MSP6080US [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2;型号: | MSP6080US |
厂家: | Microsemi |
描述: | Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2 快速恢复能力电源 超快恢复二极管 快速恢复二极管 超快速恢复能力电源 |
文件: | 总3页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N6073US thru 1N6081US
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability
applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated
rectifiers (TEC =70ºC) in different package sizes with working peak reverse
voltages from 50 to 150 volts are hermetically sealed using voidless-glass
construction and an internal “Category I” metallurgical bond. These devices
are also available in axial-lead package configurations for through-hole
mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru
1N6081). Microsemi also offers numerous other rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and
surface mount packages.
Package “A”
(or “D-5A”)
Package “E”
(or “D-5B”)
Package “G”
(or “D-5C”)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
Popular 1N6073US to 1N6081US series
Voidless hermetically-sealed glass package
Extremely robust construction
•
•
•
Ultrafast recovery rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance for higher power
Triple-layer passivation
Internal “Category I” Metallurgical bonds
•
•
•
Options for screening in accordance with MIL-PRF-
19500/503 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or MSP prefix respectively , e.g.
MX6076, MV6079, MSP6081, etc.
Controlled avalanche with peak reverse power
capability
•
Inherently radiation hard as described in Microsemi
MicroNote 050
•
Axial-leaded equivalents also available (see separate
data sheet for 1N6073 thru 1N6081)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Junction Temperature: -65oC to +155oC
Storage Temperature: -65oC to +155oC
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
Peak Forward Surge Current @ 25oC: 35 Amps for
1N6073US-6075US, 75 Amps for 1N6076US-6078US,
and 175 Amps for 1N6079US-6081US at 8.3 ms half-
sine wave
Average Rectified Forward Current (IO) at TEC= +70oC:
1N6073US thru 1N6075US: 3.0 Amps
1N6076US thru 1N6078US: 6.0 Amps
1N6079US thru 1N6081US: 12.0 Amps
Average Rectified Forward Current (IO) at TA=55oC:
1N6073US thru 1N6075US: 0.85 Amps
1N6076US thru 1N6078US: 1.3 Amps
1N6079US thru 1N6081US: 2.0 Amps
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead finish.
•
•
•
•
MARKING: None
•
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 1N6073 thru 1N6075: 193 mg
1N6076 thru 1N6078: 539 mg
1N6079 thru 1N6081: 1100 mg
•
See package dimensions and recommended pad
layouts on last page for all three package sizes
•
•
Thermal Resistance (RθJEC): 13oC/W for 1N6073US-
6075US, 8.5oC/W for 1N6076US-6078US, and
5.0oC/W for 1N6079US-6081US
Solder temperature: 260oC for 10 s (maximum)
Copyright © 2007
1-17-2007 REV C
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6073US thru 1N6081US
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise specified
WORKING
PEAK
REVERSE
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
(PULSED)
MAXIMUM
REVERSE
RECOVERY
TIME*
AVERAGE
RECTIFIED
AVERAGE
RECTIFIED
PULSED
TEST
CURRENT
MAXIMUM
REVERSE
CURRENT
MAXIMUM
SURGE
CURRENT
TYPE
CURRENT I
CURRENT I
O
O
I
@ V
I
@ T = 70ºC @ T = 55ºC
R
RWM
FSM
EC
A
V
t
rr
RWM
V
I
F
F
@
VOLTS
50
100
150
50
100
150
50
100
150
VOLTS
2.04
2.04
2.04
1.76
1.76
1.76
1.50
1.50
1.50
AMPS
9.4
9.4
AMPS
3.0
3.0
3.0
6.0
6.0
6.0
12.0
12.0
12.0
AMPS
0.85
0.85
0.85
1.3
1.3
1.3
2.0
2.0
ns
30
30
30
30
30
30
30
30
30
AMPS
35
35
35
75
75
75
175
175
175
μA
1.0
1.0
1.0
5.0
5.0
5.0
10.0
10.0
10.0
1N6073US
1N6074US
1N6075US
1N6076US
1N6077US
1N6078US
1N6079US
1N6080US
1N6081US
9.4
18.8
18.8
18.8
37.7
37.7
37.7
2.0
*NOTE: IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A
SYMBOLS & DEFINITIONS
Symbol
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VBR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VRWM
VF
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
IR
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
t
rr
PACKAGE DIMENSIONS
PACKAGE A (1N6073US thru 1N6075US)
NOTE: This Package Outline has also previously
been identified as “D-5A”
PAD LAYOUT
INCHES
mm
A
B
C
0.246
6.25
1.70
2.67
INCHES
mm
0.067
MIN
MAX
.103
.200
MIN
2.46
4.70
MAX
2.62
5.08
0.105
BD
BL
ECT
S
.097
.185
.019
.003
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
.028
---
0.48
0.08
0.71
---
Copyright © 2007
1-17-2007 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6073US thru 1N6081US
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
S C O T T S D A L E D I V I S I O N
PACKAGE E (1N6076US thru 1N6078US)
E-MELF-PKG (D-5B)
Note: If mounting requires adhesive separate from the solder,
an additional 0.080 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
shown in the pad layout.
PACKAGE G (1N6079US thru 1N6081US)
G-MELF-PKG (D-5C)
Note: If mounting requires adhesive separate from the solder,
an additional 0.090 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
shown in the pad layout.
Copyright © 2007
1-17-2007 REV C
Microsemi
Scottsdale Division
Page 3
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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