MX5774A [MICROSEMI]
Rectifier Diode, 1 Element, Silicon, CERAMIC, FLAT PACK-14;
| 型号： | MX5774A |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, Silicon, CERAMIC, FLAT PACK-14 CD 二极管 |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5774A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive
side of the power supply line and to ground (see figure 1). An external TVS diode may
be added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
14-PIN Ceramic
Flat Pack
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
•
•
•
•
•
•
Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX5774A for a JANTX screen.
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
500 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +150oC
•
•
•
14-PIN Ceramic Flat Pack
Weight 0.29 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
•
Carrier Tubes; 19 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max.; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.0 mW/oC above +25oC
MAXIMUM
REVERSE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
RECOVERY TIME
FORWARD
trr
RECOVERY TIME
I = IR = 200 mA
i = 20 mA
rr
F
V
F1
Ct
t
fr
I = 100 mA
I
VR = 0 V
F = 1 MHz
F
R1
I = 500 mA
F
R = 100 ohms
(Note 1)
VR = 40 V
L
PART
NUMBER
Vdc
μAdc
pF
ns
ns
5774A
1
0.1
8.0
40
20
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2007
3-27-2007
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
5774A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VBR
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VF
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
Ct
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+VCC)
Symbol
Inches
Max
Millimeters
Min
Min
Max
9.91
6.60
2.41
9.40
BL
BW
CH
LL
.390
.260
.095
.370
.235
.045
.250
.005
.026
5.97
1.14
6.35
0.13
0.66
I/O Port
LO
LO
.045
1.14
2
LS
LT
LU
LW
.050 BSC
1.27 BSC
GND (or -VCC)
.003
.006
.280
.019
0.08
0.15
7.11
0.48
Steering Diode Application
.010
0.25
FIGURE 1
Copyright © 2007
3-27-2007
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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