
Maximum Ratings  
Symbol  
ID  
Conditions  
Tc=100℃  
Values  
200  
Units  
A
2240  
A
IFSM  
t=10mS Tvj =45℃  
t=10mS Tvj =45℃  
i2t  
A2s  
V
25000  
3000  
a.c.50Hz;r.m.s.;1min  
Visol  
Tvj  
Tstg  
Mt  
-40 to 150  
-40 to 125  
5±15%  
5±15%  
230  
℃
℃
To terminals(M6)  
To heatsink(M6)  
Module  
Nm  
Ms  
Nm  
g
Weight  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Conditions  
Per diode  
Values  
0.45  
Units  
℃/W  
Module  
0.025  
Rth(c-s)  
℃/W  
Electrical Characteristics  
Symbol  
Conditions  
Values  
Units  
1.55  
V
VFM  
T=25℃ IFM =300A  
Tvj =25℃ VRD=VRRM  
≤0.3  
≤5  
mA  
mA  
IRD  
Tvj =150℃ VRD=VRRM  
MSD200-Rev 1  
Dec, 2009  
www.microsemi.com  
1/4  
MSD200  
Performance Curves  
400  
A
480  
W
300  
200  
Typ.  
240  
25℃  
125℃  
100  
IF  
Pvtot  
0
0
0
ID  
100  
200 A  
0
VF 0.5  
1.0  
1.5  
2.0 V  
Fig2. Power dissipation  
Fig1. Forward Characteristics  
0.5  
3000  
A
50Hz  
℃/ W  
Zth(j-C)  
2250  
0.25  
1500  
750  
0
0
1
10  
cycles 100  
0.001  
0.01  
0.1  
1
10  
100 S  
Fig4. Max Non-Repetitive Forward Surge  
Current  
Fig3. Transient thermal impedance  
250  
A
200  
150  
100  
50  
ID  
0
0
Tc  
50  
100  
150 °C  
Fig5.Forward Current Derating Curve  
MSD200-Rev 1  
Dec, 2009  
www.microsemi.com  
2/4  
MSD200  
Package Outline Information  
CASE-M3  
Dimensions in mm  
MSD200-Rev 1  
Dec, 2009  
www.microsemi.com  
3/4  

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