MSPSMBJLCR80 [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2;型号: | MSPSMBJLCR80 |
厂家: | Microsemi |
描述: | Trans Voltage Suppressor Diode, 1500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2 |
文件: | 总2页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMBGLCR80, e3 and SMBJLCR80, e3
LOW CAPACITANCE RECTIFIER
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The SMBGLCR80 and SMBJLCR80 low capacitance rectifiers are used in parallel with a
low-capacitance transient voltage suppressor (TVS) such as the SMCGLCE5.0-
170A or SMCJLCE5.0-170A series for unidirectional applications as shown in
Figure 4. It is rated with 100 Amp forward surges to compliment this 1500 Watt
TVS series and also provide a low capacitance and a low forward (VF) voltage
with fast response time. The low capacitance rating of 100 pF when used in
parallel to the SMCGLCExxx or SMCJLCExxx series will result in a total
capacitance of 200 pF or less at zero volts for protecting higher frequency
applications from inductive switching threats or electrical systems involving
secondary lightning effects per IEC61000-4-5 as well as RTCA/DO-160D or
ARINC 429 for airborne avionics. With their fast response time, they also provide
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
Suppresses transient in forward direction up to 1500
Watts Peak Pulse Power @ 10/1000 µs
•
Low-capacitance Rectifier to compliment the low
capacitance TVS series for unidirectional
applications
Economical small plastic surface mount with robust
axial subassembly package
•
•
•
Improved protection of low capacitance TVS
Optional 100% screening for avionics grade is
available by adding MA prefix to part number for added
100% temperature cycle -55oC to +125oC (10X) as well
as surge (3X) & 24 hours HTRB with post test VZ & IR
Low Capacitance for data-line protection to 1 MHz
Protection for aircraft fast data rate lines per
select level waveforms in RTCA/DO-160D &
ARINC 429 with bit rates of 100 kb/s (per ARINC
429, Part 1, par. 2.4.1.1)
•
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, or MSP prefixes
respectively to part number, e.g. MXSMCGLCR80,
MVSMCJLCR80, etc.
•
•
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5
with 12 and 42 Ohms source impedance in the
forward direction for Class 1, 2, 3, and 4
•
•
Also available in axial-leaded package with part
number LCR80 or ELCR80 (see separate data sheet)
RoHS Compliant devices available by adding “e3” suffix
•
Secondary lightning protection per IEC61000-4-5
with 2 Ohms source impedance in the forward
direction for Class 2 and 3
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
CASE: Void-Free Transfer Molded Thermosetting
Plastic epoxy body meeting UL94V-0
•
Forward Peak Pulse Current at 25oC: 100 Amps @ 10/1000μs
•
•
with repetition rate of 0.01% or less*
Steady State Power Dissipation* at TL = +75oC: 2.5 Watts
FINISH: All External Surfaces Are Corrosion Resistant
and Leads Solderable
•
•
Clamping Speed (0 volts to V(BR) Min.) less than 5
nanoseconds
Operating and Storage Temperature: -65oC to +150oC
•
•
POLARITY: Cathode Marked with Band
MARKING: Part number without SMBG or SMBJ prefix,
e.g. LCR80 or LCR80e3
•
•
WEIGHT: 0.1 Grams (Approx.)
ELECTRICAL CHARACTERISTICS @ 25oC
WORKING
PEAK
MINIMUM
REVERSE
REVERSE
CURRENT
@VRWM
MAXIMUM
FORWARD
VOLTAGE
@ IPP
MAXIMUM
PEAK PULSE CAPACITANCE
CURRENT*
RATING
IPP
MAXIMUM
MICROSEMI PART
NUMBER
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
@ 0 Volts
V(BR) @ I(BR) 1.0mA
IR
VF
Volts
200
Volts
220
Volts
7.0
Amps
100
pF
100
μA
10
SMBG(J)LCR80
SMBG(J)LCR80e3
*See Figure 3
Copyright © 2007
3-14-2007 REV B
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SMBGLCR80, e3 and SMBJLCR80, e3
LOW CAPACITANCE RECTIFIER
S C O T T S D A L E D I V I S I O N
GRAPHS
Peak Power
(Single Pulse)
Average
Power
TL – Lead Temperature – oC
t – Time – ms
FIGURE 2
FIGURE 3
SCHEMATIC APPLICATIONS
A typical low capacitance TVS device configuration is shown in Figure 4 when used with a separate rectifier to maintain low capacitance. As
shown, an additional low capacitance rectifier diode is used in parallel in the same polarity direction as the TVS. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode within the TVS and
also provide a low voltage conducting direction. This added rectifier diode such as the SMBGLCR80 or SMBJLCR80 is of similar low
capacitance as the TVS and also has a higher reverse voltage rating than the TVS clamping voltage VC. The unidirectional configuration in Figure
4 will result in twice the capacitance of the SMCG(J)LCExxx series of low capacitance TVSs that are rated at 100 pF maximum. This results in a
total of 200 pF maximum in this parallel configuration since the SMBG(J)LCR80 is also the same capacitance value of 100 pF.
SMBG(J)LCR80
Low Capacitance
Rectifier
SMCG(J)LCExxx
(low capacitance TVS)
FIGURE 4
Unidirectional configuration of
Low Capacitance TVS such as
the SMCG(J)LCExxx series and a
separate SMBG(J)LCR80 in parallel)
PACKAGE DIMENSIONS: SMBJ(DO-214AA) & SMBG(DO-215AA)
A
B
C
D
E
F
K
L
MIN
MAX
.077 .160
.083 .180
.130 .205
.155 .220
.077
.104
.235
.255
.015
.030
.030
.060
DIMENSIONS IN MILLIMETERS
MIN
MAX
1.96 4.06
2.10 4.57
3.30 5.21
3.94 5.59
1.95
2.65
5.97
6.48
.381
.762
.760
1.520
Copyright © 2007
3-14-2007 REV B
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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