MX1N4765 [MICROSEMI]
Zener Diode, 9.1V V(Z), 5%, 0.25W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN;
| 型号： | MX1N4765 |
| 厂家： | 
Microsemi |
| 描述： | Zener Diode, 9.1V V(Z), 5%, 0.25W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件： | 总2页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a
selection of 9.1 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
JEDEC registered 1N935 thru 1N940 series
Standard reference voltage of 9.1V +/- 5%
Internal metallurgical bonds
•
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
•
•
Temperature coefficient selections available
JANS Equivalent available via SCD
from 0.01%/ºC to 0.0005%/ºC
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers. For
example, designate “MX1N4769A” for a JANTX
screen
Radiation Hardened devices available by
changing “1N” prefix to “RH”, e.g. RH4769A, RH
4774A, etc. Also consult factory for “RH” data
sheet brochure for other radiation hardened
reference diode products.
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%,
1N4774A-1%, 1N4769-3%, 1N4769A-1%, etc.
•
•
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
•
1020
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & StorageTemperature: -65oC to
•
•
CASE: Hermetically sealed glass case with
+175oC
DO-7 (DO-204AA) package
DC Power Dissipation: 250 mW @ TL = 25oC
NOTE: For optimum voltage-temperature
stability, the test current IZT = 0.5 or 1.0 mA as
shown in Electrical Characteristics (less than 10
mW in dissipated power)
TERMINALS: Tin-lead plated and solderable
per MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated
with the banded end positive with respect to the
opposite end
•
•
•
Solder temperatures: 260 oC for 10 s (maximum)
•
TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
•
•
WEIGHT: 0.2 grams.
See package dimensions on last page
Copyright 2003
Microsemi
Page 1
8-19-2003 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
*ELECTRICAL CHARACTERISTICS @ 25oC
MAXIMUM
JEDEC
TYPE
ZENER
VOLTAGE
(Note 3)
ZENER
TEST
MAXIMUM
DYNAMIC
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
VOLTAGE
TEMPERATURE
STABILITY
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
NUMBER
CURRENT
IMPEDANCE
(Note 2 & 3)
α
VZ
VZ @ IZT
VOLTS
9.1
IZT
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
ZZT
OHMS
350
350
350
350
350
350
350
350
350
350
200
200
200
200
200
200
200
200
200
200
IR
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
∆VZT
mV
68
141
34
70
14
28
7
oC
%/oC
0.01
1N4765
0 to + 75
1N4765A
1N4766
9.1
-55 to +100
0 to + 75
0.01
9.1
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
1N4766A
1N4767
9.1
-55 to +100
0 to + 75
9.1
1N4767A
1N4768
9.1
-55 to +100
0 to + 75
9.1
1N4768A
1N4769
9.1
14
3
-55 to +100
0 to + 75
9.1
1N4769A
1N4770
9.1
7
-55 to +100
0 to + 75
9.1
68
141
34
70
14
28
7
1N4770A
1N4771
9.1
-55 to +100
0 to + 75
0.01
9.1
0.005
0.005
0.002
0.002
0.001
0.001
0.005
0.005
1N4771A
1N4772
9.1
-55 to +100
0 to + 75
9.1
1N4772A
1N4773
9.1
-55 to +100
0 to + 75
9.1
1N4773A
1N4774
9.1
14
3
-55 to +100
0 to + 75
9.1
1N4774A
9.1
7
-55 to +100
*JEDEC Registered Data.
NOTES:
1. Measured by superimposing IZ ac rms on IZ dc @ +25oC where IZ ac rms = 10% IZ dc.
2. Maximum allowable change between any two discrete temperatures over the specified temperature range.
3. Voltage measurements to be performed 15 seconds after application of dc current.
4. Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH4774A.
5. Consult factory for TX, TXV or JANS equivalent SCDs.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm
Copyright 2003
8-19-2003 REV A
Microsemi
Scottsdale Division
Page 2
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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