MWS11-GB11T [MICROSEMI]
Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, PLASTIC, SOT-23, 5 PIN;
| 型号： | MWS11-GB11T |
| 厂家： | 
Microsemi |
| 描述： | Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, PLASTIC, SOT-23, 5 PIN 射频 微波 |
| 文件： | 总5页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C O N F I D E N T I A L
MWS11-GB11
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
PREVIEW
This general purpose amplifier is a low
This RFIC amplifier is initially
Advanced InGaP HBT
cost, broadband RFIC manufactured with available in a high performance ceramic
an InGaP/GaAs Heterojunction Bipolar micro-X package to handle P1dB output
Transistor (HBT) process (MOCVD). power up to 19dBm (5V) and lower
This RFIC amplifier was designed as an powers in an industry-standard SOT-23 5-
easily cascadable 50 ohm gain block. The lead surface mount package. The same
device is self-contained with 50 ohm input RFIC will be available later in an
and output impedance. Applications in- advanced Microsemi Gigamite™ package
clude IF and RF amplification in wireless/ with ceramic Micro-X performance but
wired voice and data communication with the cost similar to the SOT-23 plastic
products and broadband test equipment package.
DC to 6GHz
Single +5V Supply
Small Signal Gain = 16dB
P1dB = 19dBm (5V),
f=1GHz
SOT-23 5-Pin, Micro-X, &
Gigamite Packages
Mcrosemi
.
Broadband Gain Blocks
IF or RF buffer Amplifiers
Driver Stage for Power
Amps
Final Power Amp for Low to
Medium Power Applications
Broadband Test Equipment
operating up to 6 GHz.
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
4 5
4 0
3 5
3 0
2 5
2 0
1 5
1 0
5
f = 5 . 7 G H z
V c c = 5 V
N o m in a l C u r re n t
2 0 m A
0
-5
-1 0
-2 0
-1 5
-1 0
-5
0
5
1 0
1 5
P o u t
P in (d B m )
G a in
C u rre n t
SE SOT-23 5-Pin
Plastic
Ceramic Micro-X
4-PIN
Gigamite
TJ (°C)
0 to 70
MWS11-GB11
MWS11-GB11
MWS11-GB11-X1
Note: Available in Tape & Reel.
Append the letter “T” to the part number. (i.e. MSW11-GB11-X1T)
Copyright 2000
Rev. 0.1b,2000-08-30
Microsemi
Page 1
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
C O N F I D E N T I A L
MWS11-GB11
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
PREVIEW
Mcrosemi
DC Supply Voltage ................................................................................................. 5.0 Vdc
Absolute Max. Limit ..................................................................................................60mA
RF Input Power (Pin) .............................................................................................. 10 dBm
Operating Case Temperature..........................................................................-40º to +85ºC
Storage Temperature ....................................................................................-60º to +150ºC
GND
4
.
RF
RF
1
3
IN
OUT
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
2
GND
Ceram ic Micro-
X Package
PW
PACKAGE
xx C/W
°
THERMAL RESISTANCE-JUNCTION TO AMBIENT,
θJA
149 C/W
°
THERMAL RESISTANCE-JUNCTION TO CASE,
THERMAL RESISTANCE-JUNCTION TO LEAD,
θJC
θJT
xx C/W
°
Junction Temperature Calculation: TJ = TA + (PD x θJA).
The θJA numbers are guidelines for the thermal performance of the device/pc-board
system. All of the above assume no ambient airflow.
RF IN
GND
RF Input pin. A DC blocking capacitor should be used in most applications.
Ground connection. Traces should be minimized and connect immediately to ground.
RF output and bias pin. In the bias network, a resistor is selected to set the DC current into this pin as:
(
V
CC −V
D
)
R =
RF OUT /
BIAS
I
CC
Note that maximum current limit ICC must not be exceeded and a resistor should always be used. A DC blocking
capacitor should also be used.
Copyright 2000
Rev. 0.1b,2000-08-30
Microsemi
Page 2
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
C O N F I D E N T I A L
MWS11-GB11
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
PREVIEW
Unless otherwise specified, the following specifications apply over the operating ambient temperature -40°C ≤ TA ≤ +85°C except where
otherwise noted. Test conditions: [Enter Test Conditions Here]
Mcrosemi
[Part #]
Typ
Parameter
POWER SUPPLY
Symbol
Test Conditions
Units
Min
Max
ꢀ
Application Frequency Range
Linear Output Power
Output 3rd Order Intermod
Product*
f
DC
16
6
19
GHz
dBm
P1dB
f=2GHz
.
IP3
34
dBm
Small-Signal Gain
Noise Figure
Supply Voltage
G
NF
VCC
f=1 GHz
f=1.5 GHz
13
3.3
16
4
5
dB
dB
V
3.5
4.6
20
Supply Current
60
mA
OVERALL
ꢀ
DC to
>6000
5.5
11.3
11.3
11.4
11.5
11.5
9.9
Frequency Range
1dB Bandwidth
T=25°C, VD=5.5V, ICC=70mA
MHz
GHz
dB
dB
dB
dB
dB
dB
dB
dB
Freq = 100MHz
Freq = 1000MHz
Freq = 2000MHz
Freq = 3000MHz
Freq = 4000MHz
Freq = 6000MHz
100MHz to 2000MHz
Freq = 1000MHz
In a 50
10.2
Gain
Gain Flatness
Noise Figure
0.05
7.6
<1.8:1
<2.5:1
<1.8:1
<2.5:1
34.5
18.5
16.5
Input VSWR
Output VSWR
Output IP3
Freq = 1000MHz
Freq = 1000MHz
Freq = 1000MHz
dBm
dBm
dB
Output P1dB
Reverse Isolation
THERMAL
ꢀ
Maximum Measured Junction
Temp at DC Bias Conditions
TA = +85°C
142
°C
TA = +85°C
TA = +25°C
TA = -40°C
1.4x103
3.4x105
1.8x109
Years†
Years†
Years†
Mean Time Between Failures
* Output power at 1dB gain compression point, f=1 GHz
†
In accordance with Manufacturer design
Copyright 2000
Rev. 0.1b,2000-08-30
Microsemi
Page 3
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
C O N F I D E N T I A L
MWS11-GB11
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
PREVIEW
Mcrosemi
VCC
µ
Ω
0.01 pF
.
F
20
1.0
220 nH
4
2
RF IN
RF OUT
150 pF
pF
150
1
3
VD
Ω µ
50
strip
Ω µ
50
strip
VCC
µ
F
1.0
µ
F
0.01
pF
Ω
20
100
4
2
λ
TL, /4
RF IN
RF OUT
strip
150 pF
pF
150
1
3
VD
Ω µ
50
strip
Ω µ
50
Copyright 2000
Rev. 0.1b,2000-08-30
Microsemi
Page 4
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
C O N F I D E N T I A L
MWS11-GB11
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
PREVIEW
4-PIN CERAMIC MICRO-X
Mcrosemi
A
. 8 8 9
4 . 6 9 9
2 . 1 5 9
. 3 8 0
1 . 4 2 9
5 . 4 6 0
2 . 9 2 1
. 6 3 5
. 0 3 5
. 1 8 5
. 0 8 5
. 0 1 5
. 0 1 3
. 0 6 7
. 0 0 3
. 0 4 5
. 2 1 5
. 1 1 5
. 0 2 5
. 0 1 7
. 0 7 3
. 0 0 7
. 0 5 7
. 0 1 0
. 0 2 5
. 0 3 8
4 5 °
E
4
.
B
F
3
1
. 3 3 0
. 4 3 1
1 . 7 0 1
. 0 7 6
1 . 8 5 4
. 1 7 7
D
2
G
H
1 . 4 4 7
. 2 5 4
C
. 1 5 2
. 5 5 8
. 8 1 2
. 0 0 6
. 0 2 2
. 0 3 2
. 6 3 5
. 9 6 5
4 5 °
I
Note:
1. Dimensions do not include mold flash or protrusions; these
shall not exceed 0.15mm (.0006”) on any side. Lead
dimension shall not include solder coverage.
J
L
K
Copyright 2000
Rev. 0.1b,2000-08-30
Microsemi
Page 5
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
相关型号：
MWS11GB11-S89T
Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, PLASTIC, SOT-89, 3 PIN
MICROSEMI
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