MSPMPTE-45CE3 [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN;
| 型号： | MSPMPTE-45CE3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN |
| 文件： | 总3页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389
are JEDEC registered selections for both unidirectional and bidirectional
devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru
1N6389 are bi-directional where they all provide a very low specified
clamping factor for minimal clamping voltages (VC) above their respective
breakdown voltages (VBR) as specified herein. They are most often used
in protecting sensitive components from inductive switching transients or
induced secondary lightning effects as found in lower surge levels of
IEC61000-4-5 . They are also very successful in protecting airborne
avionics and electrical systems. Since their response time is virtually
CASE 1
instantaneous, they can also protect from ESD and EFT per IEC61000-4-2
and IEC61000-4-4.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Unidirectional and bidirectional TVS series for thru-hole
mounting
• Designed to protect Bipolar and MOS
Microprocessor based systems.
•
•
Suppresses transients up to 1500 watts @ 10/1000 µs
• Protection from switching transients and induced RF
• ESD & EFT protection per IEC 61000-4-2 and -4-4
t
clamping (0 volts to V(BR) min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
• Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
•
•
Working voltage (VWM) range 5 V to 45 V
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
Low clamping factor (ratio of actual VC/VBR): 1.33 @ full
rated power and 1.20 @ 50% rated power
• Secondary lightning protection per IEC61000-4-5
•
•
Economical plastic encapsulated TVS for thru-hole mount
with 12 Ohms source impedance:
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS are also available
by adding MQ, MX, MV, MSP prefixes respectively to
part numbers, e.g. MX1N6373, etc.
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
• Secondary lightning protection per IEC61000-4-5
•
Surface mount equivalent packages also available as
SMCJ6373 – SMCJ6389 (consult factory for other
surface mount options)
with 2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
•
•
RoHS Compliant devices available by adding “e3” suffix
Metal package axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
1500 Watts for 10/1000 μs with repetition rate of 0.01% or
• CASE: Void-free transfer molded thermosetting
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)
epoxy body meeting UL94V-0
•
•
Operating & Storage Temperatures: -65o to +150oC
• FINISH: Tin-Lead or RoHS Compliant annealed-
matte Tin plating solderable per MIL-STD-750
method 2026
Thermal Resistance: 22ºC/W junction to lead at 3/8 inch
(10 mm) from body, or 82ºC/W junction to ambient when
mounted on FR4 PC board with 4 mm2 copper pads (1oz)
and track width 1 mm, length 25 mm
• POLARITY: Cathode indicated by band
• MARKING: Part number and polarity diode symbol
• WEIGHT: 1.5 grams. (Approx)
•
•
Steady-State Power dissipation*: 5 watts at TL < 40oC, or
1.52 watts at TA = 25ºC when mounted on FR4 PC board
described for thermal resistance
Solder Temperatures: 260 o C for 10 s (maximum)
• TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
• See “CASE 1” package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
Copyright © 2006
Microsemi
Page 1
3-31-2006 REVB
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
VOLTS
7.1
11.3
13.7
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
VOLTS
7.5
11.5
14.1
MAXIMUM
REVERSE
LEAKAGE
@VWM
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
VOLTS
6.0
STAND-OFF
VOLTAGE
(NOTE 1)
VWM
MAXIMUM
PEAK PULSE
CURRENT
ID
μA
300
25
2
MICROSEMI
IPP3
A
160
100
90
70
60
50
40
PART NUMBER
VOLTS
1N6373
MPTE-5
5.0
1N6374
1N6375
1N6376
1N6377
1N6378
1N6379
1N6380
1N6381
MPTE-8
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
9.4
11.7
MPTE-10
MPTE-12
MPTE-15
MPTE-18
MPTE-22
MPTE-36
MPTE-45
2
2
2
2
2
2
14.1
17.6
21.2
25.9
42.4
52.9
16.1
20.1
24.2
29.8
50.6
63.3
16.5
20.6
25.2
32.0
54.3
70.0
23
19
VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)
MPTE-5C
MPTE-8C
MPTE-10C
MPTE-12C
MPTE-15C
MPTE-18C
MPTE-22C
MPTE-36C
MPTE-45C
5.0
300
25
2
2
2
2
2
2
2
6.0
7.1
7.5
160
100
90
70
60
50
40
23
19
1N6382
1N6383
1N6384
1N6385
1N6386
1N6387
1N6388
1N6389
8.0
9.4
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
11.7
14.1
17.6
21.2
25.9
42.4
52.9
C Suffix indicates Bidirectional
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
Copyright © 2006
3-31-2006 REVB
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
Pulse time duration (tp) is
defined as that point where
Peak Value
IPP
IP decays to 50% of peak
value (IPP).
time (t) in milliseconds
FIGURE 4
FIGURE 3
Pulse wave form for exponential surge
Typical Capacitance vs. Breakdown Voltage
(Unidirectional Types)
PACKAGE DIMENSIONS
FIGURE 5
Typical Capacitance vs. Breakdown Voltage
(Bidirectional Types)
CASE 1
Copyright © 2006
3-31-2006 REVB
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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