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MV2N3821UB [MICROSEMI]

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, CERAMIC PACKAGE-3;

MV2N3821UB


元器件型号：	MV2N3821UB
生产厂家：	MICROSEMI CORPORATION
描述和应用：	RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, CERAMIC PACKAGE-3 CD 晶体管
PDF文件：	总4页 (文件大小：225K)
下载文档：	下载PDF数据表文档文件
型号参数：MV2N3821UB参数

MV2N3822

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN

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0 MICROSEMI

MV2N3823

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN

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0 MICROSEMI

MV2N3823UB

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, CERAMIC PACKAGE-3

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0 MICROSEMI

MV2N4091

Small Signal Field-Effect Transistor, TO-18, TO-18, 3 PIN

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0 MICROSEMI

MV2N4092

Small Signal Field-Effect Transistor, TO-18, TO-18, 3 PIN

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0 MICROSEMI

MV2N4416A

Small Signal Field-Effect Transistor, 0.015A I(D), 35V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AF, TO-72, 3 PIN

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0 MICROSEMI

MV2N4857

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN

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0 MICROSEMI

MV2N5114

Power Field-Effect Transistor, TO-18, TO-18, 3 PIN

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0 MICROSEMI

MV2N5116

Power Field-Effect Transistor, TO-18, TO-18, 3 PIN

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0 MICROSEMI

MV3

5x7 mm, 3.3 or 5.0 Volt, HCMOS, VCXO

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30 MTRONPTI

MV30001

GaAs Varactor Diodes Hyperabrupt

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11 MICROSEMI

MV30002

GaAs Varactor Diodes Hyperabrupt

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11 MICROSEMI

MV30003

GaAs Varactor Diodes Hyperabrupt

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8 MICROSEMI

MV30004

GaAs Varactor Diodes Hyperabrupt

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11 MICROSEMI

MV30005

GaAs Varactor Diodes Hyperabrupt

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13 MICROSEMI

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