MSPSAC8.0 [MICROSEMI]

Trans Voltage Suppressor Diode, 500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2;


型号：	MSPSAC8.0
厂家：	Microsemi
描述：	Trans Voltage Suppressor Diode, 500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2
文件：	总4页 (文件大小：212K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SAC5.0 thru SAC50, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SAC5.0 thru SAC50 transient voltage suppressor (TVS) series rated at

500 watts provides an added rectifier element as shown in Figure 4 to

achieve low capacitance in applications for higher speed data or signal

lines. The low capacitance rating of 30 pF may be used for protecting

higher frequency applications in inductive switching environments or

electrical systems involving secondary lightning effects per IEC61000-4-5

DO-41

as well as RTCA/DO-160D or ARINC 429 for airborne avionics.

bidirectional protection is needed, two SAC devices in anti-parallel

configuration are required as shown in Figure 6. With their very fast

response time, they also provide ESD and EFT protection per IEC61000-4-

2 and IEC61000-4-4 respectively.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS series for

flexible thru-hole mounting (for bidirectional see

Figure 6)

•

Suppresses transient up to 500 Watts Peak Pulse

Power @ 10/1000 µs

•

Low Capacitance for data-line protection to 10 MHz

•

Improved performance in low capacitance of 30 pF

Protection for aircraft fast data rate lines up to Level 3

Waveform 4 and Level 1 Waveform 5A in RTCA/DO-

160D (also see MicroNote 130) & ARINC 429 with bit

rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)

Economical plastic series in flexible axial-leaded

DO-41 package

•

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC

(10X) as well as surge (3X) and 24 hours HTRB

with post test V_Z& I_R

•

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: SAC5.0 to SAC50

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

also available by adding MQ, MX, MV, or MSP

prefixes respectively to part number, e.g.

MXSAC5.0, MVSAC18, etc.

Class 2: SAC5.0 to SAC45

Class 3: SAC5.0 to SAC22

Class 4: SAC5.0 to SAC10

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance

Class 1: SAC5.0 to SAC26

•

Also available in surface mount with HSMBJ prefix

for part numbers (ex. HSMBJSAC5.0)

RoHS Compliant devices available by adding “e3”

suffix

Class 2: SAC5.0 to SAC15

Class 3: SAC5.0 to SAC7.0

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

CASE: Void Free Transfer Molded Thermosetting Plastic

epoxy meeting UL94V-0

•

Peak Pulse Power Dissipation at 25^oC: 500 Watts @

•

10/1000 μs with repetition rate of 0.01% or less*

Steady State Power Dissipation* at T_L= +75^oC: 2.5 Watts

(Lead Length = 3/8”).

TERMINATIONS: Tin-lead or RoHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-750

method 2026

Clamping Speed (0 volts to V_(BR)Min.) less than 5

nanoseconds.

Operating and Storage Temperature: -65^oC to +150^oC.

•

POLARITY: Cathode indicated by band

MARKING: Part number and cathode band

WEIGHT: 0.7 Grams (Approx.)

See package dimensions on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients that briefly

drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak

pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

9-12-2005 REV D

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

SAC5.0 thru SAC50, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

ELECTRICAL CHARACTERISTICS @ 25^oC

MICROSEMI

PART

REVERSE

STAND-OFF

VOLTAGE

(Note 1)

BREAKDOWN

VOLTAGE

MAXIMUM MAXIMUM

MAXIMUM

WORKING

INVERSE

BLOCKING

VOLTAGE

INVERSE

BLOCKING

LEAKAGE

CURRENT

PEAK

STANDBY CLAMPING PEAK PULSE CAPACITANCE

INVERSE

BLOCKING

VOLTAGE

NUMBER

CURRENT VOLTAGE

CURRENT

RATING

(Note 2)

@ I

(BR)

1.0mA

(BR)

V_C

@ I = 5.0A

(BR)

@ O Volts

Volts

WIB

@ V

PIB

Volts

WIB

Volts

Min.

Volts

Amps

Volts

μA

µA

SAC5.0

SAC6.0

SAC7.0

SAC8.0

SAC8.5

SAC10

SAC12

SAC15

SAC18

SAC22

SAC26

SAC36

SAC45

SAC50

5.0

6.0

7.0

8.0

8.5

7.60

7.90

8.33

8.89

300

100

5.0

10.0

11.2

12.6

13.4

14.0

16.3

19.0

23.6

28.8

35.4

42.3

60.0

77.0

88.0

150

100

200

9.44

11.10

13.30

16.70

20.00

24.40

28.90

40.0

11.1

8.6

6.8

5.8

50.00

55.50

Note 1: A transient voltage suppressor is normally selected according to voltage (V_WM), which should be equal to or greater than the dc or continuous peak

operating voltage level.

Note 2: Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.

GRAPHS

t_w– Pulse Width μs

FIGURE 1

9-12-2005 REV D

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

SAC5.0 thru SAC50, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

Peak Power

(Single Pulse)

Average

Power

Lead Length = 3/8”

T_L– Lead Temperature – ^oC

t – Time – msec

FIGURE 2

FIGURE 3

SCHEMATIC APPLICATIONS

The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low

capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random

high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a

low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating

than the TVS clamping voltage V_C. The Microsemi recommended rectifier part number is the “LCR60” for the application in Figure 5. If using two

(2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the

reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the

capacitance of Figure 4.

FIGURE 4

FIGURE 5

FIGURE 6

TVS with internal Low

Capacitance Diode

Optional Unidirectional

configuration (TVS and

separate rectifier diode)

in parallel)

Optional Bidirectional

configuration (two TVS

devices in anti-parallel)

9-12-2005 REV D

Microsemi

Page 3

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

SAC5.0 thru SAC50, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

PACKAGE DIMENSIONS

9-12-2005 REV D

Microsemi

Scottsdale Division

Page 4

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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